Inventor · disambiguated record
Ralf B. Willecke
Also filed as: WILLECKE RALF · WILLECKE RALF B
18 granted patents·1 pending application·1,670 citations·filing 1998–2012
96Inventor score
Top patents by PatentIndex Score
19 records- 0199US6303523B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1998·Granted Oct 16, 2001·751 cites·53 claims
- 0297US6593247B1Method of depositing low k films using an oxidizing plasmaAPPLIED MATERIALS INC·Filed 2000·Granted Jul 15, 2003·129 cites·63 claims
- 0397US6562690B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted May 13, 2003·102 cites·26 claims
- 0497US6348725B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1999·Granted Feb 19, 2002·161 cites·38 claims
- 0596US6734115B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Granted May 11, 2004·67 cites·12 claims
- 0696US6660656B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Dec 9, 2003·111 cites·11 claims
- 0796US6596655B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Jul 22, 2003·77 cites·20 claims
- 0896US6541282B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted Apr 1, 2003·80 cites·17 claims
- 0995US7560377B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2005·Granted Jul 14, 2009·19 cites·16 claims
- 1092US6869896B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2003·Granted Mar 22, 2005·37 cites·16 claims
- 1189US6806207B2Method of depositing low K filmsAPPLIED MATERIALS INC·Filed 2003·Granted Oct 19, 2004·34 cites·20 claims
- 1287US6930061B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2003·Granted Aug 16, 2005·32 cites·25 claims
- 1386US6632735B2Method of depositing low dielectric constant carbon doped silicon oxideAPPLIED MATERIALS INC·Filed 2001·Granted Oct 14, 2003·37 cites·13 claims
- 1485US7160821B2Method of depositing low k filmsAPPLIED MATERIALS INC·Filed 2004·Granted Jan 9, 2007·25 cites·20 claims
- 1570US8603895B1Methods of forming isolation structures for semiconductor devices by performing a deposition-etch-deposition sequenceJAKUBOWSKI FRANK·Filed 2012·Granted Dec 10, 2013·3 cites·31 claims
- 1656US6831008B2Nickel silicide—silicon nitride adhesion through surface passivationTEXAS INSTRUMENTS INC·Filed 2002·Granted Dec 14, 2004·5 cites·15 claims
- 1747US7423344B2Bi-layer etch stop process for defect reduction and via stress migration improvementTEXAS INSTRUMENTS INC·Filed 2007·Granted Sep 9, 2008·0 cites·5 claims
- 1840US2005090087A1Nickel silicide - silicon nitride adhesion through surface passivationFiled 2004·Application pending·0 cites
- 1939US7199047B2Bi-layer etch stop process for defect reduction and via stress migration improvementTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 3, 2007·0 cites·9 claims
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