Inventor · disambiguated record
Shiang-Peng Cheng
Also filed as: CHENG SHIANG-PENG
8 granted patents·282 citations·filing 1997–1998
89Inventor score
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8 records- 0191US6017614APlasma-enhanced chemical vapor deposited SIO2 /SI3 N4 multilayer passivation layer for semiconductor applicationsVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Jan 25, 2000·70 cites·4 claims
- 0289US5851603AMethod for making a plasma-enhanced chemical vapor deposited SiO2 Si3 N4 multilayer passivation layer for semiconductor applicationsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Dec 22, 1998·59 cites·18 claims
- 0372US5962344APlasma treatment method for PECVD silicon nitride films for improved passivation layers on semiconductor metal interconnectionsVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Oct 5, 1999·44 cites·25 claims
- 0471US6097041ALight-emitting diode with anti-reflectorKINGMAX TECHNOLOGY INC·Filed 1998·Granted Aug 1, 2000·58 cites·20 claims
- 0553US6169298B1Semiconductor light emitting device with conductive window layerKINGMAX TECHNOLOGY INC·Filed 1998·Granted Jan 2, 2001·20 cites·19 claims
- 0652US6008507APhotoelectric semiconductor device having a GaAsP substrateKINGMAX TECHNOLOGY INC·Filed 1998·Granted Dec 28, 1999·20 cites·18 claims
- 0736US6103639AMethod of reducing pin holes in a nitride passivation layerVANGUARD INT SEMICONDUCT CORP·Filed 1997·Granted Aug 15, 2000·6 cites·22 claims
- 0834US6004877AMethod of forming a tungsten layer with N2 plasma treatmentVANGUARD INT SEMICONDUCT CORP·Filed 1998·Granted Dec 21, 1999·5 cites·14 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →