Inventor · disambiguated record
Kurt H. Junker
Also filed as: JUNKER KURT · JUNKER KURT H · JUNKER KURT HILLMAN
18 granted patents·5 pending applications·707 citations·filing 2000–2024
94Inventor score
Files withFREESCALE SEMICONDUCTOR INC14MOTOROLA INC2SPENCER GREGORY S2ADVANCED MICRO DEVICES INC1GRUDOWSKI PAUL A1
Top patents by PatentIndex Score
23 records- 0195US6475930B1UV cure process and tool for low k film formationMOTOROLA INC·Filed 2000·Granted Nov 5, 2002·565 cites·8 claims
- 0294US7799678B2Method for forming a through silicon via layoutFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Sep 21, 2010·44 cites·16 claims
- 0379US7109101B1Capping layer for reducing amorphous carbon contamination of photoresist in semiconductor device manufacture; and process for making sameMOTOROLA INC·Filed 2003·Granted Sep 19, 2006·26 cites·15 claims
- 0477US7144803B2Methods of forming boron carbo-nitride layers for integrated circuit devicesSEMICONDUCTOR RES CORP·Filed 2004·Granted Dec 5, 2006·21 cites·17 claims
- 0575US7678665B2Deep STI trench and SOI undercut enabling STI oxide stressorFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Mar 16, 2010·6 cites·31 claims
- 0675US7579228B2Disposable organic spacersFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 25, 2009·5 cites·20 claims
- 0772US9780051B2Methods for forming semiconductor devices with stepped bond padsTRAN TU-ANH N·Filed 2013·Granted Oct 3, 2017·3 cites·19 claims
- 0870US6992003B2Integration of ultra low K dielectric in a semiconductor fabrication processFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Jan 31, 2006·17 cites·24 claims
- 0969US7678698B2Method of forming a semiconductor device with multiple tensile stressor layersFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Mar 16, 2010·3 cites·18 claims
- 1068US6972255B2Semiconductor device having an organic anti-reflective coating (ARC) and method thereforADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 6, 2005·10 cites·14 claims
- 1167US7776731B2Method of removing defects from a dielectric material in a semiconductorFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 17, 2010·2 cites·20 claims
- 1260US2025300064A1Capacitor formed in interconnect layerNXP USA INC·Filed 2024·Application pending·0 cites
- 1357US9209078B2Method of making a die with recessed aluminum die padsSPENCER GREGORY S·Filed 2014·Granted Dec 8, 2015·1 cites·20 claims
- 1453US7279433B2Deposition and patterning of boron nitride nanotube ILDFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Oct 9, 2007·3 cites·47 claims
- 1552US8039389B2Semiconductor device having an organic anti-reflective coating (ARC) and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Oct 18, 2011·0 cites·2 claims
- 1649US7199429B2Semiconductor device having an organic anti-reflective coating (ARC) and method thereforFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Apr 3, 2007·0 cites·6 claims
- 1745US8722530B2Method of making a die with recessed aluminum die padsSPENCER GREGORY S·Filed 2011·Granted May 13, 2014·0 cites·19 claims
- 1844US7176130B2Plasma treatment for surface of semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Feb 13, 2007·1 cites·23 claims
- 1943US7700499B2Multilayer silicon nitride deposition for a semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Apr 20, 2010·0 cites·22 claims
- 2043US2008173908A1Multilayer silicon nitride deposition for a semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2007·Application pending·0 cites
- 2139US2008026517A1Method for forming a stressor layerGRUDOWSKI PAUL A·Filed 2006·Application pending·0 cites
- 2236US2011210401A1Multilayer silicon nitride deposition for a semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2010·Application pending·0 cites
- 2335US2017053930A1Semiconductor device having a metal oxide metal (mom) capacitor and a plurality of series capacitors and method for formingFREESCALE SEMICONDUCTOR INC·Filed 2015·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Kurt H. Junker files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →