Inventor · disambiguated record
Tze Wing Poon
Also filed as: POON TZE · POON TZE W · POON TZE WING
18 granted patents·1,623 citations·filing 1998–2014
96Inventor score
Technology areasH10P
Files withAPPLIED MATERIALS INC12CHOI DONGWON1DEL AGUA BORNIQUEL JOSE IGNACIO1GANGULY UDAYAN1MOTOROLA INC1
Top patents by PatentIndex Score
18 records- 0199US6303523B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1998·Granted Oct 16, 2001·751 cites·53 claims
- 0297US6562690B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted May 13, 2003·102 cites·26 claims
- 0397US6348725B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1999·Granted Feb 19, 2002·161 cites·38 claims
- 0496US6734115B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Granted May 11, 2004·67 cites·12 claims
- 0596US6660656B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Dec 9, 2003·111 cites·11 claims
- 0696US6596655B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Jul 22, 2003·77 cites·20 claims
- 0796US6541282B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted Apr 1, 2003·80 cites·17 claims
- 0895US7560377B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2005·Granted Jul 14, 2009·19 cites·16 claims
- 0992US6869896B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2003·Granted Mar 22, 2005·37 cites·16 claims
- 1089US6093966ASemiconductor device with a copper barrier layer and formation thereofMOTOROLA INC·Filed 1998·Granted Jul 25, 2000·116 cites·31 claims
- 1187US7163896B1Biased H2 etch process in deposition-etch-deposition gap fillNOVELLUS SYSTEMS INC·Filed 2003·Granted Jan 16, 2007·58 cites·20 claims
- 1287US6930061B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2003·Granted Aug 16, 2005·32 cites·25 claims
- 1373US8642128B2Enhanced scavenging of residual fluorine radicals using silicon coating on process chamber wallsCHOI DONGWON·Filed 2010·Granted Feb 4, 2014·4 cites·17 claims
- 1469US8198671B2Modification of charge trap silicon nitride with oxygen plasmaOLSEN CHRISTOPHER SEAN·Filed 2010·Granted Jun 12, 2012·3 cites·30 claims
- 1568US8871645B2Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereofGANGULY UDAYAN·Filed 2009·Granted Oct 28, 2014·3 cites·12 claims
- 1664US7858503B2Ion implanted substrate having capping layer and methodAPPLIED MATERIALS INC·Filed 2009·Granted Dec 28, 2010·2 cites·25 claims
- 1755US9530898B2Semiconductor devices suitable for narrow pitch applications and methods of fabrication thereofAPPLIED MATERIALS INC·Filed 2014·Granted Dec 27, 2016·0 cites·8 claims
- 1839US8198180B2Ion implanted substrate having capping layer and methodDEL AGUA BORNIQUEL JOSE IGNACIO·Filed 2010·Granted Jun 12, 2012·0 cites·20 claims
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