Inventor · disambiguated record
Thomas N. Horsky
Also filed as: HORSKY THOMAS N · HORSKY THOMAS NEIL
49 granted patents·14 pending applications·1,784 citations·filing 1991–2015
99Inventor score
Top patents by PatentIndex Score
63 records- 0197US8097529B2System and method for the manufacture of semiconductor devices by the implantation of carbon clustersKRULL WADE A·Filed 2009·Granted Jan 17, 2012·103 cites·4 claims
- 0297US6452338B1Electron beam ion source with integral low-temperature vaporizerSEMEQUIP INC·Filed 2000·Granted Sep 17, 2002·151 cites·35 claims
- 0396US7629590B2Method and apparatus for extending equipment uptime in ion implantationSEMEQUIP INC·Filed 2006·Granted Dec 8, 2009·41 cites·22 claims
- 0496US7609003B2Ion implantation system and control methodSEMEQUIP INC·Filed 2006·Granted Oct 27, 2009·43 cites·5 claims
- 0596US7022999B2Ion implantation ion source, system and methodSEMEQUIP INC·Filed 2004·Granted Apr 4, 2006·66 cites·31 claims
- 0696US6686595B2Electron impact ion sourceSEMEQUIP INC·Filed 2002·Granted Feb 3, 2004·77 cites·6 claims
- 0796US5471341AMembrane light modulating systemsOPTRON SYSTEMS INC·Filed 1993·Granted Nov 28, 1995·219 cites·9 claims
- 0896US5287215AMembrane light modulation systemsOPTRON SYSTEMS INC·Filed 1991·Granted Feb 15, 1994·246 cites·14 claims
- 0995US7834554B2Dual mode ion source for ion implantationSEMEQUIP INC·Filed 2007·Granted Nov 16, 2010·20 cites·28 claims
- 1095US7666771B2System and method for the manufacture of semiconductor devices by the implantation of carbon clustersSEMEQUIP INC·Filed 2006·Granted Feb 23, 2010·30 cites·2 claims
- 1195US7491953B2Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ionsSEMEQUIP INC·Filed 2006·Granted Feb 17, 2009·25 cites·8 claims
- 1295US7185602B2Ion implantation ion source, system and methodSEMEQUIP INC·Filed 2004·Granted Mar 6, 2007·54 cites·23 claims
- 1395US7107929B2Ion implantation ion source, system and methodSEMEQUIP INC·Filed 2002·Granted Sep 19, 2006·61 cites·70 claims
- 1494US7800312B2Dual mode ion source for ion implantationSEMEQUIP INC·Filed 2006·Granted Sep 21, 2010·14 cites·21 claims
- 1594US6768121B2Ion source having replaceable and sputterable solid source materialAXCELIS TECH INC·Filed 2003·Granted Jul 27, 2004·59 cites·9 claims
- 1693US8110820B2Ion beam apparatus and method for ion implantationGLAVISH HILTON F·Filed 2007·Granted Feb 7, 2012·23 cites·50 claims
- 1793US7838850B2External cathode ion sourceSEMEQUIP INC·Filed 2008·Granted Nov 23, 2010·24 cites·14 claims
- 1893US7838842B2Dual mode ion source for ion implantationSEMEQUIP INC·Filed 2005·Granted Nov 23, 2010·17 cites·22 claims
- 1993US6288403B1Decaborane ionizerAXCELIS TECH INC·Filed 1999·Granted Sep 11, 2001·89 cites·10 claims
- 2092US7791047B2Method and apparatus for extracting ions from an ion source for use in ion implantationSEMEQUIP INC·Filed 2006·Granted Sep 7, 2010·17 cites·5 claims
- 2192US7112804B2Ion implantation ion source, system and methodSEMEQUIP INC·Filed 2004·Granted Sep 26, 2006·37 cites·5 claims
- 2292US6583544B1Ion source having replaceable and sputterable solid source materialAXCELIS TECH INC·Filed 2000·Granted Jun 24, 2003·44 cites·13 claims
- 2391US8071958B2Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ionsHORSKY THOMAS N·Filed 2008·Granted Dec 6, 2011·11 cites·6 claims
- 2491US6744214B2Electron beam ion source with integral low-temperature vaporizerSEMEQUIP INC·Filed 2002·Granted Jun 1, 2004·44 cites·11 claims
- 2590US7919402B2Cluster ion implantation for defect engineeringSEMEQUIP INC·Filed 2008·Granted Apr 5, 2011·25 cites·17 claims
- 2690US7479643B2Ion implantation ion source, system and methodSEMEQUIP INC·Filed 2005·Granted Jan 20, 2009·9 cites·13 claims
- 2790US7064491B2Ion implantation system and control methodSEMEQUIP INC·Filed 2001·Granted Jun 20, 2006·40 cites·27 claims
- 2889US8436326B2Ion beam apparatus and method employing magnetic scanningGLAVISH HILTON F·Filed 2010·Granted May 7, 2013·9 cites·5 claims
- 2989US7394202B2Ion implantation system and control methodSEMEQUIP INC·Filed 2006·Granted Jul 1, 2008·12 cites·1 claims
- 3088US8618514B2Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ionsHORSKY THOMAS N·Filed 2011·Granted Dec 31, 2013·5 cites·6 claims
- 3187US8154210B2Ion implantation ion source, system and methodHORSKY THOMAS NEIL·Filed 2009·Granted Apr 10, 2012·9 cites·65 claims
- 3287US7820981B2Method and apparatus for extending equipment uptime in ion implantationSEMEQUIP INC·Filed 2004·Granted Oct 26, 2010·30 cites·62 claims
- 3387US6958481B2Decaborane ion sourceAXCELIS TECH INC·Filed 2001·Granted Oct 25, 2005·27 cites·10 claims
- 3486US7851773B2Ion beam apparatus and method employing magnetic scanningSEMIQUIP INC·Filed 2007·Granted Dec 14, 2010·13 cites·40 claims
- 3585US7928406B2Method and system for extracting ion beams composed of molecular ions (cluster ion beam extraction system)SEMEQUIP INC·Filed 2008·Granted Apr 19, 2011·8 cites·9 claims
- 3685US7732787B2Ion implantation ion source, system and methodSEMEQUIP INC·Filed 2006·Granted Jun 8, 2010·5 cites·4 claims
- 3783US8994272B2Ion source having at least one electron gun comprising a gas inlet and a plasma region defined by an anode and a ground element thereofNISSIN ION EQUIPMENT CO LTD·Filed 2013·Granted Mar 31, 2015·5 cites·23 claims
- 3882US9865422B2Plasma generator with at least one non-metallic componentNISSIN ION EQUIPMENT CO LTD·Filed 2015·Granted Jan 9, 2018·3 cites·9 claims
- 3982US8530343B2System and method for the manufacture of semiconductor devices by the implantation of carbon clustersKRULL WADE A·Filed 2011·Granted Sep 10, 2013·4 cites·13 claims
- 4082US8410459B2Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ionsHORSKY THOMAS N·Filed 2011·Granted Apr 2, 2013·3 cites·2 claims
- 4182US8368309B2Method and apparatus for extracting ions from an ion source for use in ion implantationSEMEQUIP INC·Filed 2006·Granted Feb 5, 2013·6 cites·23 claims
- 4281US7723700B2Controlling the flow of vapors sublimated from solidsSEMEQUIP INC·Filed 2004·Granted May 25, 2010·20 cites·40 claims
- 4379US7960709B2Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ionsSEMEQUIP INC·Filed 2003·Granted Jun 14, 2011·18 cites·20 claims
- 4477US7023138B2Electron impact ion sourceSEMEQUIP INC·Filed 2003·Granted Apr 4, 2006·11 cites·4 claims
- 4575US7528550B2Ion implantation system and control methodSEMEQUIP INC·Filed 2006·Granted May 5, 2009·3 cites·36 claims
- 4666US8330118B2Multi mode ion sourceHORSKY THOMAS N·Filed 2009·Granted Dec 11, 2012·1 cites·23 claims
- 4764US8502161B2External cathode ion sourceHAHTO SAMI K·Filed 2010·Granted Aug 6, 2013·2 cites·11 claims
- 4864US7994031B2Method of manufacturing CMOS devices by the implantation of N- and P-type cluster ionsSEMEQUIP INC·Filed 2006·Granted Aug 9, 2011·1 cites·42 claims
- 4959US2014061816A1Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ionsSEMEQUIP INC·Filed 2013·Application pending·0 cites
- 5056US2007181830A1Ion implantation device and a method of semiconductor manufacturing by the implantation of boron hydride cluster ionsSEMEQUIP INC·Filed 2006·Application pending·0 cites
Showing the top 50 of 63 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →