Inventor · disambiguated record
Mingjiao Liu
Also filed as: LIU MINGJIAO
26 granted patents·3 pending applications·205 citations·filing 2007–2024
96Inventor score
Files withSEMICONDUCTOR COMPONENTS IND LLC15SEMICONDUCTOR COMPONENTS IND7SALIH ALI3ETTER STEVEN M1LIU MINGJIAO1
Top patents by PatentIndex Score
29 records- 0196US7579632B2Multi-channel ESD device and method thereforSEMICONDUCTOR COMPONENTS IND·Filed 2007·Granted Aug 25, 2009·62 cites·20 claims
- 0293US7538395B2Method of forming low capacitance ESD device and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2007·Granted May 26, 2009·31 cites·7 claims
- 0389US7842969B2Low clamp voltage ESD device and method thereforSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Nov 30, 2010·16 cites·11 claims
- 0486US9972607B2Semiconductor device and method of integrating power module with interposer and opposing substratesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted May 15, 2018·5 cites·21 claims
- 0585US10727326B2Trench-gate insulated-gate bipolar transistors (IGBTs)SEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jul 28, 2020·4 cites·18 claims
- 0684US8089095B2Two terminal multi-channel ESD device and method thereforSALIH ALI·Filed 2010·Granted Jan 3, 2012·14 cites·18 claims
- 0783US10177232B2Methods for manufacturing a Schottky device with mesa regions in-between conductive trenches and having multi-concentration doping profilesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Jan 8, 2019·3 cites·18 claims
- 0882US7955941B2Method of forming an integrated semiconductor device and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Jun 7, 2011·9 cites·8 claims
- 0982US7812367B2Two terminal low capacitance multi-channel ESD deviceSEMICONDUCTOR COMPONENTS IND·Filed 2008·Granted Oct 12, 2010·18 cites·12 claims
- 1080US11233158B2Semiconductor power device and method for manufactureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Jan 25, 2022·2 cites·18 claims
- 1180US8039359B2Method of forming low capacitance ESD device and structure thereforSEMICONDUCTOR COMPONENTS IND·Filed 2009·Granted Oct 18, 2011·8 cites·12 claims
- 1279US9818677B2Semiconductor component having group III nitride semiconductor device mounted on substrate and interconnected to lead frameSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Nov 14, 2017·3 cites·17 claims
- 1377US9716151B2Schottky device having conductive trenches and a multi-concentration doping profile therebetweenSEMICONDUCTOR COMPONENTS IND LLC·Filed 2014·Granted Jul 25, 2017·3 cites·20 claims
- 1475US11056581B2Trench-gate insulated-gate bipolar transistorsSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Jul 6, 2021·2 cites·18 claims
- 1575US8188572B2Integrated semiconductor deviceETTER STEVEN M·Filed 2011·Granted May 29, 2012·5 cites·10 claims
- 1673US8236625B2Method of forming a multi-channel ESD deviceSALIH ALI·Filed 2011·Granted Aug 7, 2012·6 cites·7 claims
- 1773US2024072008A1Semiconductor device and method of integrating power module with interposer and opposing substratesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2023·Application pending·0 cites
- 1870US10438932B2Semiconductor device and method of integrating power module with interposer and opposing substratesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2018·Granted Oct 8, 2019·1 cites·20 claims
- 1970US8093133B2Transient voltage suppressor and methodsSAUCEDO-FLORES EMMANUEL·Filed 2008·Granted Jan 10, 2012·6 cites·14 claims
- 2069US8110448B2Two terminal multi-channel ESD device and method thereforSALIH ALI·Filed 2010·Granted Feb 7, 2012·5 cites·10 claims
- 2160US11670706B2Methods of manufacture for trench-gate insulated-gate bipolar transistors (IGBTs)SEMICONDUCTOR COMPONENTS IND LLC·Filed 2020·Granted Jun 6, 2023·0 cites·20 claims
- 2260US2024304603A1Semiconductor device and method of integrating power module with interposer and opposing substratesSEMICONDUCTOR COMPONENTS IND LLC·Filed 2024·Application pending·0 cites
- 2355US10930524B2Semiconductor component and method of manufactureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2019·Granted Feb 23, 2021·0 cites·20 claims
- 2453US10163764B2Semiconductor component and method of manufactureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2017·Granted Dec 25, 2018·0 cites·20 claims
- 2551US9780019B2Semiconductor component and method of manufactureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Oct 3, 2017·0 cites·13 claims
- 2651US8339758B2Transient voltage suppressor and methodLIU MINGJIAO·Filed 2008·Granted Dec 25, 2012·2 cites·20 claims
- 2749US10388539B2Semiconductor component and method of manufactureSEMICONDUCTOR COMPONENTS IND LLC·Filed 2016·Granted Aug 20, 2019·0 cites·21 claims
- 2846US8309422B2Low clamp voltage ESD methodMARREIRO DAVID D·Filed 2010·Granted Nov 13, 2012·0 cites·9 claims
- 2939US2009273868A1Transient voltage suppressor and methodSEMICONDUCTOR COMPONENTS IND·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →