Inventor · disambiguated record
Felix Fujishiro
Also filed as: FUJISHIRO FELIX · FUJISHIRO FELIX H
10 granted patents·265 citations·filing 1992–1999
91Inventor score
Top patents by PatentIndex Score
10 records- 0179US5745990ATitanium boride and titanium silicide contact barrier formation for integrated circuitsVLSI TECHNOLOGY INC·Filed 1995·Granted May 5, 1998·48 cites·6 claims
- 0275US5294571ARapid thermal oxidation of silicon in an ozone ambientVLSI TECHNOLOGY INC·Filed 1992·Granted Mar 15, 1994·60 cites·17 claims
- 0371US5610105ADensification in an intermetal dielectric filmVLSI TECHNOLOGY INC·Filed 1994·Granted Mar 11, 1997·49 cites·18 claims
- 0467US5434104AMethod of using corrosion prohibiters in aluminum alloy filmsVLSI TECHNOLOGY INC·Filed 1994·Granted Jul 18, 1995·26 cites·10 claims
- 0560US5286518AIntegrated-circuit processing with progressive intermetal-dielectric depositionVLSI TECHNOLOGY INC·Filed 1992·Granted Feb 15, 1994·30 cites·10 claims
- 0658US6429144B1Integrated circuit manufacture method with aqueous hydrogen fluoride and nitric acid oxide etchKONINKL PHILIPS ELECTRONICS NV·Filed 1999·Granted Aug 6, 2002·17 cites·13 claims
- 0742US6007641AIntegrated-circuit manufacture method with aqueous hydrogen-fluoride and nitric-acid oxide etchVLSI TECHNOLOGY INC·Filed 1997·Granted Dec 28, 1999·9 cites·7 claims
- 0841US5493132AIntegrated circuit contact barrier formation with ion implantVLSI TECHNOLOGY INC·Filed 1995·Granted Feb 20, 1996·10 cites·6 claims
- 0937US5329161AMolybdenum boride barrier layers between aluminum and silicon at contact points in semiconductor devicesVLSI TECHNOLOGY INC·Filed 1992·Granted Jul 12, 1994·9 cites·8 claims
- 1033US5493926AMethod of identifying a weakest interface where delamination is most likely to occur in a multi-layer dielectric film stackVLSI TECHNOLOGY INC·Filed 1995·Granted Feb 27, 1996·7 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →