Inventor · disambiguated record
Yuuichi Hirano
Also filed as: HIRANO YUUICHI
54 granted patents·11 pending applications·1,030 citations·filing 1997–2008
99Inventor score
Top patents by PatentIndex Score
65 records- 0196US5892382ACurrent mode logic circuit, source follower circuit and flip flop circuitMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Apr 6, 1999·116 cites·4 claims
- 0295US6452249B1Inductor with patterned ground shieldMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Sep 17, 2002·89 cites·19 claims
- 0393US7541644B2Semiconductor device with effective heat-radiationRENESAS TECH CORP·Filed 2004·Granted Jun 2, 2009·71 cites·10 claims
- 0493US6611041B2Inductor with patterned ground shieldMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Aug 26, 2003·59 cites·10 claims
- 0592US6455894B1Semiconductor device, method of manufacturing the same and method of arranging dummy regionMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Sep 24, 2002·72 cites·10 claims
- 0690US6933565B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2000·Granted Aug 23, 2005·39 cites·13 claims
- 0789US6104214ACurrent mode logic circuit, source follower circuit, and flip flop circuitMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Aug 15, 2000·52 cites·12 claims
- 0887US6340829B1Semiconductor device and method for manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Jan 22, 2002·64 cites·10 claims
- 0987US6304110B1Buffer using dynamic threshold-voltage MOS transistorMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Oct 16, 2001·71 cites·9 claims
- 1084US7067881B2Semiconductor deviceRENESAS TECH CORP·Filed 2004·Granted Jun 27, 2006·29 cites·6 claims
- 1183US6429079B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Aug 6, 2002·29 cites·7 claims
- 1279US7307318B2Semiconductor deviceRENESAS TECH CORP·Filed 2005·Granted Dec 11, 2007·5 cites·9 claims
- 1378US6252280B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2000·Granted Jun 26, 2001·23 cites·7 claims
- 1476US7193272B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Mar 20, 2007·4 cites·4 claims
- 1576US6975041B2Semiconductor storage device having high soft-error immunityRENESAS TECH CORP·Filed 2004·Granted Dec 13, 2005·28 cites·11 claims
- 1675US7838349B2Semiconductor device and method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2008·Granted Nov 23, 2010·3 cites·10 claims
- 1775US7741679B2Semiconductor device, method of manufacturing same and method of designing sameRENESAS TECH CORP·Filed 2007·Granted Jun 22, 2010·4 cites·8 claims
- 1875US6872979B2Semiconductor substrate with stacked oxide and SOI layers with a molten or epitaxial layer formed on an edge of the stacked layersRENESAS TECH CORP·Filed 2003·Granted Mar 29, 2005·13 cites·4 claims
- 1975US6204536B1Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 1998·Granted Mar 20, 2001·31 cites·10 claims
- 2074US7303950B2Semiconductor device, method of manufacturing same and method of designing sameMITSUBISHI ELECTRIC CORP·Filed 2005·Granted Dec 4, 2007·4 cites·8 claims
- 2173US7332776B2Semiconductor deviceRENESAS TECH CORP·Filed 2007·Granted Feb 19, 2008·3 cites·2 claims
- 2273US6337230B2Semiconductor device and manufacturing method thereofMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Jan 8, 2002·17 cites·6 claims
- 2372US6563172B2Semiconductor substrate processing methodMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 13, 2003·12 cites·5 claims
- 2471US7675122B2Semiconductor memory deviceRENESAS TECH CORP·Filed 2007·Granted Mar 9, 2010·2 cites·27 claims
- 2571US7382026B2Semiconductor memory device and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted Jun 3, 2008·2 cites·7 claims
- 2671US6841400B2Method of manufacturing semiconductor device having trench isolationRENESAS TECH CORP·Filed 2002·Granted Jan 11, 2005·13 cites·7 claims
- 2769US6958266B2Semiconductor device, method of manufacturing same and method of designing sameMITSUBISHI ELECTRIC CORP·Filed 2002·Granted Oct 25, 2005·10 cites·10 claims
- 2869US6953979B1Semiconductor device, method of manufacturing same and method of designing sameMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Oct 11, 2005·20 cites·23 claims
- 2967US7271454B2Semiconductor memory device and method of manufacturing the sameRENESAS TECH CORP·Filed 2004·Granted Sep 18, 2007·7 cites·24 claims
- 3066US6225665B1Semiconductor device having multiple source regionsMITSUBISHI ELECTRIC CORP·Filed 1999·Granted May 1, 2001·21 cites·12 claims
- 3165US6756692B2Semiconductor storage device having high soft-error immunityRENESAS TECH CORP·Filed 2002·Granted Jun 29, 2004·17 cites·5 claims
- 3265US6232201B1Semiconductor substrate processing methodMITSUBISHI ELECTRIC CORP·Filed 1998·Granted May 15, 2001·24 cites·14 claims
- 3364US7393731B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2005·Granted Jul 1, 2008·1 cites·9 claims
- 3462US7608879B2Semiconductor device including a capacitanceRENESAS TECH CORP·Filed 2007·Granted Oct 27, 2009·1 cites·2 claims
- 3561US7598570B2Semiconductor device, SRAM and manufacturing method of semiconductor deviceRENESAS TECH CORP·Filed 2005·Granted Oct 6, 2009·2 cites·7 claims
- 3661US7144764B2Method of manufacturing semiconductor device having trench isolationRENESAS TECH CORP·Filed 2004·Granted Dec 5, 2006·7 cites·3 claims
- 3760US6657312B2Semiconductor device in which bump used for fixing potential of silicon substrate can be easily formedMITSUBISHI ELECTRIC CORP·Filed 2001·Granted Dec 2, 2003·9 cites·6 claims
- 3858US6858918B2Semiconductor device including a capacitanceRENESAS TECH CORP·Filed 2002·Granted Feb 22, 2005·5 cites·8 claims
- 3957US7045867B2Semiconductor device of reduced gate overlap capacitance and method of manufacturing the semiconductor deviceRENESAS TECH CORP·Filed 2003·Granted May 16, 2006·8 cites·9 claims
- 4056US6291857B1Semiconductor device of SOI structure with floating body regionMITSUBISHI ELECTRIC CORP·Filed 1999·Granted Sep 18, 2001·13 cites·12 claims
- 4155US7723790B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2008·Granted May 25, 2010·0 cites·8 claims
- 4254US6738791B2Data synchronizing deviceFUJITSU LTD·Filed 2001·Granted May 18, 2004·5 cites·11 claims
- 4354US2008128810A1Semiconductor deviceRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 4454US2008128814A1Semiconductor deviceRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 4554US2008067593A1Semiconductor deviceRENESAS TECH CORP·Filed 2007·Application pending·0 cites
- 4652US7482658B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted Jan 27, 2009·0 cites·4 claims
- 4752US7439587B2Semiconductor device and method of manufacturing the sameRENESAS TECH CORP·Filed 2007·Granted Oct 21, 2008·0 cites·1 claims
- 4852US6383850B2Semiconductor device and method of manufacturing the sameMITSUBISHI ELECTRIC CORP·Filed 2001·Granted May 7, 2002·4 cites·4 claims
- 4951US7339238B2Semiconductor device including a capacitanceRENESAS TECH CORP·Filed 2006·Granted Mar 4, 2008·0 cites·4 claims
- 5049US6787855B2Semiconductor device and method of manufacturing sameRENESAS TECH CORP·Filed 2001·Granted Sep 7, 2004·2 cites·11 claims
Showing the top 50 of 65 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →