Inventor · disambiguated record
Wai-Fan Yau
Also filed as: YAU WAI F · YAU WAI-FAN
60 granted patents·16 pending applications·8,102 citations·filing 1996–2019
99Inventor score
Top patents by PatentIndex Score
76 records- 0199US6413583B1Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compoundAPPLIED MATERIALS INC·Filed 1999·Granted Jul 2, 2002·725 cites·6 claims
- 0299US6303523B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1998·Granted Oct 16, 2001·751 cites·53 claims
- 0399US6072227ALow power method of depositing a low k dielectric with organo silaneAPPLIED MATERIALS INC·Filed 1998·Granted Jun 6, 2000·541 cites·26 claims
- 0499US6054379AMethod of depositing a low k dielectric with organo silaneAPPLIED MATERIALS INC·Filed 1998·Granted Apr 25, 2000·609 cites·98 claims
- 0598US8187951B1CVD flowable gap fillWANG FENG·Filed 2009·Granted May 29, 2012·550 cites·12 claims
- 0698US7629227B1CVD flowable gap fillNOVELLUS SYSTEMS INC·Filed 2007·Granted Dec 8, 2009·78 cites·23 claims
- 0798US7482247B1Conformal nanolaminate dielectric deposition and etch bag gap fill processNOVELLUS SYSTEMS INC·Filed 2006·Granted Jan 27, 2009·583 cites·27 claims
- 0898US6627532B1Method of decreasing the K value in SiOC layer deposited by chemical vapor depositionAPPLIED MATERIALS INC·Filed 2000·Granted Sep 30, 2003·358 cites·27 claims
- 0998US6340435B1Integrated low K dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 1999·Granted Jan 22, 2002·536 cites·14 claims
- 1097US6858153B2Integrated low K dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 2001·Granted Feb 22, 2005·256 cites·21 claims
- 1197US6593247B1Method of depositing low k films using an oxidizing plasmaAPPLIED MATERIALS INC·Filed 2000·Granted Jul 15, 2003·129 cites·63 claims
- 1297US6562690B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted May 13, 2003·102 cites·26 claims
- 1397US6448187B2Method of improving moisture resistance of low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Sep 10, 2002·98 cites·30 claims
- 1497US6348725B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1999·Granted Feb 19, 2002·161 cites·38 claims
- 1597US6171945B1CVD nanoporous silica low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1998·Granted Jan 9, 2001·317 cites·43 claims
- 1696US7888273B1Density gradient-free gap fillNOVELLUS SYSTEMS INC·Filed 2007·Granted Feb 15, 2011·45 cites·18 claims
- 1796US6734115B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Granted May 11, 2004·67 cites·12 claims
- 1896US6730593B2Method of depositing a low K dielectric with organo silaneAPPLIED MATERIALS INC·Filed 2001·Granted May 4, 2004·60 cites·10 claims
- 1996US6660656B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Dec 9, 2003·111 cites·11 claims
- 2096US6596655B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2001·Granted Jul 22, 2003·77 cites·20 claims
- 2196US6541282B1Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted Apr 1, 2003·80 cites·17 claims
- 2296US6537929B1CVD plasma assisted low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2000·Granted Mar 25, 2003·118 cites·34 claims
- 2396US6511909B1Method of depositing a low K dielectric with organo silaneAPPLIED MATERIALS INC·Filed 1999·Granted Jan 28, 2003·100 cites·20 claims
- 2496US6287990B1CVD plasma assisted low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1998·Granted Sep 11, 2001·233 cites·70 claims
- 2596US6245690B1Method of improving moisture resistance of low dielectric constant filmsAPPLIED MATERIALS INC·Filed 1998·Granted Jun 12, 2001·132 cites·20 claims
- 2695US7560377B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2005·Granted Jul 14, 2009·19 cites·16 claims
- 2795US6511903B1Method of depositing a low k dielectric with organo silaneAPPLIED MATERIALS INC·Filed 1999·Granted Jan 28, 2003·91 cites·61 claims
- 2894US6209484B1Method and apparatus for depositing an etch stop layerAPPLIED MATERIALS INC·Filed 2000·Granted Apr 3, 2001·74 cites·19 claims
- 2993US9257302B1CVD flowable gap fillWANG FENG·Filed 2012·Granted Feb 9, 2016·16 cites·17 claims
- 3093US7658969B2Chemical vapor deposition chamber with dual frequency bias and method for manufacturing a photomask using the sameAPPLIED MATERIALS INC·Filed 2006·Granted Feb 9, 2010·19 cites·9 claims
- 3193US7651725B2Low dielectric constant film produced from silicon compounds comprising silicon-carbon bondAPPLIED MATERIALS INC·Filed 2007·Granted Jan 26, 2010·7 cites·6 claims
- 3293US6770556B2Method of depositing a low dielectric with organo silaneAPPLIED MATERIALS INC·Filed 2002·Granted Aug 3, 2004·29 cites·34 claims
- 3393US6743737B2Method of improving moisture resistance of low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Granted Jun 1, 2004·39 cites·29 claims
- 3493US6669858B2Integrated low k dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 2001·Granted Dec 30, 2003·47 cites·14 claims
- 3593US6660663B1Computer readable medium for holding a program for performing plasma-assisted CVD of low dielectric constant films formed from organosilane compoundsAPPLIED MATERIALS INC·Filed 2000·Granted Dec 9, 2003·62 cites·22 claims
- 3692US7023092B2Low dielectric constant film produced from silicon compounds comprising silicon-carbon bondsAPPLIED MATERIALS INC·Filed 2004·Granted Apr 4, 2006·25 cites·12 claims
- 3792US6869896B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2003·Granted Mar 22, 2005·37 cites·16 claims
- 3892US6800571B2CVD plasma assisted low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2002·Granted Oct 5, 2004·54 cites·12 claims
- 3992US5968324AMethod and apparatus for depositing antireflective coatingAPPLIED MATERIALS INC·Filed 1996·Granted Oct 19, 1999·85 cites·37 claims
- 4091US6784119B2Method of decreasing the K value in SIOC layer deposited by chemical vapor depositionAPPLIED MATERIALS INC·Filed 2003·Granted Aug 31, 2004·36 cites·20 claims
- 4189US7227244B2Integrated low k dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 2004·Granted Jun 5, 2007·27 cites·8 claims
- 4289US6806207B2Method of depositing low K filmsAPPLIED MATERIALS INC·Filed 2003·Granted Oct 19, 2004·34 cites·20 claims
- 4388US6324439B1Method and apparatus for applying films using reduced deposition ratesAPPLIED MATERIALS INC·Filed 2000·Granted Nov 27, 2001·37 cites·22 claims
- 4488US6035803AMethod and apparatus for controlling the deposition of a fluorinated carbon filmAPPLIED MATERIALS INC·Filed 1997·Granted Mar 14, 2000·94 cites·26 claims
- 4587US7205249B2CVD plasma assisted low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2004·Granted Apr 17, 2007·32 cites·7 claims
- 4687US6930061B2Plasma processes for depositing low dielectric constant filmsAPPLIED MATERIALS INC·Filed 2003·Granted Aug 16, 2005·32 cites·25 claims
- 4787US6083852AMethod for applying films using reduced deposition ratesAPPLIED MATERIALS INC·Filed 1997·Granted Jul 4, 2000·69 cites·19 claims
- 4886US6632735B2Method of depositing low dielectric constant carbon doped silicon oxideAPPLIED MATERIALS INC·Filed 2001·Granted Oct 14, 2003·37 cites·13 claims
- 4985US7160821B2Method of depositing low k filmsAPPLIED MATERIALS INC·Filed 2004·Granted Jan 9, 2007·25 cites·20 claims
- 5084US6156149AIn situ deposition of a dielectric oxide layer and anti-reflective coatingAPPLIED MATERIALS INC·Filed 1997·Granted Dec 5, 2000·71 cites·19 claims
Showing the top 50 of 76 patent records by PatentIndex Score.
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