Inventor · disambiguated record
Rajaram Bhat
Also filed as: BHAT RAJARAM
30 granted patents·6 pending applications·1,301 citations·filing 1988–2020
97Inventor score
Top patents by PatentIndex Score
36 records- 0199US5226383AGas foil rotating substrate holderBELL COMMUNICATIONS RES·Filed 1992·Granted Jul 13, 1993·564 cites·10 claims
- 0293US5796902ACoherent blue/green optical source and other structures utilizing non-linear optical waveguide with quasi-phase-matching gratingBELL COMMUNICATIONS RES·Filed 1996·Granted Aug 18, 1998·69 cites·11 claims
- 0393US4931132AOptical control of deposition of crystal monolayersBELL COMMUNICATIONS RES·Filed 1988·Granted Jun 5, 1990·157 cites·19 claims
- 0492US8379684B1Hole blocking layers in non-polar and semi-polar green light emitting devicesCORNING INC·Filed 2011·Granted Feb 19, 2013·15 cites·20 claims
- 0591US5207864ALow-temperature fusion of dissimilar semiconductorsBELL COMMUNICATIONS RES·Filed 1991·Granted May 4, 1993·133 cites·18 claims
- 0690US5381434AHigh-temperature, uncooled diode laserBELL COMMUNICATIONS RES·Filed 1993·Granted Jan 10, 1995·65 cites·15 claims
- 0783US8358673B2Strain balanced laser diodeCORNING INC·Filed 2011·Granted Jan 22, 2013·6 cites·23 claims
- 0879US5288327ADeflected flow in chemical vapor deposition cellBELL COMMUNICATIONS RES·Filed 1993·Granted Feb 22, 1994·43 cites·4 claims
- 0976US6982439B2Tunnel junctions for long-wavelength VCSELsCORNING INCOPORATED·Filed 2005·Granted Jan 3, 2006·8 cites·7 claims
- 1075US5882951AMethod for making InP-based lasers with reduced blue shiftsBELL COMMUNICATIONS RES·Filed 1997·Granted Mar 16, 1999·34 cites·6 claims
- 1174US6933539B1Tunnel junctions for long-wavelength VCSELsCORNING INC·Filed 2004·Granted Aug 23, 2005·16 cites·13 claims
- 1273US5323416APlanarized interference mirrorBELL COMMUNICATIONS RES·Filed 1993·Granted Jun 21, 1994·36 cites·9 claims
- 1372US8897329B2Group III nitride-based green-laser diodes and waveguide structures thereofSIZOV DMITRY·Filed 2010·Granted Nov 25, 2014·4 cites·24 claims
- 1472US7983317B2MQW laser structure comprising plural MQW regionsCORNING INC·Filed 2008·Granted Jul 19, 2011·3 cites·12 claims
- 1570US5771256AInP-based lasers with reduced blue shiftsBELL COMMUNICATIONS RES·Filed 1996·Granted Jun 23, 1998·28 cites·12 claims
- 1669US7615389B2GaN lasers on ALN substrates and methods of fabricationCORNING INC·Filed 2007·Granted Nov 10, 2009·4 cites·20 claims
- 1769US5541949AStrained algainas quantum-well diode lasersBELL COMMUNICATIONS RES·Filed 1995·Granted Jul 30, 1996·30 cites·20 claims
- 1868US7965752B1Native green laser semiconductor devicesCORNING INC·Filed 2009·Granted Jun 21, 2011·3 cites·23 claims
- 1966US6285044B1InP-based heterojunction bipolar transistor with reduced base-collector capacitanceTELCORDIA TECH INC·Filed 1999·Granted Sep 4, 2001·24 cites·7 claims
- 2062US8217498B2Gallium nitride semiconductor device on SOI and process for making sameBHAT RAJARAM·Filed 2007·Granted Jul 10, 2012·2 cites·9 claims
- 2162US5802232ABonded structure with portions of differing crystallographic orientations, particularly useful as a non linear optical waveguideBELL COMMUNICATIONS RES·Filed 1996·Granted Sep 1, 1998·14 cites·22 claims
- 2262US5065200AGeometry dependent doping and electronic devices produced therebyBELL COMMUNICATIONS RES·Filed 1989·Granted Nov 12, 1991·27 cites·11 claims
- 2356US8355422B2Enhanced planarity in GaN edge emitting lasersCORNING INC·Filed 2012·Granted Jan 15, 2013·0 cites·4 claims
- 2452US2022037577A1Multi-showerhead chemical vapor deposition reactor, process and productsCORNING INC·Filed 2020·Application pending·0 cites
- 2548US8318515B2Growth methodology for light emitting semiconductor devicesBHAT RAJARAM·Filed 2009·Granted Nov 27, 2012·0 cites·20 claims
- 2648US8121165B2MQW laser structure comprising plural MQW regionsBHAT RAJARAM·Filed 2011·Granted Feb 21, 2012·0 cites·11 claims
- 2748US5946582AMethod of making an InP-based heterojunction bipolar transistor with reduced base-collector capacitanceTELCORDIA TECH INC·Filed 1997·Granted Aug 31, 1999·10 cites·12 claims
- 2846US8218595B2Enhanced planarity in GaN edge emitting lasersBHAT RAJARAM·Filed 2010·Granted Jul 10, 2012·0 cites·14 claims
- 2946US2012252191A1Gallium nitride semiconductor device on soi and process for making sameBHAT RAJARAM·Filed 2012·Application pending·0 cites
- 3044US2011049469A1Enhanced P-Contacts For Light Emitting DevicesBHAT RAJARAM·Filed 2009·Application pending·0 cites
- 3141US2005112281A1Growth of dilute nitride compoundsFiled 2003·Application pending·0 cites
- 3239US8189639B2GaN-based laser diodes with misfit dislocations displaced from the active regionBHAT RAJARAM·Filed 2010·Granted May 29, 2012·0 cites·22 claims
- 3339US2013322481A1Laser diodes including substrates having semipolar surface plane orientations and nonpolar cleaved facetsBHAT RAJARAM·Filed 2012·Application pending·0 cites
- 3438US2013329760A1Semiconductor lasers with indium containing cladding layersBHAT RAJARAM·Filed 2012·Application pending·0 cites
- 3529US5246878ACapping layer preventing deleterious effects of As--P exchangeBELL COMMUNICATIONS RES·Filed 1992·Granted Sep 21, 1993·4 cites·7 claims
- 3627US5302847ASemiconductor heterostructure having a capping layer preventing deleterious effects of As-P exchangeBELL COMMUNICATIONS RES·Filed 1993·Granted Apr 12, 1994·2 cites·7 claims
Join the waitlist — get patent alerts
Get an alert when Rajaram Bhat files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →