Inventor · disambiguated record
Christopher John Kawamura
Also filed as: KAWAMURA CHRISTOPHER J · KAWAMURA CHRISTOPHER JOHN · Kawamura Christopher
94 granted patents·3 pending applications·605 citations·filing 2016–2024
99Inventor score
Files withMICRON TECHNOLOGY INC97
Top patents by PatentIndex Score
97 records- 0199US11107515B2Ferroelectric memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 31, 2021·6 cites·24 claims
- 0299US10354712B2Ferroelectric memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 16, 2019·70 cites·18 claims
- 0398US11074964B1Integrated assemblies comprising digit lines configured to have shunted ends during a precharge operationMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 27, 2021·10 cites·28 claims
- 0498US10153018B2Ferroelectric memory cellsMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 11, 2018·32 cites·35 claims
- 0598US9858979B1Reprogrammable non-volatile ferroelectric latch for use with a memory controllerMICRON TECHNOLOGY INC·Filed 2016·Granted Jan 2, 2018·97 cites·20 claims
- 0698US9786348B1Dynamic adjustment of memory cell digit line capacitanceMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 10, 2017·55 cites·19 claims
- 0797US11211113B1Integrated assemblies comprising wordlines having ends selectively shunted to low voltage for speed transitioningMICRON TECHNOLOGY INC·Filed 2020·Granted Dec 28, 2021·6 cites·26 claims
- 0897US10163480B1Periphery fill and localized capacitanceMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 25, 2018·26 cites·17 claims
- 0997US10074414B2Apparatuses and methods including ferroelectric memory and for operating ferroelectric memoryMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 11, 2018·23 cites·27 claims
- 1097US9721638B1Boosting a digit line voltage for a write operationMICRON TECHNOLOGY INC·Filed 2016·Granted Aug 1, 2017·20 cites·25 claims
- 1197US9715918B1Power reduction for a sensing operation of a memory cellMICRON TECHNOLOGY INC·Filed 2016·Granted Jul 25, 2017·44 cites·26 claims
- 1296US11706909B2Integrated assemblies comprising memory cells and shielding material between the memory cellsMICRON TECHNOLOGY INC·Filed 2020·Granted Jul 18, 2023·3 cites·24 claims
- 1396US10872650B2Ferroelectric memory cellsMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 22, 2020·8 cites·18 claims
- 1496US10127965B2Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memoryMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 13, 2018·15 cites·26 claims
- 1595US10127972B2Apparatuses and methods including two transistor-one capacitor memory and for accessing sameMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 13, 2018·16 cites·8 claims
- 1695US10074415B2Boosting a digit line voltage for a write operationMICRON TECHNOLOGY INC·Filed 2017·Granted Sep 11, 2018·13 cites·20 claims
- 1795US9786347B1Cell-specific reference generation and sensingMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 10, 2017·14 cites·19 claims
- 1895US9734886B1Cell-based reference voltage generationMICRON TECHNOLOGY INC·Filed 2016·Granted Aug 15, 2017·17 cites·14 claims
- 1994US10854276B2Apparatuses and methods including two transistor-one capacitor memory and for accessing sameMICRON TECHNOLOGY INC·Filed 2018·Granted Dec 1, 2020·7 cites·20 claims
- 2094US10418083B2Apparatuses and methods including ferroelectric memory and for operating ferroelectric memoryMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 17, 2019·9 cites·16 claims
- 2192US10431283B2Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memoryMICRON TECHNOLOGY INC·Filed 2018·Granted Oct 1, 2019·9 cites·15 claims
- 2291US11967362B2Pre-sense gut node amplification in sense amplifierMICRON TECHNOLOGY INC·Filed 2022·Granted Apr 23, 2024·2 cites·21 claims
- 2391US11205468B2Apparatuses and methods including ferroelectric memory and for operating ferroelectric memoryMICRON TECHNOLOGY INC·Filed 2020·Granted Dec 21, 2021·2 cites·21 claims
- 2491US11120847B2Apparatuses and method for reducing row address to column address delay for a voltage threshold compensation sense amplifierMICRON TECHNOLOGY INC·Filed 2020·Granted Sep 14, 2021·3 cites·19 claims
- 2591US10535397B1Sensing techniques for multi-level cellsMICRON TECHNOLOGY INC·Filed 2018·Granted Jan 14, 2020·11 cites·18 claims
- 2691US9899073B2Multi-level storage in ferroelectric memoryMICRON TECHNOLOGY INC·Filed 2016·Granted Feb 20, 2018·8 cites·21 claims
- 2790US10861787B1Memory device with bitline noise suppressing schemeMICRON TECHNOLOGY INC·Filed 2019·Granted Dec 8, 2020·6 cites·24 claims
- 2890US9792973B2Ferroelectric memory cell sensingMICRON TECHNOLOGY INC·Filed 2016·Granted Oct 17, 2017·8 cites·25 claims
- 2989US9990977B2Power reduction for a sensing operation of a memory cellMICRON TECHNOLOGY INC·Filed 2017·Granted Jun 5, 2018·6 cites·20 claims
- 3087US11574668B2Apparatuses and methods including ferroelectric memory and for operating ferroelectric memoryMICRON TECHNOLOGY INC·Filed 2021·Granted Feb 7, 2023·1 cites·20 claims
- 3187US11443780B2Vertical access line multiplexorMICRON TECHNOLOGY INC·Filed 2021·Granted Sep 13, 2022·2 cites·17 claims
- 3287US10885964B2Apparatuses and methods including ferroelectric memory and for operating ferroelectric memoryMICRON TECHNOLOGY INC·Filed 2019·Granted Jan 5, 2021·4 cites·19 claims
- 3386US10566043B2Multi-level storage in ferroelectric memoryMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 18, 2020·4 cites·20 claims
- 3485US10566036B2Apparatuses and method for reducing sense amplifier leakage current during active power-downMICRON TECHNOLOGY INC·Filed 2018·Granted Feb 18, 2020·5 cites·20 claims
- 3582US11127450B2Pre-writing memory cells of an arrayMICRON TECHNOLOGY INC·Filed 2020·Granted Sep 21, 2021·1 cites·20 claims
- 3681US9847117B1Dynamic reference voltage determinationMICRON TECHNOLOGY INC·Filed 2016·Granted Dec 19, 2017·4 cites·22 claims
- 3780US11176987B2Dram array architecture with row hammer stress mitigationMICRON TECHNOLOGY INC·Filed 2020·Granted Nov 16, 2021·1 cites·20 claims
- 3880US10978138B2Main word line driver circuitMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 13, 2021·1 cites·20 claims
- 3979US10910379B2Integrated assemblies comprising memory cells and shielding material between the memory cells, and methods of forming integrated assembliesMICRON TECHNOLOGY INC·Filed 2019·Granted Feb 2, 2021·2 cites·11 claims
- 4079US10236036B2Sense amplifier signal boostMICRON TECHNOLOGY INC·Filed 2017·Granted Mar 19, 2019·4 cites·13 claims
- 4178US10839871B2Apparatuses and method for reducing sense amplifier leakage current during active power-downMICRON TECHNOLOGY INC·Filed 2020·Granted Nov 17, 2020·1 cites·20 claims
- 4276US10998031B2Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memoryMICRON TECHNOLOGY INC·Filed 2019·Granted May 4, 2021·2 cites·21 claims
- 4376US10366735B2Boosting a digit line voltage for a write operationMICRON TECHNOLOGY INC·Filed 2018·Granted Jul 30, 2019·2 cites·20 claims
- 4475US10529402B2Ferroelectric memory cell sensingMICRON TECHNOLOGY INC·Filed 2018·Granted Jan 7, 2020·2 cites·20 claims
- 4575US10236049B2Power reduction for a sensing operation of a memory cellMICRON TECHNOLOGY INC·Filed 2018·Granted Mar 19, 2019·2 cites·20 claims
- 4675US10153024B2Dynamic adjustment of memory cell digit line capacitanceMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 11, 2018·2 cites·20 claims
- 4774US12158826B2Storing memory array operational information in non-volatile subarraysMICRON TECHNOLOGY INC·Filed 2022·Granted Dec 3, 2024·0 cites·20 claims
- 4874US9934839B2Dynamic adjustment of memory cell digit line capacitanceMICRON TECHNOLOGY INC·Filed 2017·Granted Apr 3, 2018·2 cites·20 claims
- 4973US10896717B2Pseudo-non-volatile memory cellsMICRON TECHNOLOGY INC·Filed 2018·Granted Jan 19, 2021·1 cites·29 claims
- 5073US10510394B2Reprogrammable non-volatile ferroelectric latch for use with a memory controllerMICRON TECHNOLOGY INC·Filed 2017·Granted Dec 17, 2019·2 cites·19 claims
Showing the top 50 of 97 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →