Inventor · disambiguated record
Aryadeep Mrinal
Also filed as: MRINAL ARYADEEP
7 granted patents·3 pending applications·5 citations·filing 2016–2025
75Inventor score
Top patents by PatentIndex Score
10 records- 0179US12199153B2High voltage edge termination structure for power semiconductor devicesTAIWAN SEMICONDUCTOR CO LTD·Filed 2022·Granted Jan 14, 2025·0 cites·5 claims
- 0279US12154955B2High voltage edge termination structure for power semiconductor devices and manufacturing method thereofTAIWAN SEMICONDUCTOR CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·4 claims
- 0379US12087831B2High voltage edge termination structure for power semiconductor devices and manufacturing method thereofTAIWAN SEMICONDUCTOR CO LTD·Filed 2022·Granted Sep 10, 2024·0 cites·10 claims
- 0472US9799742B1Field effect transistor having electrode coated sequentially by oxide layer and nitride layer and method for manufacturing the sameTAIWAN SEMICONDUCTOR CO LTD·Filed 2016·Granted Oct 24, 2017·2 cites·5 claims
- 0571US9741825B1Method for manufacturing field effect transistor having widened trenchTAIWAN SEMICONDUCTOR CO LTD·Filed 2016·Granted Aug 22, 2017·2 cites·10 claims
- 0667US2022157951A1High voltage edge termination structure for power semicondcutor devices and manufacturing method thereofYILMAZ HAMZA·Filed 2020·Application pending·0 cites
- 0762US9905690B1Field effect transistor having a multi-width electrode structure and method for manufacturing the sameTAIWAN SEMICONDUCTOR CO LTD·Filed 2016·Granted Feb 27, 2018·1 cites·8 claims
- 0850US2025374636A1Flat contact trench mosfet and manufacturing method thereofNexperia BV·Filed 2025·Application pending·0 cites
- 0948US9960244B2Field effect transistor having electrode coated sequentially by oxide layer and nitride layer and method for manufacturing the sameTAIWAN SEMICONDUCTOR CO LTD·Filed 2017·Granted May 1, 2018·0 cites·3 claims
- 1047US2024162334A1Method of manufacturing method a semiconductor device, a semiconductor device manufactured using this method and a mosfet device manufactured according to the methodNexperia BV·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →