Inventor · disambiguated record
Moon-Han Park
Also filed as: PARK MOON-HAN
34 granted patents·7 pending applications·790 citations·filing 1996–2020
98Inventor score
Top patents by PatentIndex Score
41 records- 0194US6566229B2Method of forming an insulating layer in a trench isolation type semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted May 20, 2003·102 cites·14 claims
- 0293US6835621B2Method of fabricating non-volatile memory device having a structure of silicon-oxide-nitride-oxide-siliconSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Dec 28, 2004·69 cites·9 claims
- 0392US6461937B1Methods of forming trench isolation regions having recess-inhibiting layers therein that protect against overetchingSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 8, 2002·78 cites·7 claims
- 0489US7385247B2At least penta-sided-channel type of FinFET transistorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 10, 2008·46 cites·27 claims
- 0589US6717231B2Trench isolation regions having recess-inhibiting layers therein that protect against overetchingSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 6, 2004·52 cites·6 claims
- 0688US11069820B2FinFET devices having active patterns and gate spacers on field insulating layersSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jul 20, 2021·2 cites·18 claims
- 0788US6331469B1Trench isolation structure, semiconductor device having the same, and trench isolation methodSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Dec 18, 2001·43 cites·20 claims
- 0887US7723193B2Method of forming an at least penta-sided-channel type of FinFET transistorSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 25, 2010·13 cites·16 claims
- 0987US6482715B2Method of forming shallow trench isolation layer in semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Nov 19, 2002·48 cites·24 claims
- 1085US6465866B2Trench isolation regions having trench liners with recessed endsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Oct 15, 2002·34 cites·10 claims
- 1184US6037237ATrench isolation methods utilizing composite oxide filmsSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Mar 14, 2000·74 cites·15 claims
- 1281US10224204B1Method of manufacturing integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Mar 5, 2019·3 cites·20 claims
- 1381US7033895B2Method of fabricating a MOS transistor with elevated source/drain structure using a selective epitaxial growth processSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 25, 2006·22 cites·24 claims
- 1472US7439596B2Transistors for semiconductor device and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 21, 2008·5 cites·9 claims
- 1572US5885883AMethods of forming trench-based isolation regions with reduced susceptibility to edge defectsSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Mar 23, 1999·40 cites·15 claims
- 1671US5728620AIsolation method of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Mar 17, 1998·40 cites·9 claims
- 1769US6537914B1Integrated circuit device isolation methods using high selectivity chemical-mechanical polishingSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Mar 25, 2003·12 cites·12 claims
- 1867US8815673B2Methods of forming MOSFET devices using nitrogen-injected oxide layers to form gate insulating layers having different thicknessesDO JIN-HO·Filed 2012·Granted Aug 26, 2014·3 cites·13 claims
- 1966US6878575B2Method of forming gate oxide layer in semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 12, 2005·11 cites·15 claims
- 2065US8877579B2Methods of manufacturing semiconductor devicesSONG MOON-KYUN·Filed 2012·Granted Nov 4, 2014·3 cites·4 claims
- 2163US7294546B2Capacitor for a semiconductor device and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 13, 2007·2 cites·9 claims
- 2263US5858858AAnnealing methods for forming isolation trenchesSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Jan 12, 1999·28 cites·23 claims
- 2356US6987310B2Multi-layered structure including an epitaxial layer having a low dislocation defect density, semiconductor device comprising the same, and method of fabricating the semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jan 17, 2006·4 cites·24 claims
- 2456US6875670B2Trench isolation methodSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 5, 2005·7 cites·12 claims
- 2555US6083808AMethod for forming a trench isolation in a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 1998·Granted Jul 4, 2000·19 cites·13 claims
- 2654US10658249B2Methods for fabricating finFET devices having gate spacers on field insulating layersSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted May 19, 2020·0 cites·16 claims
- 2751US7368792B2MOS transistor with elevated source/drain structureSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted May 6, 2008·0 cites·11 claims
- 2849US5674782AMethod for efficiently removing by-products produced in dry-etchingSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Oct 7, 1997·15 cites·16 claims
- 2947US2009020845A1Shallow trench isolation structures for semiconductor devices including doped oxide film liners and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3047US2006183296A1Isolation method for semiconductor deviceYOO JAE-YOON·Filed 2006·Application pending·0 cites
- 3146US10755932B2Method of manufacturing integrated circuit deviceSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 25, 2020·0 cites·20 claims
- 3245US9793399B2Semiconductor device having insulating pattern and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 17, 2017·0 cites·20 claims
- 3344US8455345B2Methods of forming gate structure and methods of manufacturing semiconductor device including the sameLIM HA-JIN·Filed 2011·Granted Jun 4, 2013·0 cites·20 claims
- 3442US2009085125A1MOS transistor and CMOS transistor having strained channel epi layer and methods of fabricating the transistorsSAMSUNG ELECTRONICS CO LTD·Filed 2008·Application pending·0 cites
- 3541US5866435AMethods of fabricating profiled device isolation trenches in integrated circuitsSAMSUNG ELECTRONICS CO LTD·Filed 1996·Granted Feb 2, 1999·9 cites·18 claims
- 3641US2005274981A1Multi-layered structure including an epitaxial layer having a low dislocation defect density, semiconductor device comprising the same, and method of fabricating the semiconductor deviceLEE HO·Filed 2005·Application pending·0 cites
- 3739US2002197823A1Isolation method for semiconductor deviceFiled 2002·Application pending·0 cites
- 3838US8664111B2Method of patterning a semiconductor device with hard maskLIM HA-JIN·Filed 2011·Granted Mar 4, 2014·0 cites·8 claims
- 3938US2004084709A1Capacitor for a semiconductor device and method of fabricating sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Application pending·0 cites
- 4037US6624041B2Method for forming trench type isolation film using annealingSAMSUNG ELECTRONICS CO LTD·Filed 1999·Granted Sep 23, 2003·6 cites·10 claims
- 4137US2010233864A1Methods of fabricating a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2010·Application pending·0 cites
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