Inventor · disambiguated record
Jeffrey F. Roeder
Also filed as: ROEDER JEFFREY · ROEDER JEFFREY F · ROEDER JEFFREY FREDERICK
100 granted patents·29 pending applications·4,267 citations·filing 1992–2022
99Inventor score
Top patents by PatentIndex Score
129 records- 0198US9337054B2Precursors for silicon dioxide gap fillHUNKS WILLIAM·Filed 2008·Granted May 10, 2016·443 cites·20 claims
- 0298US7838329B2Antimony and germanium complexes useful for CVD/ALD of metal thin filmsADVANCED TECH MATERIALS·Filed 2007·Granted Nov 23, 2010·55 cites·21 claims
- 0398US7475588B2Apparatus and process for sensing fluoro species in semiconductor processing systemsADVANCED TECH MATERIALS·Filed 2005·Granted Jan 13, 2009·474 cites·64 claims
- 0498US7296460B2Apparatus and process for sensing fluoro species in semiconductor processing systemsADVANCED TECH MATERIALS·Filed 2005·Granted Nov 20, 2007·481 cites·23 claims
- 0598US7080545B2Apparatus and process for sensing fluoro species in semiconductor processing systemsADVANCED TECH MATERIALS·Filed 2002·Granted Jul 25, 2006·495 cites·81 claims
- 0697US9537095B2Tellurium compounds useful for deposition of tellurium containing materialsENTEGRIS INC·Filed 2014·Granted Jan 3, 2017·14 cites·20 claims
- 0796US8796068B2Tellurium compounds useful for deposition of tellurium containing materialsADVANCED TECH MATERIALS·Filed 2013·Granted Aug 5, 2014·12 cites·10 claims
- 0896US7910765B2Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitrideADVANCED TECH MATERIALS·Filed 2010·Granted Mar 22, 2011·19 cites·20 claims
- 0996US7887883B2Composition and method for low temperature deposition of silicon-containing filmsADVANCED TECH MATERIALS·Filed 2010·Granted Feb 15, 2011·23 cites·8 claims
- 1096US7786320B2Composition and method for low temperature deposition of silicon-containing films such as films including silicon, silicon nitride, silicon dioxide and/or silicon-oxynitrideADVANCED TECH MATERIALS·Filed 2009·Granted Aug 31, 2010·29 cites·7 claims
- 1196US7713346B2Composition and method for low temperature deposition of silicon-containing filmsADVANCED TECH MATERIALS·Filed 2008·Granted May 11, 2010·31 cites·8 claims
- 1295US8802882B2Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride filmsWANG ZIYUN·Filed 2010·Granted Aug 12, 2014·15 cites·20 claims
- 1395US8008117B2Antimony and germanium complexes useful for CVD/ALD of metal thin filmsADVANCED TECH MATERIALS·Filed 2010·Granted Aug 30, 2011·14 cites·20 claims
- 1495US7361603B2Passivative chemical mechanical polishing composition for copper film planarizationADVANCED TECH MATERIALS·Filed 2005·Granted Apr 22, 2008·25 cites·40 claims
- 1595US7005392B2Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using sameADVANCED TECH MATERIALS·Filed 2001·Granted Feb 28, 2006·71 cites·9 claims
- 1695US6869638B2Source reagent compositions for CVD formation of gate dielectric thin films using amide precursors and method of using sameADVANCED TEHNOLOGY MATERIALS I·Filed 2001·Granted Mar 22, 2005·108 cites·46 claims
- 1795US5719417AFerroelectric integrated circuit structureADVANCED TECH MATERIALS·Filed 1996·Granted Feb 17, 1998·154 cites·9 claims
- 1894US8236097B2Composition and method for low temperature deposition of silicon-containing filmsWANG ZIYUN·Filed 2011·Granted Aug 7, 2012·13 cites·5 claims
- 1994US7531679B2Composition and method for low temperature deposition of silicon-containing films such as films including silicon nitride, silicon dioxide and/or silicon-oxynitrideADVANCED TECH MATERIALS·Filed 2002·Granted May 12, 2009·55 cites·22 claims
- 2094US7285308B2Chemical vapor deposition of high conductivity, adherent thin films of rutheniumADVANCED TECH MATERIALS·Filed 2004·Granted Oct 23, 2007·45 cites·79 claims
- 2193US9102693B2Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride filmsENTEGRIS INC·Filed 2014·Granted Aug 11, 2015·8 cites·20 claims
- 2293US8877549B2Low temperature deposition of phase change memory materialsADVANCED TECH MATERIALS·Filed 2014·Granted Nov 4, 2014·7 cites·19 claims
- 2393US8288198B2Low temperature deposition of phase change memory materialsROEDER JEFFREY F·Filed 2007·Granted Oct 16, 2012·11 cites·18 claims
- 2493US8268665B2Antimony and germanium complexes useful for CVD/ALD of metal thin filmsHUNKS WILLIAM·Filed 2011·Granted Sep 18, 2012·12 cites·20 claims
- 2593US7781605B2Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride filmsADVANCED TECH MATERIALS·Filed 2009·Granted Aug 24, 2010·14 cites·20 claims
- 2693US6277436B1Liquid delivery MOCVD process for deposition of high frequency dielectric materialsADVANCED TECH MATERIALS·Filed 1998·Granted Aug 21, 2001·147 cites·26 claims
- 2793US5876503AMultiple vaporizer reagent supply system for chemical vapor deposition utilizing dissimilar precursor compositionsADVANCED TECH MATERIALS·Filed 1996·Granted Mar 2, 1999·117 cites·10 claims
- 2893US5503286AElectroplated solder terminalIBM·Filed 1994·Granted Apr 2, 1996·131 cites·16 claims
- 2992US8709863B2Antimony and germanium complexes useful for CVD/ALD of metal thin filmsADVANCED TECH MATERIALS·Filed 2012·Granted Apr 29, 2014·9 cites·22 claims
- 3091US5629564AElectroplated solder terminalIBM·Filed 1995·Granted May 13, 1997·111 cites·21 claims
- 3190US8236695B2Method of passivating chemical mechanical polishing compositions for copper film planarization processesLIU JUN·Filed 2008·Granted Aug 7, 2012·11 cites·20 claims
- 3290US6316797B1Scalable lead zirconium titanate(PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film materialADVANCED TECH MATERIALS·Filed 1999·Granted Nov 13, 2001·67 cites·37 claims
- 3389US8330136B2High concentration nitrogen-containing germanium telluride based memory devices and processes of makingZHENG JUN-FEI·Filed 2009·Granted Dec 11, 2012·9 cites·20 claims
- 3489US7446217B2Composition and method for low temperature deposition of silicon-containing filmsADVANCED TECH MATERIALS·Filed 2003·Granted Nov 4, 2008·29 cites·31 claims
- 3589US7344589B2Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film materialADVANCED TECH MATERIALS·Filed 2006·Granted Mar 18, 2008·9 cites·13 claims
- 3689US6514835B1Stress control of thin films by mechanical deformation of wafer substrateADVANCED TECH MATERIALS·Filed 2000·Granted Feb 4, 2003·41 cites·20 claims
- 3788US8093140B2Amorphous Ge/Te deposition processCHEN PHILIP S H·Filed 2008·Granted Jan 10, 2012·11 cites·20 claims
- 3888US7638074B2Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric filmsADVANCED TECH MATERIALS·Filed 2007·Granted Dec 29, 2009·9 cites·19 claims
- 3988US5268072AEtching processes for avoiding edge stress in semiconductor chip solder bumpsIBM·Filed 1992·Granted Dec 7, 1993·119 cites·14 claims
- 4087US6599447B2Zirconium-doped BST materials and MOCVD process forming sameADVANCED TECH MATERIALS·Filed 2000·Granted Jul 29, 2003·36 cites·35 claims
- 4187US6284654B1Chemical vapor deposition process for fabrication of hybrid electrodesADVANCED TECH MATERIALS·Filed 1998·Granted Sep 4, 2001·74 cites·22 claims
- 4286US8206784B2Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric filmsXU CHONGYING·Filed 2009·Granted Jun 26, 2012·8 cites·23 claims
- 4386US7705382B2Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film materialADVANCED TECH MATERIALS·Filed 2007·Granted Apr 27, 2010·6 cites·25 claims
- 4485US8034407B2Chemical vapor deposition of high conductivity, adherent thin films of rutheniumADVANCED TECH MATERIALS·Filed 2007·Granted Oct 11, 2011·4 cites·16 claims
- 4585US6623656B2Source reagent composition for CVD formation of Zr/Hf doped gate dielectric and high dielectric constant metal oxide thin films and method of using sameADVANCED TECH MATERIALS·Filed 2001·Granted Sep 23, 2003·28 cites·45 claims
- 4684US6900498B2Barrier structures for integration of high K oxides with Cu and Al electrodesADVANCED TECH MATERIALS·Filed 2001·Granted May 31, 2005·36 cites·39 claims
- 4784US5998236AProcess for controlled orientation of ferroelectric layersADVANCED TECH MATERIALS·Filed 1998·Granted Dec 7, 1999·59 cites·12 claims
- 4883US9534285B2Precursor compositions for atomic layer deposition and chemical vapor deposition of titanate, lanthanate, and tantalate dielectric filmsENTEGRIS INC·Filed 2014·Granted Jan 3, 2017·3 cites·13 claims
- 4982US7862857B2Scalable lead zirconium titanate (PZT) thin film material and deposition method, and ferroelectric memory device structures comprising such thin film materialADVANCED TECH MATERIALS·Filed 2010·Granted Jan 4, 2011·3 cites·20 claims
- 5082US7601860B2Composition and method for low temperature chemical vapor deposition of silicon-containing films including silicon carbonitride and silicon oxycarbonitride filmsADVANCED TECH MATERIALS·Filed 2004·Granted Oct 13, 2009·17 cites·2 claims
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