Inventor · disambiguated record
Philip J. Oldiges
Also filed as: OLDIGES PHILIP · OLDIGES PHILIP J · OLDIGES PHILIP JOSEPH
53 granted patents·5 pending applications·301 citations·filing 2001–2021
98Inventor score
Top patents by PatentIndex Score
58 records- 0199US9853028B1Vertical FET with reduced parasitic capacitanceIBM·Filed 2017·Granted Dec 26, 2017·33 cites·20 claims
- 0295US7365378B2MOSFET structure with ultra-low K spacerIBM·Filed 2005·Granted Apr 29, 2008·32 cites·19 claims
- 0393US8361847B2Stressed channel FET with source/drain buffersIBM·Filed 2011·Granted Jan 29, 2013·16 cites·15 claims
- 0490US9515171B1Radiation tolerant device structureIBM·Filed 2015·Granted Dec 6, 2016·6 cites·20 claims
- 0589US9553173B1Asymmetric finFET memory access transistorIBM·Filed 2015·Granted Jan 24, 2017·5 cites·15 claims
- 0686US6686630B2Damascene double-gate MOSFET structure and its fabrication methodIBM·Filed 2001·Granted Feb 3, 2004·44 cites·4 claims
- 0785US8304301B2Implant free extremely thin semiconductor devicesCHENG KANGGUO·Filed 2009·Granted Nov 6, 2012·9 cites·15 claims
- 0885US7888959B2Apparatus and method for hardening latches in SOI CMOS devicesIBM·Filed 2007·Granted Feb 15, 2011·11 cites·4 claims
- 0984US7220626B2Structure and method for manufacturing planar strained Si/SiGe substrate with multiple orientations and different stress levelsIBM·Filed 2005·Granted May 22, 2007·10 cites·16 claims
- 1083US7315075B2Capacitor below the buried oxide of SOI CMOS technologies for protection against soft errorsIBM·Filed 2005·Granted Jan 1, 2008·8 cites·12 claims
- 1182US8288217B2Stressor in planar field effect transistor deviceGUO DECHAO·Filed 2010·Granted Oct 16, 2012·6 cites·18 claims
- 1282US7452761B2Hybrid SOI-bulk semiconductor transistorsIBM·Filed 2007·Granted Nov 18, 2008·7 cites·4 claims
- 1381US8541814B2Minimizing leakage current and junction capacitance in CMOS transistors by utilizing dielectric spacersCHIDAMBARRAO DURESETI·Filed 2011·Granted Sep 24, 2013·4 cites·8 claims
- 1480US10297688B2Vertical field effect transistor with improved reliabilityIBM·Filed 2018·Granted May 21, 2019·2 cites·18 claims
- 1579US9583624B1Asymmetric finFET memory access transistorIBM·Filed 2015·Granted Feb 28, 2017·2 cites·6 claims
- 1679US7627840B2Method for soft error modeling with double current pulseIBM·Filed 2006·Granted Dec 1, 2009·11 cites·20 claims
- 1779US6924517B2Thin channel FET with recessed source/drains and extensionsIBM·Filed 2003·Granted Aug 2, 2005·23 cites·28 claims
- 1878US9064739B2Techniques for quantifying fin-thickness variation in FINFET technologyIBM·Filed 2013·Granted Jun 23, 2015·3 cites·5 claims
- 1978US8492852B2Interface structure for channel mobility improvement in high-k metal gate stackCHEN TZE-CHIANG·Filed 2010·Granted Jul 23, 2013·5 cites·30 claims
- 2078US7767503B2Hybrid SOI/bulk semiconductor transistorsIBM·Filed 2008·Granted Aug 3, 2010·5 cites·7 claims
- 2177US7348641B2Structure and method of making double-gated self-aligned finFET having gates of different lengthsIBM·Filed 2004·Granted Mar 25, 2008·18 cites·16 claims
- 2276US10074652B1Vertical FET with reduced parasitic capacitanceIBM·Filed 2017·Granted Sep 11, 2018·1 cites·20 claims
- 2376US8921939B2Stressed channel FET with source/drain buffersIBM·Filed 2013·Granted Dec 30, 2014·3 cites·8 claims
- 2473US8940558B2Techniques for quantifying fin-thickness variation in FINFET technologyIBM·Filed 2013·Granted Jan 27, 2015·2 cites·15 claims
- 2573US7388274B2Capacitor below the buried oxide of SOI CMOS technologies for protection against soft errorsIBM·Filed 2007·Granted Jun 17, 2008·4 cites·13 claims
- 2671US8806419B2Apparatus for modeling of FinFET width quantizationIBM·Filed 2013·Granted Aug 12, 2014·2 cites·9 claims
- 2771US8799848B1Methods for modeling of FinFET width quantizationIBM·Filed 2013·Granted Aug 5, 2014·2 cites·12 claims
- 2870US8338258B2Embedded stressor for semiconductor structuresGUO DECHAO·Filed 2009·Granted Dec 25, 2012·3 cites·11 claims
- 2968US7883944B2Ultra-thin semiconductor on insulator metal gate complementary field effect transistor with metal gate and method of forming thereofIBM·Filed 2009·Granted Feb 8, 2011·2 cites·13 claims
- 3064US10438949B2Vertical FET with reduced parasitic capacitanceIBM·Filed 2019·Granted Oct 8, 2019·0 cites·20 claims
- 3163US7691482B2Structure for planar SOI substrate with multiple orientationsIBM·Filed 2006·Granted Apr 6, 2010·1 cites·7 claims
- 3262US10957780B2Non-uniform gate dielectric for U-shape MOSFETIBM·Filed 2019·Granted Mar 23, 2021·0 cites·16 claims
- 3362US10283504B2Vertical FET with reduced parasitic capacitanceIBM·Filed 2018·Granted May 7, 2019·0 cites·20 claims
- 3462US7064414B2Heater for annealing trapped charge in a semiconductor deviceIBM·Filed 2004·Granted Jun 20, 2006·10 cites·29 claims
- 3561US9034715B2Method and structure for dielectric isolation in a fin field effect transistorIBM·Filed 2013·Granted May 19, 2015·1 cites·9 claims
- 3660US7923782B2Hybrid SOI/bulk semiconductor transistorsIBM·Filed 2004·Granted Apr 12, 2011·6 cites·15 claims
- 3759US7785944B2Method of making double-gated self-aligned finFET having gates of different lengthsIBM·Filed 2008·Granted Aug 31, 2010·1 cites·16 claims
- 3858US11910731B2Embedded heater in a phase change memory materialIBM·Filed 2021·Granted Feb 20, 2024·0 cites·9 claims
- 3958US8053317B2Method and structure for improving uniformity of passive devices in metal gate technologyIBM·Filed 2009·Granted Nov 8, 2011·1 cites·25 claims
- 4057US10256319B2Non-uniform gate dielectric for U-shape MOSFETIBM·Filed 2017·Granted Apr 9, 2019·0 cites·9 claims
- 4157US7776725B2Anti-halo compensationIBM·Filed 2005·Granted Aug 17, 2010·1 cites·16 claims
- 4256US10468524B2Vertical field effect transistor with improved reliabilityIBM·Filed 2017·Granted Nov 5, 2019·0 cites·11 claims
- 4356US9058441B2Methods for modeling of FinFET width quantizationIBM·Filed 2014·Granted Jun 16, 2015·0 cites·10 claims
- 4455US11152378B1Reducing error rates with alpha particle protectionIBM·Filed 2020·Granted Oct 19, 2021·0 cites·20 claims
- 4555US8993395B2Minimizing leakage current and junction capacitance in CMOS transistors by utilizing dielectric spacersIBM·Filed 2013·Granted Mar 31, 2015·0 cites·9 claims
- 4655US8890256B2Structure for heavy ion tolerant device, method of manufacturing the same and structure thereofHAKEY MARK C·Filed 2009·Granted Nov 18, 2014·1 cites·24 claims
- 4752US9825094B2FinFET PCM access transistor having gate-wrapped source and drain regionsGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 21, 2017·0 cites·15 claims
- 4852US9825093B2FinFET PCM access transistor having gate-wrapped source and drain regionsGLOBALFOUNDRIES INC·Filed 2015·Granted Nov 21, 2017·0 cites·9 claims
- 4952US8710588B2Implant free extremely thin semiconductor devicesCHENG KANGGUO·Filed 2012·Granted Apr 29, 2014·0 cites·20 claims
- 5052US8354720B2Embedded stressor for semiconductor structuresIBM·Filed 2012·Granted Jan 15, 2013·0 cites·10 claims
Showing the top 50 of 58 patent records by PatentIndex Score.
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