Inventor · disambiguated record
Wei Chuang Wu
Also filed as: WU WEI CHUANG
43 granted patents·8 pending applications·67 citations·filing 2010–2025
97Inventor score
Top patents by PatentIndex Score
51 records- 0197US11791357B2Composite BSI structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 17, 2023·5 cites·20 claims
- 0297US11437420B2Image sensor with overlap of backside trench isolation structure and vertical transfer gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Sep 6, 2022·4 cites·20 claims
- 0395US11031434B2Self aligned grids in BSI image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 8, 2021·4 cites·20 claims
- 0494US11211419B2Composite bsi structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 28, 2021·4 cites·20 claims
- 0594US10461109B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Oct 29, 2019·9 cites·20 claims
- 0693US11430823B2Method for manufacturing semiconductor image sensor device having deep trench isolationTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 30, 2022·2 cites·20 claims
- 0793US11404460B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Aug 2, 2022·3 cites·20 claims
- 0893US10943940B2Image sensor comprising reflective guide layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Mar 9, 2021·5 cites·20 claims
- 0992US10825853B2Semiconductor image sensor device with deep trench isolations and method for manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 3, 2020·3 cites·20 claims
- 1092US10269857B2Image sensor comprising reflective guide layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 23, 2019·5 cites·20 claims
- 1189US11984465B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 14, 2024·1 cites·20 claims
- 1289US10797091B2Semiconductor imaging device having improved dark current performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Oct 6, 2020·2 cites·20 claims
- 1389US10622394B2Image sensing deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Apr 14, 2020·5 cites·20 claims
- 1489US2025351596A1Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1588US10727265B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 28, 2020·3 cites·20 claims
- 1687US12317613B2Self aligned grids in BSI image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted May 27, 2025·0 cites·20 claims
- 1785US12464839B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Granted Nov 4, 2025·0 cites·20 claims
- 1885US12191282B2Shared pad/bridge layout for a 3D ICTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jan 7, 2025·1 cites·20 claims
- 1985US9812483B2Back-side illuminated (BSI) image sensor with global shutter schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 7, 2017·4 cites·20 claims
- 2085US2025343113A1Through-substrate-via with reentrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2184US12255219B2Image sensor with overlap of backside trench isolation structure and vertical transfer gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Mar 18, 2025·0 cites·20 claims
- 2284US12148782B2Composite BSI structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Nov 19, 2024·0 cites·20 claims
- 2384US11862535B2Through-substrate-via with reentrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Jan 2, 2024·1 cites·20 claims
- 2484US10777590B2Method for forming image sensor device structure with doping layer in light-sensing regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 15, 2020·1 cites·20 claims
- 2584US2025275263A1Method of forming self aligned grids in bsi image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 2682US2024371904A1Composite bsi structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 2779US11791361B2Image sensor with overlap of backside trench isolation structure and vertical transfer gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 17, 2023·0 cites·20 claims
- 2879US10861894B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 8, 2020·1 cites·20 claims
- 2979US2025185400A1Image sensor with overlap of backside trench isolation structure and vertical transfer gateTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3078US12154927B2Semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 26, 2024·0 cites·20 claims
- 3178US12040336B2Semiconductor imaging device having improved dark current performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 16, 2024·0 cites·20 claims
- 3278US9536810B1Flat pad structure for integrating complementary metal-oxide-semiconductor (CMOS) image sensor processesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 3, 2017·3 cites·20 claims
- 3378US2024313010A1Semiconductor imaging device having improved dark current performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3476US11948949B2Vertical gate field effect transistorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Apr 2, 2024·0 cites·20 claims
- 3576US2024087988A1Through-substrate-via with reentrant profileTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Application pending·0 cites
- 3675US11776985B2Method of forming self aligned grids in BSI image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 3, 2023·0 cites·20 claims
- 3774US9698190B2Image sensor comprising reflective guide layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 4, 2017·1 cites·20 claims
- 3873US2025070092A1Shared pad/bridge layout for a 3d icTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 3972US11538837B2Semiconductor imaging device having improved dark current performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Dec 27, 2022·0 cites·20 claims
- 4072US9425228B2Image sensor with reduced optical pathTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Aug 23, 2016·0 cites·20 claims
- 4171US11004880B2Semiconductor imaging device having improved dark current performanceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 11, 2021·0 cites·20 claims
- 4269US11342373B2Manufacturing method of image sensing deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 4367US11495630B2Multiple deep trench isolation (MDTI) structure for CMOS image sensorTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 8, 2022·0 cites·20 claims
- 4460US10269858B2Image sensor with reduced optical pathTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 23, 2019·0 cites·20 claims
- 4558US9349769B2Image sensor comprising reflective guide layer and method of forming the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted May 24, 2016·0 cites·20 claims
- 4657US10475828B2Image sensor device structure with doping layer in light-sensing regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Nov 12, 2019·0 cites·20 claims
- 4756US9917130B2Image sensor with reduced optical pathTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 13, 2018·0 cites·20 claims
- 4855US10147752B2Back-side illuminated (BSI) image sensor with global shutter schemeTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 4, 2018·0 cites·20 claims
- 4946US10304889B2Image sensor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 28, 2019·0 cites·20 claims
- 5046US10164156B2Structure and formation method of image sensor structure with grid structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·0 cites·18 claims
Showing the top 50 of 51 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →