Inventor · disambiguated record
Yinyin Lin
Also filed as: LIN YINYIN
10 granted patents·5 pending applications·16 citations·filing 2011–2018
82Inventor score
Top patents by PatentIndex Score
15 records- 0184US10223273B2Memory access method, storage-class memory, and computer systemHUAWEI TECH CO LTD·Filed 2017·Granted Mar 5, 2019·5 cites·17 claims
- 0271US9019741B2One-time programmable memory cell, memory and manufacturing method thereofLIN YINYIN·Filed 2011·Granted Apr 28, 2015·4 cites·17 claims
- 0366US9653099B2Information storage apparatus and methodHUAWEI TECH CO LTD·Filed 2016·Granted May 16, 2017·2 cites·14 claims
- 0463US9824739B2Magnetic storage apparatus and information storage method using sameHUAWEI TECH CO LTD·Filed 2017·Granted Nov 21, 2017·2 cites·10 claims
- 0560US8692224B2High consistency resistive memory and manufacturing method thereofLIN YINYIN·Filed 2011·Granted Apr 8, 2014·2 cites·12 claims
- 0652US9653178B2Magnetic track storage unit, memory, and method for controlling magnetic track storage unitHUAWEI TECH CO LTD·Filed 2016·Granted May 16, 2017·1 cites·14 claims
- 0747US10430096B2Hybrid storage device, computer, control device, and power consumption reduction methodHUAWEI TECH CO LTD·Filed 2018·Granted Oct 1, 2019·0 cites·27 claims
- 0842US10976800B2Electronic device capable of reducing power consumption and method for reducing power consumption of electronic deviceHUAWEI TECH CO LTD·Filed 2018·Granted Apr 13, 2021·0 cites·11 claims
- 0941US2014103281A1Resistive Memory Based on TaOx Containing Ru Doping and Method of Preparing the SameLIN YINYIN·Filed 2011·Application pending·0 cites
- 1035US2017018306A1Resistive Random Access Memory And Writing Operation Method ThereofUNIV FUDAN·Filed 2014·Application pending·0 cites
- 1133US9740418B2Storage unit, memory, and method for controlling storage unitHUAWEI TECH CO LTD·Filed 2016·Granted Aug 22, 2017·0 cites·12 claims
- 1232US9741418B2Write apparatus and magnetic memoryHUAWEI TECH CO LTD·Filed 2016·Granted Aug 22, 2017·0 cites·19 claims
- 1332US2014113428A1Method for Integrating MnOz Based Resistive Memory with Copper Interconnection Back-End ProcessLIN YINYIN·Filed 2011·Application pending·0 cites
- 1430US2017133072A1Magnetic Storage Track and Magnetic MemoryHUAWEI TECH CO LTD·Filed 2017·Application pending·0 cites
- 1529US2017256314A1Resistive random access memory and write operation method thereofUNIV FUDAN·Filed 2015·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Yinyin Lin files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →