Inventor · disambiguated record
Simone Lavanga
Also filed as: LAVANGA SIMONE
12 granted patents·1 pending application·25 citations·filing 2006–2025
84Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG8INFINEON TECHNOLOGIES AG2INFINEON TECHNOLOGIES AUSTRIA2LANZIERI CLAUDIO1
Top patents by PatentIndex Score
13 records- 0181US8120066B2Single voltage supply pseudomorphic high electron mobility transistor (PHEMT) power device and process for manufacturing the sameLANZIERI CLAUDIO·Filed 2006·Granted Feb 21, 2012·20 cites·35 claims
- 0265US8952421B2RF power HEMT grown on a silicon or SiC substrate with a front-side plug connectionINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Feb 10, 2015·2 cites·20 claims
- 0365US8900985B2Self-doped ohmic contacts for compound semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Dec 2, 2014·2 cites·20 claims
- 0464US9564524B2Semiconductor device and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 7, 2017·1 cites·17 claims
- 0563US2025176206A1Type iii-v semiconductor device with structured passivationINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2025·Application pending·0 cites
- 0662US12230700B2Type III-V semiconductor device with structured passivationINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Granted Feb 18, 2025·0 cites·12 claims
- 0759US10403724B2Semiconductor waferINFINEON TECHNOLOGIES AG·Filed 2018·Granted Sep 3, 2019·0 cites·15 claims
- 0853US10074721B2Method of fabricating a semiconductor wafer that includes producing a planarised surface having both a mesa surface and an insulating layer surfaceINFINEON TECHNOLOGIES AG·Filed 2016·Granted Sep 11, 2018·0 cites·13 claims
- 0951US9825139B2Semiconductor device and methodINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Nov 21, 2017·0 cites·20 claims
- 1046US10403496B2Compound semiconductor substrate and method of forming a compound semiconductor substrateINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Sep 3, 2019·0 cites·15 claims
- 1144US9779935B1Semiconductor substrate with stress relief regionsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Oct 3, 2017·0 cites·15 claims
- 1235US10204995B2Normally off HEMT with self aligned gate structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Feb 12, 2019·0 cites·17 claims
- 1331US9922936B1Semiconductor lithography alignment feature with epitaxy blockerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Mar 20, 2018·0 cites·17 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →