Inventor · disambiguated record
Ralf Henninger
Also filed as: HENNINGER RALF
12 granted patents·1 pending application·594 citations·filing 2002–2008
93Inventor score
Top patents by PatentIndex Score
13 records- 0196US6690062B2Transistor configuration with a shielding electrode outside an active cell array and a reduced gate-drain capacitanceINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 10, 2004·119 cites·20 claims
- 0295US7005351B2Method for fabricating a transistor configuration including trench transistor cells having a field electrode, trench transistor, and trench configurationINFINEON TECHNOLOGIES AG·Filed 2003·Granted Feb 28, 2006·113 cites·28 claims
- 0393US6833584B2Trench power semiconductorINFINEON TECHNOLOGIES AG·Filed 2002·Granted Dec 21, 2004·96 cites·8 claims
- 0493US6806533B2Semiconductor component with an increased breakdown voltage in the edge areaINFINEON TECHNOLOGIES AG·Filed 2003·Granted Oct 19, 2004·83 cites·10 claims
- 0592US7777278B2Lateral semiconductor component with a drift zone having at least one field electrodeINFINEON TECHNOLOGIES AG·Filed 2008·Granted Aug 17, 2010·22 cites·20 claims
- 0691US7091573B2Power transistorINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 15, 2006·62 cites·8 claims
- 0790US6891223B2Transistor configuration with a structure for making electrical contact with electrodes of a trench transistor cellINFINEON TECHNOLOGIES AG·Filed 2003·Granted May 10, 2005·52 cites·16 claims
- 0879US7274077B2Trench transistorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Sep 25, 2007·8 cites·20 claims
- 0978US7173306B2Vertical semiconductor component having a drift zone having a field electrode, and method for fabricating such a drift zoneINFINEON TECHNOLOGIES AG·Filed 2004·Granted Feb 6, 2007·22 cites·21 claims
- 1068US7060562B2Method for fabricating gate electrodes in a field plate trench transistor, and field plate trench transistorINFINEON TECHNOLOGIES AG·Filed 2005·Granted Jun 13, 2006·4 cites·20 claims
- 1163US6927101B2Field-effect-controllable semiconductor component and method for fabricating the componentINFINEON TECHNOLOGIES AG·Filed 2003·Granted Aug 9, 2005·8 cites·24 claims
- 1256US6903416B2Trench transistors and methods for fabricating trench transistorsINFINEON TECHNOLOGIES AG·Filed 2003·Granted Jun 7, 2005·5 cites·11 claims
- 1339US2006006386A1Lateral semiconductor component with a drift zone having at least one field electrodeHIRLER FRANZ·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →