Inventor · disambiguated record
Hirotada Kuriyama
Also filed as: KURIYAMA HIROTADA
43 granted patents·1,497 citations·filing 1988–2006
98Inventor score
Top patents by PatentIndex Score
43 records- 0198US5627390ASemiconductor device with columnsMITSUBISHI ELECTRIC CORP·Filed 1996·Granted May 6, 1997·200 cites·8 claims
- 0297US5994735ASemiconductor device having a vertical surround gate metal-oxide semiconductor field effect transistor, and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 30, 1999·178 cites·6 claims
- 0396US6359804B2Static semiconductor memory cell formed in an n-well and p-wellMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 19, 2002·126 cites·5 claims
- 0495US6420751B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jul 16, 2002·73 cites·4 claims
- 0595US5689458ASemiconductor memory device having negative resistance element operated stably with single low power sourceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 18, 1997·108 cites·13 claims
- 0694US6882006B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2002·Granted Apr 19, 2005·60 cites·2 claims
- 0794US5780888ASemiconductor device with storage nodeMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jul 14, 1998·94 cites·11 claims
- 0892US6150688ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 21, 2000·75 cites·17 claims
- 0992US6127209ASemiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 3, 2000·73 cites·9 claims
- 1091US6303425B1Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Oct 16, 2001·45 cites·15 claims
- 1189US6383860B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 7, 2002·36 cites·15 claims
- 1285US5774393ASemiconductor memory device capable of operating at high speed and stably even low power supply voltageMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 30, 1998·55 cites·7 claims
- 1370US5673230ASemiconductor memory device capable of operating at high speed and stably even under low power supply voltageMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Sep 30, 1997·26 cites·5 claims
- 1470US5341327AStatic random access type semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1992·Granted Aug 23, 1994·30 cites·20 claims
- 1567US5886388AStatic semiconductor memory device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 23, 1999·26 cites·5 claims
- 1666US4811155AProtection circuit for a semiconductor integrated circuit having bipolar transistorsMITSUBISHI ELECTRIC CORP·Filed 1988·Granted Mar 7, 1989·26 cites·8 claims
- 1763US6703953B2Semiconductor device, method of manufacturing semiconductor device and communication methodRENESAS TECH CORP·Filed 1999·Granted Mar 9, 2004·26 cites·37 claims
- 1863US5596212ASemiconductor memory device and a manufacturing method of the sameMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jan 21, 1997·29 cites·7 claims
- 1962US5838609AIntegrated semiconductor device having negative resistance formed of MIS switching diodeMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 17, 1998·16 cites·8 claims
- 2062US5517038ASemiconductor device including three-dimensionally disposed logic elements for improving degree of integrationMITSUBISHI ELECTRIC CORP·Filed 1994·Granted May 14, 1996·22 cites·20 claims
- 2161US5384731ASRAM memory structure and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Jan 24, 1995·20 cites·16 claims
- 2259US7321152B2Thin-film transistor and method of fabricating the sameRENESAS TECH CORP·Filed 2006·Granted Jan 22, 2008·1 cites·4 claims
- 2357US6657885B2Static semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Dec 2, 2003·6 cites·3 claims
- 2453US5619056ASRAM semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Apr 8, 1997·13 cites·11 claims
- 2551US5841153ASRAM semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 24, 1998·12 cites·3 claims
- 2649US5945715ASemiconductor memory device having a memory cell region and a peripheral circuit region and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Aug 31, 1999·16 cites·8 claims
- 2748US7187040B2Thin-film transistor and method of fabricating the sameRENESAS TECH CORP·Filed 2005·Granted Mar 6, 2007·0 cites·2 claims
- 2848US6255719B1Semiconductor device including thermal neutron absorption materialMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jul 3, 2001·16 cites·14 claims
- 2947US6441448B1Semiconductor storage deviceMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Aug 27, 2002·10 cites·4 claims
- 3047US5379247ASemiconductor memory device including memory cells connected to a ground lineMITSUBISHI ELECTRIC CORP·Filed 1993·Granted Jan 3, 1995·9 cites·18 claims
- 3145US5818080ASemiconductor memory device including a memory cell region of six transistorsMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Oct 6, 1998·10 cites·8 claims
- 3245US5463576ASemiconductor memory device including memory cells connected to a ground lineMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Oct 31, 1995·8 cites·4 claims
- 3343US5717240AStatic semiconductor memory deviceMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Feb 10, 1998·10 cites·15 claims
- 3442US6030548ASRAM memory device having reduced sizeMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Feb 29, 2000·8 cites·6 claims
- 3540USRE36531ESemiconductor memory device including memory cells connected to a ground lineMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jan 25, 2000·4 cites·19 claims
- 3640US5859444ASemiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jan 12, 1999·9 cites·14 claims
- 3739US6501178B1Semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Dec 31, 2002·8 cites·20 claims
- 3839US5994719ASRAM semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Nov 30, 1999·5 cites·3 claims
- 3934US7112854B1Thin-film transistor and method of fabricating the sameRENESAS TECH CORP·Filed 1997·Granted Sep 26, 2006·2 cites·8 claims
- 4034US5981990ASemiconductor memory device, method of manufacturing the same and method of using the sameMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Nov 9, 1999·2 cites·18 claims
- 4133US6563165B2Non-volatile semiconductor memory device and method for producing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 13, 2003·2 cites·3 claims
- 4232US6242786B1SOI Semiconductor device with field shield electrodeMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jun 5, 2001·2 cites·8 claims
- 4326US5550390ASemiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Aug 27, 1996·0 cites·7 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →