Inventor · disambiguated record
Daniel C. Edelstein
Also filed as: EDELSTEIN DANIEL · EDELSTEIN DANIEL C · EDELSTEIN DANIEL CHARLES
314 granted patents·55 pending applications·8,811 citations·filing 1990–2024
99Inventor score
Top patents by PatentIndex Score
369 records- 0199US9941241B2Method for wafer-wafer bondingIBM·Filed 2016·Granted Apr 10, 2018·219 cites·13 claims
- 0299US9496239B1Nitride-enriched oxide-to-oxide 3D wafer bondingIBM·Filed 2015·Granted Nov 15, 2016·243 cites·20 claims
- 0399US9324650B2Interconnect structures with fully aligned viasIBM·Filed 2014·Granted Apr 26, 2016·79 cites·7 claims
- 0499US9064874B2Interconnect with titanium—oxide diffusion barrierIBM·Filed 2014·Granted Jun 23, 2015·173 cites·5 claims
- 0599US7084079B2Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applicationsIBM·Filed 2002·Granted Aug 1, 2006·610 cites·30 claims
- 0699US6531412B2Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applicationsIBM·Filed 2001·Granted Mar 11, 2003·554 cites·9 claims
- 0799US5884990AIntegrated circuit inductorIBM·Filed 1997·Granted Mar 23, 1999·320 cites·4 claims
- 0898US9947579B2Copper interconnect structure with manganese oxide barrier layerIBM·Filed 2017·Granted Apr 17, 2018·15 cites·8 claims
- 0998US9620481B2Substrate bonding with diffusion barrier structuresGLOBALFOUNDRIES INC·Filed 2015·Granted Apr 11, 2017·220 cites·16 claims
- 1098US9601371B2Interconnect structure with barrier layerIBM·Filed 2015·Granted Mar 21, 2017·16 cites·15 claims
- 1198US8525169B1Reliable physical unclonable function for device authenticationEDELSTEIN DANIEL C·Filed 2012·Granted Sep 3, 2013·115 cites·23 claims
- 1298US6181012B1Copper interconnection structure incorporating a metal seed layerIBM·Filed 1998·Granted Jan 30, 2001·335 cites·30 claims
- 1398US6153935ADual etch stop/diffusion barrier for damascene interconnectsIBM·Filed 1999·Granted Nov 28, 2000·376 cites·22 claims
- 1498US6114937AIntegrated circuit spiral inductorIBM·Filed 1997·Granted Sep 5, 2000·258 cites·15 claims
- 1598US5793272AIntegrated circuit toroidal inductorIBM·Filed 1996·Granted Aug 11, 1998·295 cites·4 claims
- 1697US10224241B2Copper interconnect structure with manganese oxide barrier layerIBM·Filed 2017·Granted Mar 5, 2019·9 cites·20 claims
- 1797US9947581B2Method of forming a copper based interconnect structureIBM·Filed 2016·Granted Apr 17, 2018·10 cites·17 claims
- 1897US9859215B1Formation of advanced interconnectsIBM·Filed 2016·Granted Jan 2, 2018·17 cites·14 claims
- 1997US9716063B1Cobalt top layer advanced metallization for interconnectsIBM·Filed 2016·Granted Jul 25, 2017·13 cites·8 claims
- 2097US9455182B2Interconnect structure with capping layer and barrier layerIBM·Filed 2014·Granted Sep 27, 2016·18 cites·20 claims
- 2197US9190321B2Self-forming embedded diffusion barriersIBM·Filed 2013·Granted Nov 17, 2015·28 cites·7 claims
- 2297US8420531B2Enhanced diffusion barrier for interconnect structuresYANG CHIH-CHAO·Filed 2011·Granted Apr 16, 2013·29 cites·20 claims
- 2397US7276787B2Silicon chip carrier with conductive through-vias and method for fabricating sameIBM·Filed 2003·Granted Oct 2, 2007·124 cites·8 claims
- 2497US6358832B1Method of forming barrier layers for damascene interconnectsIBM·Filed 2000·Granted Mar 19, 2002·119 cites·27 claims
- 2597US6335104B1Method for preparing a conductive pad for electrical connection and conductive pad formedIBM·Filed 2000·Granted Jan 1, 2002·155 cites·45 claims
- 2697US6234870B1Serial intelligent electro-chemical-mechanical wafer processorIBM·Filed 1999·Granted May 22, 2001·192 cites·37 claims
- 2796US10325806B2Copper interconnect structure with manganese oxide barrier layerIBM·Filed 2017·Granted Jun 18, 2019·9 cites·11 claims
- 2896US9620479B13D bonded semiconductor structure with an embedded resistorIBM·Filed 2016·Granted Apr 11, 2017·14 cites·20 claims
- 2996US9064937B2Substrate bonding with diffusion barrier structuresIBM·Filed 2013·Granted Jun 23, 2015·29 cites·11 claims
- 3096US8288268B2Microelectronic structure including air gapEDELSTEIN DANIEL C·Filed 2010·Granted Oct 16, 2012·24 cites·20 claims
- 3196US7479306B2SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the sameIBM·Filed 2005·Granted Jan 20, 2009·26 cites·1 claims
- 3296US6323128B1Method for forming Co-W-P-Au filmsIBM·Filed 1999·Granted Nov 27, 2001·292 cites·20 claims
- 3395US9716088B13D bonded semiconductor structure with an embedded capacitorIBM·Filed 2016·Granted Jul 25, 2017·11 cites·10 claims
- 3495US9536780B1Method and apparatus for single chamber treatmentIBM·Filed 2016·Granted Jan 3, 2017·10 cites·1 claims
- 3595US6399496B1Copper interconnection structure incorporating a metal seed layerIBM·Filed 2000·Granted Jun 4, 2002·94 cites·21 claims
- 3695US6103096AApparatus and method for the electrochemical etching of a waferIBM·Filed 1997·Granted Aug 15, 2000·219 cites·30 claims
- 3795US5559367ADiamond-like carbon for use in VLSI and ULSI interconnect systemsIBM·Filed 1994·Granted Sep 24, 1996·178 cites·42 claims
- 3894US8759976B2Structure with sub-lithographic random conductors as a physical unclonable functionEDELSTEIN DANIEL C·Filed 2012·Granted Jun 24, 2014·18 cites·19 claims
- 3994US8530320B2High-nitrogen content metal resistor and method of forming sameYANG CHIH-CHAO·Filed 2011·Granted Sep 10, 2013·15 cites·14 claims
- 4094US8497202B1Interconnect structures and methods of manufacturing of interconnect structuresEDELSTEIN DANIEL C·Filed 2012·Granted Jul 30, 2013·14 cites·16 claims
- 4194US8138604B2Metal cap with ultra-low k dielectric material for circuit interconnect applicationsYANG CHIH-CHAO·Filed 2007·Granted Mar 20, 2012·27 cites·16 claims
- 4294US7790601B1Forming interconnects with air gapsIBM·Filed 2009·Granted Sep 7, 2010·26 cites·18 claims
- 4394US7662722B2Air gap under on-chip passive deviceIBM·Filed 2007·Granted Feb 16, 2010·31 cites·17 claims
- 4494US7517736B2Structure and method of chemically formed anchored metallic viasIBM·Filed 2006·Granted Apr 14, 2009·34 cites·7 claims
- 4594US7015581B2Low-K dielectric material system for IC applicationIBM·Filed 2005·Granted Mar 21, 2006·22 cites·9 claims
- 4694US6649531B2Process for forming a damascene structureIBM·Filed 2001·Granted Nov 18, 2003·87 cites·20 claims
- 4794US6570256B2Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substratesIBM·Filed 2001·Granted May 27, 2003·85 cites·11 claims
- 4893US10593591B2Interconnect structureTESSERA INC·Filed 2018·Granted Mar 17, 2020·4 cites·16 claims
- 4993US9786605B1Advanced through substrate via metallization in three dimensional semiconductor integrationIBM·Filed 2016·Granted Oct 10, 2017·10 cites·12 claims
- 5093US9105693B2Microelectronic structure including air gapEDELSTEIN DANIEL C·Filed 2012·Granted Aug 11, 2015·11 cites·8 claims
Showing the top 50 of 369 patent records by PatentIndex Score.
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