Inventor · disambiguated record
Po-Ruwe Tzng
Also filed as: TZNG PO-RUWE
4 granted patents·183 citations·filing 2012–2017
80Inventor score
Technology areasH10P
Top patents by PatentIndex Score
4 records- 0197US9166010B2FinFET device with epitaxial structureTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Oct 20, 2015·49 cites·20 claims
- 0296US9029930B2FinFET device with epitaxial structureTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted May 12, 2015·28 cites·20 claims
- 0396US8703556B2Method of making a FinFET deviceKELLY ANDREW JOSEPH·Filed 2012·Granted Apr 22, 2014·106 cites·20 claims
- 0458USRE48942EFinFET device with epitaxial structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 22, 2022·0 cites·31 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →