Inventor · disambiguated record
Steven Peake
Also filed as: PEAKE STEVEN · PEAKE STEVEN T · PEAKE STEVEN THOMAS
35 granted patents·10 pending applications·454 citations·filing 2001–2025
97Inventor score
Files withKONINKL PHILIPS ELECTRONICS NV17Nexperia BV14NXP BV11PEAKE STEVEN THOMAS2INT RECTIFIER CORP1
Top patents by PatentIndex Score
45 records- 0194US6825105B2Manufacture of semiconductor devices with Schottky barriersKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Nov 30, 2004·87 cites·15 claims
- 0292US7465986B2Power semiconductor device including insulated source electrodes inside trenchesINT RECTIFIER CORP·Filed 2005·Granted Dec 16, 2008·25 cites·34 claims
- 0391US9006822B2Trench-gate RESURF semiconductor device and manufacturing methodNXP BV·Filed 2012·Granted Apr 14, 2015·13 cites·12 claims
- 0491US6566708B1Trench-gate field-effect transistors with low gate-drain capacitance and their manufactureKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted May 20, 2003·66 cites·8 claims
- 0590US7504307B2Semiconductor devices including voltage-sustaining space-charge zone and methods of manufacture thereofNXP BV·Filed 2005·Granted Mar 17, 2009·19 cites·17 claims
- 0689US6534367B2Trench-gate semiconductor devices and their manufactureKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Mar 18, 2003·67 cites·18 claims
- 0782US7504690B2Power semiconductor devicesNXP BV·Filed 2003·Granted Mar 17, 2009·30 cites·16 claims
- 0882US7122860B2Trench-gate semiconductor devicesKONINKL PHILIPS ELECTRONICS NV·Filed 2003·Granted Oct 17, 2006·33 cites·11 claims
- 0979US6660591B2Trench-gate semiconductor devices having a channel-accommodating region and their methods of manufactureKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Dec 9, 2003·31 cites·24 claims
- 1076US9570605B1Semiconductor device having a plurality of source lines being laid in both X and Y directionsNXP BV·Filed 2016·Granted Feb 14, 2017·2 cites·9 claims
- 1176US6664593B2Field effect transistor structure and method of manufactureKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Dec 16, 2003·18 cites·6 claims
- 1273US6677642B2Field effect transistor structure and method of manufactureKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Jan 13, 2004·16 cites·6 claims
- 1372US7232726B2Trench-gate semiconductor device and method of manufacturingNXP BV·Filed 2003·Granted Jun 19, 2007·19 cites·12 claims
- 1471US8357971B2Trench gate MOSFET and method of manufacturing the sameNXP BV·Filed 2008·Granted Jan 22, 2013·4 cites·11 claims
- 1566US7682889B2Trench field effect transistor and method of making itNXP BV·Filed 2005·Granted Mar 23, 2010·3 cites·10 claims
- 1666US7579649B2Trench field effect transistor and method of making itNXP BV·Filed 2005·Granted Aug 25, 2009·3 cites·14 claims
- 1763US2025072029A1Method of Manufacturing MOSFETsNexperia BV·Filed 2024·Application pending·0 cites
- 1858US6979865B2Cellular mosfet devices and their manufactureKONINKL PHILIPS ELECTRONICS NV·Filed 2003·Granted Dec 27, 2005·9 cites·13 claims
- 1956US2023369140A1Semiconductor device and a method for manufacturing a semiconductor deviceNexperia BV·Filed 2023·Application pending·0 cites
- 2056US2025318212A1Semiconductor device and a metal oxide semiconductor field effect transistor implementing such semiconductor deviceNexperia BV·Filed 2025·Application pending·0 cites
- 2155US11335677B2Combined MCD and MOS transistor semiconductor deviceNexperia BV·Filed 2020·Granted May 17, 2022·0 cites·16 claims
- 2255US2023246104A1Metal oxide semiconductor field effect transistor and method of manufacturingNexperia BV·Filed 2023·Application pending·0 cites
- 2354US2023335634A1Trench-gate semiconductor device and method for manufacturing the sameNexperia BV·Filed 2023·Application pending·0 cites
- 2453US12342569B2Trench MOSFETNexperia BV·Filed 2022·Granted Jun 24, 2025·0 cites·15 claims
- 2553US11222974B2Trench gate semiconductor device and method of manufactureNexperia BV·Filed 2020·Granted Jan 11, 2022·0 cites·16 claims
- 2648US10032907B2TrenchMOSNexperia BV·Filed 2016·Granted Jul 24, 2018·0 cites·17 claims
- 2748US2022231162A1Trench-gate semiconductor deviceNexperia BV·Filed 2022·Application pending·0 cites
- 2847US9735254B2Trench-gate RESURF semiconductor device and manufacturing methodNexperia BV·Filed 2015·Granted Aug 15, 2017·0 cites·12 claims
- 2945US7332771B2Trench-gate semiconductor devicesNXP BV·Filed 2003·Granted Feb 19, 2008·2 cites·15 claims
- 3045US6780722B2Field effect transistor on insulating layer and manufacturing methodKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Aug 24, 2004·2 cites·9 claims
- 3144US9985092B2PowerMOSNexperia BV·Filed 2016·Granted May 29, 2018·0 cites·13 claims
- 3244US6800900B2Trench-gate semiconductor devices and their manufactureKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Oct 5, 2004·2 cites·17 claims
- 3341US10153365B2Semiconductor device and a method of making a semiconductor deviceNexperia BV·Filed 2016·Granted Dec 11, 2018·0 cites·9 claims
- 3441US7122433B2Method for manufacturing trench gate semiconductor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2004·Granted Oct 17, 2006·1 cites·4 claims
- 3539US2009020832A1Semiconductor Devices and the Manufacture ThereofKONINKL PHILIPS ELECTRONICS NV·Filed 2005·Application pending·0 cites
- 3638US9048116B2Semiconductor device having isolation trenchesNXP BV·Filed 2012·Granted Jun 2, 2015·0 cites·11 claims
- 3738US8901638B2Trench-gate semiconductor devicePEAKE STEVEN THOMAS·Filed 2009·Granted Dec 2, 2014·0 cites·11 claims
- 3837US7642596B2Insulated gate field effect transistorNXP BV·Filed 2004·Granted Jan 5, 2010·0 cites·13 claims
- 3936US6629303B2Semiconductor device layoutKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Sep 30, 2003·2 cites·13 claims
- 4035US8513733B2Edge termination region of a semiconductor devicePEAKE STEVEN THOMAS·Filed 2011·Granted Aug 20, 2013·0 cites·13 claims
- 4135US2003080376A1Transistor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Application pending·0 cites
- 4235US2003073289A1Trench-gate semiconductor devices and their manufactureKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Application pending·0 cites
- 4334US9941265B2Circuitry with voltage limiting and capactive enhancementNexperia BV·Filed 2016·Granted Apr 10, 2018·0 cites·14 claims
- 4433US6753588B2Semiconductor rectifierKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Jun 22, 2004·0 cites·8 claims
- 4532US2008094124A1Mosfet Device and Related Method of OperationKONINKL PHILIPS ELECTRONICS NV·Filed 2005·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →