Inventor · disambiguated record
Juei-Nai Kwo
Also filed as: KWO JUEI-NAI
9 granted patents·2 pending applications·19 citations·filing 2006–2024
84Inventor score
Technology areasH10P
Top patents by PatentIndex Score
11 records- 0193US11749738B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 5, 2023·2 cites·20 claims
- 0293US11245023B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·3 cites·20 claims
- 0388US11114301B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 7, 2021·2 cites·20 claims
- 0481US12113116B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 0581US9214518B1Using molecular beam epitaxy in a semiconductor structure with a high K/GaSb interfaceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 15, 2015·6 cites·8 claims
- 0681US2024387684A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0778US10748774B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·2 cites·20 claims
- 0876US11201055B2Semiconductor device having high-κ dielectric layer and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 14, 2021·3 cites·20 claims
- 0973US2025098279A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1068US12191205B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 1156US7678633B2Method for forming substrates for MOS transistor components and its productsUNIV TSINGHUA·Filed 2006·Granted Mar 16, 2010·1 cites·26 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →