Inventor · disambiguated record
Huicong Hong
Also filed as: HONG HUICONG
14 granted patents·2 pending applications·896 citations·filing 2002–2019
94Inventor score
Top patents by PatentIndex Score
16 records- 0198US7642122B2Method for forming nitride crystalsMOMENTIVE PERFORMANCE MAT INC·Filed 2007·Granted Jan 5, 2010·95 cites·13 claims
- 0298US7078731B2Gallium nitride crystals and wafers and method of makingGEN ELECTRIC·Filed 2004·Granted Jul 18, 2006·270 cites·40 claims
- 0397US7704324B2Apparatus for processing materials in supercritical fluids and methods thereofGEN ELECTRIC·Filed 2005·Granted Apr 27, 2010·97 cites·31 claims
- 0497US7582498B2Resonant cavity light emitting devices and associated methodMOMENTIVE PERFORMANCE MAT INC·Filed 2005·Granted Sep 1, 2009·69 cites·32 claims
- 0597US7368015B2Apparatus for producing single crystal and quasi-single crystal, and associated methodMOMENTIVE PERFORMANCE MAT INC·Filed 2005·Granted May 6, 2008·134 cites·33 claims
- 0694US7786503B2Gallium nitride crystals and wafers and method of makingMOMENTIVE PERFORMANCE MAT INC·Filed 2006·Granted Aug 31, 2010·13 cites·35 claims
- 0793US7098487B2Gallium nitride crystal and method of making sameGEN ELECTRIC·Filed 2002·Granted Aug 29, 2006·100 cites·18 claims
- 0892US7009215B2Group III-nitride based resonant cavity light emitting devices fabricated on single crystal gallium nitride substratesGEN ELECTRIC·Filed 2003·Granted Mar 7, 2006·99 cites·29 claims
- 0987US10975492B2Method of forming a GaN single crystal comprising disposing a nucleation center in a first region, a GaN source material in a second region, and establishing a temperature distributionSORAA INC·Filed 2019·Granted Apr 13, 2021·1 cites·21 claims
- 1082US9279193B2Method of making a gallium nitride crystalline composition having a low dislocation densityD EVELYN MARK PHILIP·Filed 2006·Granted Mar 8, 2016·4 cites·7 claims
- 1178US7859008B2Crystalline composition, wafer, device, and associated methodMOMENTIVE PERFORMANCE MAT INC·Filed 2007·Granted Dec 28, 2010·9 cites·37 claims
- 1273US7638815B2Crystalline composition, wafer, and semi-conductor structureMOMENTIVE PERFORMANCE MAT INC·Filed 2007·Granted Dec 29, 2009·5 cites·31 claims
- 1369US10208396B2Crystalline gallium nitride containing flourineSORAA INC·Filed 2016·Granted Feb 19, 2019·0 cites·20 claims
- 1456US8357945B2Gallium nitride crystal and method of making sameMOMENTIVE PERFORMANCE MAT INC·Filed 2006·Granted Jan 22, 2013·0 cites·18 claims
- 1542US2006169996A1Crystalline composition, wafer, and semi-conductor structureGEN ELECTRIC·Filed 2006·Application pending·0 cites
- 1642US2007040181A1Crystalline composition, wafer, and semi-conductor structureGEN ELECTRIC·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →