Inventor · disambiguated record
Yong Top Kim
Also filed as: KIM YONG TOP
4 granted patents·6 pending applications·35 citations·filing 2007–2014
74Inventor score
Top patents by PatentIndex Score
10 records- 0187US8653585B2Nonvolatile memory device including a channel pad having a channel extending portion and a spacer and method of manufacturing the sameYOUM EUN-SUN·Filed 2012·Granted Feb 18, 2014·18 cites·12 claims
- 0286US7955960B2Nonvolatile memory device and method of fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Jun 7, 2011·12 cites·22 claims
- 0366US9082655B2Method of manufacturing nonvolatile memory device including a channel padSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jul 14, 2015·2 cites·7 claims
- 0465US7981786B2Method of fabricating non-volatile memory device having charge trapping layerHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jul 19, 2011·3 cites·18 claims
- 0547US2009108334A1Charge Trap Device and Method for Fabricating the SameHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 0645US2008272424A1Nonvolatile Memory Device Having Fast Erase Speed And Improved Retention Characteristics And Method For Fabricating The SameHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 0743US2011204430A1Nonvolatile memory device and method of fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2011·Application pending·0 cites
- 0842US2009114977A1Nonvolatile memory device having charge trapping layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 0942US2009108332A1Non-volatile memory device with charge trapping layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 1040US2008093661A1Non-volatile memory device having a charge trapping layer and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →