Inventor · disambiguated record
Peizhen Hong
Also filed as: HONG PEIZHEN
9 granted patents·3 pending applications·23 citations·filing 2012–2025
85Inventor score
Top patents by PatentIndex Score
12 records- 0196US11222903B2Word line structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Jan 11, 2022·4 cites·20 claims
- 0295US11903195B2Openings layout of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Feb 13, 2024·2 cites·19 claims
- 0393US10804283B2Openings layout of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted Oct 13, 2020·8 cites·6 claims
- 0490US11574919B2Openings layout of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2020·Granted Feb 7, 2023·2 cites·17 claims
- 0589US10651192B2Word line structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2018·Granted May 12, 2020·4 cites·16 claims
- 0684US12232320B2Word line structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Feb 18, 2025·0 cites·18 claims
- 0783US12356616B2Openings layout of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2023·Granted Jul 8, 2025·0 cites·20 claims
- 0883US2025294742A1Openings layout of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 0977US11792989B2Word line structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2021·Granted Oct 17, 2023·0 cites·18 claims
- 1077US2025176182A1Word line structure of three-dimensional memory deviceYANGTZE MEMORY TECH CO LTD·Filed 2025·Application pending·0 cites
- 1174US9006057B2Method of manufacturing semiconductor deviceQIN CHANGLIANG·Filed 2012·Granted Apr 14, 2015·3 cites·7 claims
- 1241US2019013326A1Composite substrate of three-dimensional memory devicesYANGTZE MEMORY TECH CO LTD·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →