Inventor · disambiguated record
Ming-Hwei Hong
Also filed as: HONG MING-HWEI
9 granted patents·1 pending application·17 citations·filing 2006–2024
83Inventor score
Technology areasH10P
Top patents by PatentIndex Score
10 records- 0193US11749738B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Sep 5, 2023·2 cites·20 claims
- 0293US11245023B1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 8, 2022·3 cites·20 claims
- 0388US11114301B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 7, 2021·2 cites·20 claims
- 0481US12113116B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Oct 8, 2024·0 cites·20 claims
- 0581US9214518B1Using molecular beam epitaxy in a semiconductor structure with a high K/GaSb interfaceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Dec 15, 2015·6 cites·8 claims
- 0681US2024387684A1Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0778US10748774B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 18, 2020·2 cites·20 claims
- 0856US7678633B2Method for forming substrates for MOS transistor components and its productsUNIV TSINGHUA·Filed 2006·Granted Mar 16, 2010·1 cites·26 claims
- 0953US8859441B2Method and system for manufacturing semiconductor deviceHONG MING-HWEI·Filed 2012·Granted Oct 14, 2014·1 cites·6 claims
- 1045US7235467B2Method for forming a semiconductor device having a structure of a single crystal scandium oxide film formed on a silicon substrateUNIV TSINGHUA·Filed 2006·Granted Jun 26, 2007·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →