Inventor · disambiguated record
John H. Tregilgas
Also filed as: TREGILGAS JOHN H · TREGILGAS JOHN HAROLD
22 granted patents·713 citations·filing 1982–2005
96Inventor score
Top patents by PatentIndex Score
22 records- 0198US5552924AMicromechanical device having an improved beamTEXAS INSTRUMENTS INC·Filed 1994·Granted Sep 3, 1996·285 cites·31 claims
- 0295US5696619AMicromechanical device having an improved beamTEXAS INSTRUMENTS INC·Filed 1995·Granted Dec 9, 1997·193 cites·12 claims
- 0388US6777681B1Infrared detector with amorphous silicon detector elements, and a method of making itRAYTHEON CO·Filed 2001·Granted Aug 17, 2004·52 cites·38 claims
- 0477US5942054AMicromechanical device with reduced load relaxationTEXAS INSTRUMENTS INC·Filed 1996·Granted Aug 24, 1999·29 cites·5 claims
- 0569US7528061B2Systems and methods for solder bondingL 3 COMM CORP·Filed 2005·Granted May 5, 2009·4 cites·31 claims
- 0658US4504334AGettering method for mercury cadmium tellurideTEXAS INSTRUMENTS INC·Filed 1983·Granted Mar 12, 1985·21 cites·6 claims
- 0754US4588446AMethod for producing graded band gap mercury cadmium tellurideTEXAS INSTRUMENTS INC·Filed 1985·Granted May 13, 1986·11 cites·8 claims
- 0849US6143630AMethod of impurity getteringTEXAS INSTRUMENTS INC·Filed 1994·Granted Nov 7, 2000·18 cites·11 claims
- 0949US5861321AMethod for doping epitaxial layers using doped substrate materialTEXAS INSTRUMENTS INC·Filed 1996·Granted Jan 19, 1999·18 cites·5 claims
- 1049US5599733AMethod using cadmium-rich CdTe for lowering the metal vacancy concentrations of HgCdTe surfacesTEXAS INSTRUMENTS INC·Filed 1994·Granted Feb 4, 1997·18 cites·15 claims
- 1147US4481044AHigh-temperature Hg anneal for HgCdTeTEXAS INSTRUMENTS INC·Filed 1984·Granted Nov 6, 1984·14 cites·5 claims
- 1240US4501625AMethod of producing homogeneously doped HgCdTe which contains a fast diffusing dopant impurityTEXAS INSTRUMENTS INC·Filed 1983·Granted Feb 26, 1985·4 cites·16 claims
- 1339US4507160AImpurity reduction technique for mercury cadmium tellurideTEXAS INSTRUMENTS INC·Filed 1983·Granted Mar 26, 1985·9 cites·24 claims
- 1438US6114738AIntrinsic p-type HgCdTe using CdTe capping layerDRS FPA L P·Filed 1999·Granted Sep 5, 2000·6 cites·6 claims
- 1538US5804463ANoble metal diffusion doping of mercury cadmium telluride for use in infrared detectorsRAYTHEON TI SYST INC·Filed 1996·Granted Sep 8, 1998·8 cites·9 claims
- 1637US6030853AMethod of producing intrinsic p-type HgCdTe using CdTe capping layerDRS FPA L P·Filed 1993·Granted Feb 29, 2000·8 cites·12 claims
- 1737US4675087ASemiconductor purification by solid state electromigrationTEXAS INSTRUMENTS INC·Filed 1984·Granted Jun 23, 1987·2 cites·20 claims
- 1834US5028296AAnnealing methodTEXAS INSTRUMENTS INC·Filed 1989·Granted Jul 2, 1991·5 cites·17 claims
- 1934US4462959AHgCdTe Bulk doping techniqueTEXAS INSTRUMENTS INC·Filed 1982·Granted Jul 31, 1984·5 cites·18 claims
- 2029US4684415ACore annihilation method of Hg1-x Cdx TeTEXAS INSTRUMENTS INC·Filed 1985·Granted Aug 4, 1987·0 cites·20 claims
- 2128US5079192AMethod of preventing dislocation multiplication of bulk HgCdTe and LPE films during low temperature anneal in Hg vaporTEXAS INSTRUMENTS INC·Filed 1990·Granted Jan 7, 1992·1 cites·16 claims
- 2226US5259900AReflux annealing device and methodTEXAS INSTRUMENTS INC·Filed 1990·Granted Nov 9, 1993·2 cites·15 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →