Inventor · disambiguated record
Yasushi Miyasaka
Also filed as: MIYASAKA YASUSHI
16 granted patents·544 citations·filing 1997–2013
95Inventor score
Technology areasH10D
Top patents by PatentIndex Score
16 records- 0196US6291856B1Semiconductor device with alternating conductivity type layer and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 1999·Granted Sep 18, 2001·214 cites·6 claims
- 0293US7507023B2Temperature measurement device of power semiconductor deviceFUJI ELEC DEVICE TECH CO LTD·Filed 2006·Granted Mar 24, 2009·32 cites·10 claims
- 0390US6673679B1Semiconductor device with alternating conductivity type layer and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2000·Granted Jan 6, 2004·50 cites·9 claims
- 0488US6677626B1Semiconductor device with alternating conductivity type layer and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 1999·Granted Jan 13, 2004·90 cites·19 claims
- 0588US6175143B1Schottky barrierFUJI ELECTRIC CO LTD·Filed 1998·Granted Jan 16, 2001·47 cites·2 claims
- 0683US7276771B2Diode and method for manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2006·Granted Oct 2, 2007·6 cites·1 claims
- 0782US7112865B2Diode and method for manufacturing the sameFUJI ELECTRIC HOLDINGS·Filed 2005·Granted Sep 26, 2006·6 cites·2 claims
- 0879US6221688B1Diode and method for manufacturing the sameFUJI ELECTRIC CO LTD·Filed 1999·Granted Apr 24, 2001·27 cites·12 claims
- 0976US6177712B1Schottky barrier diode having a guard ring structureFUJI ELECTRIC CO LTD·Filed 1997·Granted Jan 23, 2001·39 cites·2 claims
- 1073US9018633B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2013·Granted Apr 28, 2015·3 cites·18 claims
- 1169US6383836B2Diode and method for manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2001·Granted May 7, 2002·9 cites·4 claims
- 1268US6975013B2Diode and method for manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2002·Granted Dec 13, 2005·8 cites·2 claims
- 1357US7282781B2Semiconductor device with a short-lifetime region and manufacturing method thereofFUJI ELEC DEVICE TECH CO LTD·Filed 2005·Granted Oct 16, 2007·1 cites·18 claims
- 1457US6787420B2Semiconductor device with alternating conductivity type layer and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2001·Granted Sep 7, 2004·7 cites·2 claims
- 1554US6815766B2Semiconductor device with alternating conductivity type layer and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2003·Granted Nov 9, 2004·5 cites·7 claims
- 1649US7187054B2Diode and method for manufacturing the sameFUJI ELECTRIC HOLDINGS·Filed 2005·Granted Mar 6, 2007·0 cites·1 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →