Inventor · disambiguated record
Hwa-Sung Rhee
Also filed as: RHEE HWA-SUNG
71 granted patents·23 pending applications·1,360 citations·filing 2000–2019
99Inventor score
Top patents by PatentIndex Score
94 records- 0199US7642140B2CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Jan 5, 2010·135 cites·10 claims
- 0297US7952147B2Semiconductor device having analog transistor with improved operating and flicker noise characteristics and method of making sameSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted May 31, 2011·122 cites·12 claims
- 0397US7361563B2Methods of fabricating a semiconductor device using a selective epitaxial growth techniqueSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 22, 2008·94 cites·26 claims
- 0497US6633066B1CMOS integrated circuit devices and substrates having unstrained silicon active layersSAMSUNG ELECTRONICS CO LTD·Filed 2000·Granted Oct 14, 2003·124 cites·12 claims
- 0596US7183172B2Method of forming silicon-on-insulator (SOI) semiconductor substrate and SOI semiconductor substrate formed therebySAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 27, 2007·95 cites·6 claims
- 0694US9984886B2Semiconductor devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted May 29, 2018·10 cites·20 claims
- 0794US9673330B2Integrated circuit devices and methods of manufacturing the sameCHUNG JAE-YUP·Filed 2015·Granted Jun 6, 2017·12 cites·20 claims
- 0894US7195987B2Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers thereinSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 27, 2007·26 cites·17 claims
- 0992US9318573B2Field effect transistor having germanium nanorod and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Apr 19, 2016·15 cites·13 claims
- 1092US7354835B2Method of fabricating CMOS transistor and CMOS transistor fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 8, 2008·26 cites·16 claims
- 1191US9922979B2Integrated circuit device and method of manufacturing the sameCHUNG JAE YUP·Filed 2016·Granted Mar 20, 2018·12 cites·20 claims
- 1291US6670677B2SOI substrate having an etch stop layer and an SOI integrated circuit fabricated thereonSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Dec 30, 2003·45 cites·15 claims
- 1389US10032886B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 24, 2018·8 cites·11 claims
- 1489US7671420B2Semiconductor devices having faceted channels and methods of fabricating such devicesSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Mar 2, 2010·28 cites·17 claims
- 1589US7385247B2At least penta-sided-channel type of FinFET transistorSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Jun 10, 2008·46 cites·27 claims
- 1689US6806517B2Flash memory having local SONOS structure using notched gate and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Oct 19, 2004·47 cites·20 claims
- 1787US8426916B2Semiconductor integrated circuit devices having different thickness silicon-germanium layersKIM MYUNG-SUN·Filed 2012·Granted Apr 23, 2013·7 cites·6 claims
- 1887US7723193B2Method of forming an at least penta-sided-channel type of FinFET transistorSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted May 25, 2010·13 cites·16 claims
- 1987US6518645B2SOI-type semiconductor device and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 11, 2003·44 cites·16 claims
- 2086US7250655B2MOS transistor having a T-shaped gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 31, 2007·38 cites·17 claims
- 2185US7601983B2Transistor and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 13, 2009·13 cites·19 claims
- 2285US7576395B2Dual gate stack CMOS structure with different dielectricsSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 18, 2009·11 cites·11 claims
- 2385US6605847B2Semiconductor device having gate all around type transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Aug 12, 2003·32 cites·10 claims
- 2484US7611951B2Method of fabricating MOS transistor having epitaxial regionSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Nov 3, 2009·9 cites·23 claims
- 2583US6693013B2Semiconductor transistor using L-shaped spacer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Feb 17, 2004·29 cites·21 claims
- 2682US6667525B2Semiconductor device having hetero grain stack gateSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Dec 23, 2003·24 cites·12 claims
- 2782US6524902B2Method of manufacturing CMOS semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Feb 25, 2003·26 cites·11 claims
- 2881US7033895B2Method of fabricating a MOS transistor with elevated source/drain structure using a selective epitaxial growth processSAMSUNG ELECTRONICS CO LTD·Filed 2004·Granted Apr 25, 2006·22 cites·24 claims
- 2980US7611973B2Methods of selectively forming epitaxial semiconductor layer on single crystalline semiconductor and semiconductor devices fabricated using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Nov 3, 2009·7 cites·43 claims
- 3080US6914301B2CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and methods of forming sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Jul 5, 2005·20 cites·19 claims
- 3180US6881650B2Method for forming SOI substrateSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 19, 2005·29 cites·19 claims
- 3280US6881621B2Method of fabricating SOI substrate having an etch stop layer, and method of fabricating SOI integrated circuit using the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Apr 19, 2005·19 cites·24 claims
- 3380US6815320B2Method for fabricating semiconductor device including gate spacerSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Nov 9, 2004·24 cites·27 claims
- 3479US6716689B2MOS transistor having a T-shaped gate electrode and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2002·Granted Apr 6, 2004·20 cites·19 claims
- 3578US8207033B2Methods of fabricating different thickness silicon-germanium layers on semiconductor integrated circuit devices and semiconductor integrated circuit devices fabricated therebyKIM MYUNG-SUN·Filed 2009·Granted Jun 26, 2012·5 cites·21 claims
- 3678US7714394B2CMOS semiconductor devices having elevated source and drain regions and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted May 11, 2010·6 cites·23 claims
- 3778US6696328B2CMOS gate electrode using selective growth and a fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Feb 24, 2004·24 cites·38 claims
- 3877US10074572B2Integrated circuit devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 11, 2018·2 cites·13 claims
- 3977US9412693B2Semiconductor device having jumper pattern and blocking patternSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Aug 9, 2016·4 cites·20 claims
- 4076US7981750B2Methods of fabrication of channel-stressed semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 19, 2011·6 cites·23 claims
- 4174US6794306B2Semiconductor device having gate all around type transistor and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2003·Granted Sep 21, 2004·16 cites·7 claims
- 4272US7619285B2Method of fabricating CMOS transistor and CMOS transistor fabricated therebySAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Nov 17, 2009·4 cites·7 claims
- 4372US7439596B2Transistors for semiconductor device and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Oct 21, 2008·5 cites·9 claims
- 4472US7365010B2Semiconductor device having carbon-containing metal silicide layer and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Apr 29, 2008·5 cites·28 claims
- 4567US10622265B2Method of detecting failure of a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Apr 14, 2020·1 cites·20 claims
- 4667US9496192B2Test pattern of semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Nov 15, 2016·2 cites·17 claims
- 4766US8232613B2Germanium silicide layer including vanadium, platinum, and nickelMOON CHANG-WOOK·Filed 2010·Granted Jul 31, 2012·2 cites·7 claims
- 4866US7879668B2Method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Feb 1, 2011·2 cites·20 claims
- 4966US7776723B2Method of manufacturing an epitaxial semiconductor substrate and method of manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Aug 17, 2010·2 cites·29 claims
- 5066US7582535B2Method of forming MOS transistor having fully silicided metal gate electrodeSAMSUNG ELECTRONICS CO LTD·Filed 2005·Granted Sep 1, 2009·3 cites·15 claims
Showing the top 50 of 94 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Hwa-Sung Rhee files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →