Inventor · disambiguated record
Frederick N. Hause
Also filed as: HAUSE FREDERICK N
110 granted patents·6 pending applications·4,016 citations·filing 1984–2006
99Inventor score
Top patents by PatentIndex Score
116 records- 0199US6111260AMethod and apparatus for in situ anneal during ion implantADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 29, 2000·305 cites·19 claims
- 0297US6274894B1Low-bandgap source and drain formation for short-channel MOS transistorsADVANCED MICRO DEVICES INC·Filed 1999·Granted Aug 14, 2001·205 cites·18 claims
- 0393US6060345AMethod of making NMOS and PMOS devices with reduced masking stepsADVANCED MICRO DEVICES INC·Filed 1997·Granted May 9, 2000·114 cites·22 claims
- 0493US5888880ATrench transistor with localized source/drain regions implanted through selectively grown oxide layerADVANCED MICRO DEVICES INC·Filed 1996·Granted Mar 30, 1999·113 cites·43 claims
- 0592US5885877AComposite gate electrode incorporating dopant diffusion-retarding barrier layer adjacent to underlying gate dielectricADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 23, 1999·107 cites·27 claims
- 0690US6255703B1Device with lower LDD resistanceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jul 3, 2001·69 cites·20 claims
- 0790US6084280ATransistor having a metal silicide self-aligned to the gateADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 4, 2000·82 cites·41 claims
- 0890US5918129AMethod of channel doping using diffusion from implanted polysiliconADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 29, 1999·110 cites·18 claims
- 0989US6352885B1Transistor having a peripherally increased gate insulation thickness and a method of fabricating the sameADVANCED MICRO DEVICES INC·Filed 2000·Granted Mar 5, 2002·46 cites·22 claims
- 1089US5930642ATransistor with buried insulative layer beneath the channel regionADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 27, 1999·104 cites·20 claims
- 1189US5888675AReticle that compensates for radiation-induced lens error in a photolithographic systemADVANCED MICRO DEVICES INC·Filed 1996·Granted Mar 30, 1999·68 cites·26 claims
- 1288US5710054AMethod of forming a shallow junction by diffusion from a silicon-based spacerADVANCED MICRO DEVICES INC·Filed 1996·Granted Jan 20, 1998·92 cites·57 claims
- 1387US6259142B1Multiple split gate semiconductor device and fabrication methodADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 10, 2001·67 cites·9 claims
- 1487US5840451AIndividually controllable radiation sources for providing an image pattern in a photolithographic systemADVANCED MICRO DEVICES INC·Filed 1996·Granted Nov 24, 1998·61 cites·48 claims
- 1586US6410967B1Transistor having enhanced metal silicide and a self-aligned gate electrodeADVANCED MICRO DEVICES INC·Filed 1998·Granted Jun 25, 2002·76 cites·14 claims
- 1686US6069398AThin film resistor and fabrication method thereofADVANCED MICRO DEVICES INC·Filed 1997·Granted May 30, 2000·67 cites·19 claims
- 1786US5899732AMethod of implanting silicon through a polysilicon gate for punchthrough control of a semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted May 4, 1999·83 cites·8 claims
- 1885US6226781B1Modifying a design layer of an integrated circuit using overlying and underlying design layersADVANCED MICRO DEVICES INC·Filed 1998·Granted May 1, 2001·73 cites·18 claims
- 1985US5933717AVertical transistor interconnect structure and fabrication method thereofADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 3, 1999·60 cites·37 claims
- 2085US5933721AMethod for fabricating differential threshold voltage transistor pairADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 3, 1999·64 cites·31 claims
- 2185US5930634AMethod of making an IGFET with a multilevel gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Jul 27, 1999·63 cites·48 claims
- 2284US6555479B1Method for forming openings for conductive interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 29, 2003·31 cites·48 claims
- 2384US6268637B1Method of making air gap isolation by making a lateral EPI bridge for low K isolation advanced CMOS fabricationADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 31, 2001·73 cites·21 claims
- 2484US6225151B1Nitrogen liner beneath transistor source/drain regions to retard dopant diffusionADVANCED MICRO DEVICES INC·Filed 1997·Granted May 1, 2001·68 cites·37 claims
- 2584US6201278B1Trench transistor with insulative spacersADVANCED MICRO DEVICES INC·Filed 1998·Granted Mar 13, 2001·48 cites·40 claims
- 2683US6337217B1Method and apparatus for improved focus in optical processingADVANCED MICRO DEVICES INC·Filed 2000·Granted Jan 8, 2002·35 cites·30 claims
- 2783US6080629AIon implantation into a gate electrode layer using an implant profile displacement layerADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 27, 2000·51 cites·38 claims
- 2881US6242776B1Device improvement by lowering LDD resistance with new silicide processADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 5, 2001·41 cites·14 claims
- 2981US5851891AIGFET method of forming with silicide contact on ultra-thin gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 22, 1998·42 cites·40 claims
- 3080US6166354ASystem and apparatus for in situ monitoring and control of annealing in semiconductor fabricationADVANCED MICRO DEVICES INC·Filed 1997·Granted Dec 26, 2000·37 cites·22 claims
- 3180US5874341AMethod of forming trench transistor with source contact in trenchADVANCED MICRO DEVICES INC·Filed 1996·Granted Feb 23, 1999·40 cites·30 claims
- 3279US6197645B1Method of making an IGFET with elevated source/drain regions in close proximity to gate with sloped sidewallsADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 6, 2001·44 cites·18 claims
- 3379US5937299AMethod for forming an IGFET with silicide source/drain contacts in close proximity to a gate with sloped sidewallsADVANCED MICRO DEVICES INC·Filed 1997·Granted Aug 10, 1999·44 cites·20 claims
- 3478US6252283B1CMOS transistor design for shared N+/P+ electrode with enhanced device performanceADVANCED MICRO DEVICES INC·Filed 1999·Granted Jun 26, 2001·40 cites·10 claims
- 3578US6127251ASemiconductor device with a reduced width gate dielectric and method of making sameADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 3, 2000·48 cites·24 claims
- 3676US6489240B1Method for forming copper interconnectsADVANCED MICRO DEVICES INC·Filed 2001·Granted Dec 3, 2002·23 cites·14 claims
- 3776US6426262B1Method of analyzing the effects of shadowing of angled halo implantsADVANCED MICRO DEVICES INC·Filed 2000·Granted Jul 30, 2002·18 cites·24 claims
- 3876US6087706ACompact transistor structure with adjacent trench isolation and source/drain regions implanted vertically into trench wallsADVANCED MICRO DEVICES INC·Filed 1998·Granted Jul 11, 2000·51 cites·18 claims
- 3976US5912188AMethod of forming a contact hole in an interlevel dielectric layer using dual etch stopsADVANCED MICRO DEVICES INC·Filed 1997·Granted Jun 15, 1999·49 cites·30 claims
- 4076US5801075AMethod of forming trench transistor with metal spacersADVANCED MICRO DEVICES INC·Filed 1996·Granted Sep 1, 1998·33 cites·50 claims
- 4175US6809032B1Method and apparatus for detecting the endpoint of a chemical-mechanical polishing operation using optical techniquesADVANCED MICRO DEVICES INC·Filed 2002·Granted Oct 26, 2004·18 cites·15 claims
- 4275US6140167AHigh performance MOSFET and method of forming the same using silicidation and junction implantation prior to gate formationADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 31, 2000·35 cites·19 claims
- 4373US7220655B1Method of forming an alignment mark on a wafer, and a wafer comprising sameADVANCED MICRO DEVICES INC·Filed 2001·Granted May 22, 2007·23 cites·14 claims
- 4473US6140674ABuried trench capacitorADVANCED MICRO DEVICES INC·Filed 1998·Granted Oct 31, 2000·42 cites·20 claims
- 4573US5512506ALightly doped drain profile optimization with high energy implantsADVANCED MICRO DEVICES INC·Filed 1995·Granted Apr 30, 1996·35 cites·7 claims
- 4672US6458678B1Transistor formed using a dual metal process for gate and source/drain regionADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 1, 2002·17 cites·12 claims
- 4772US6005272ATrench transistor with source contact in trenchADVANCED MICRO DEVICES INC·Filed 1998·Granted Dec 21, 1999·26 cites·31 claims
- 4872US5976956AMethod of controlling dopant concentrations using transient-enhanced diffusion prior to gate formation in a deviceADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 2, 1999·40 cites·33 claims
- 4972US5885887AMethod of making an igfet with selectively doped multilevel polysilicon gateADVANCED MICRO DEVICES INC·Filed 1997·Granted Mar 23, 1999·32 cites·35 claims
- 5071US6429052B1Method of making high performance transistor with a reduced width gate electrode and device comprising sameADVANCED MICRO DEVICES INC·Filed 2000·Granted Aug 6, 2002·16 cites·19 claims
Showing the top 50 of 116 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →