Inventor · disambiguated record
Zempei Kawazu
Also filed as: KAWAZU ZEMPEI
17 granted patents·3 pending applications·975 citations·filing 1994–2016
94Inventor score
Top patents by PatentIndex Score
20 records- 0198US5739552ASemiconductor light emitting diode producing visible lightMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Apr 14, 1998·527 cites·25 claims
- 0294US5760426AHeteroepitaxial semiconductor device including silicon substrate, GaAs layer and GaN layer #13MITSUBISHI ELECTRIC CORP·Filed 1996·Granted Jun 2, 1998·165 cites·5 claims
- 0385US5880485ASemiconductor device including Gallium nitride layerMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Mar 9, 1999·116 cites·8 claims
- 0482US9422640B2Single-crystal 4H-SiC substrateMITSUBISHI ELECTRIC CORP·Filed 2014·Granted Aug 23, 2016·1 cites·12 claims
- 0574US9988738B2Method for manufacturing SiC epitaxial waferMITSUBISHI ELECTRIC CORP·Filed 2013·Granted Jun 5, 2018·3 cites·20 claims
- 0673US5764673ASemiconductor light emitting deviceMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Jun 9, 1998·55 cites·3 claims
- 0770US5701321ASemiconductor laser producing short wavelength lightMITSUBISHI ELECTRIC CORP·Filed 1996·Granted Dec 23, 1997·49 cites·13 claims
- 0870US5582647AMaterial supplying apparatusMITSUBISHI ELECTRIC CORP·Filed 1994·Granted Dec 10, 1996·29 cites·4 claims
- 0969US9903048B2Single-crystal 4H-SiC substrateMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Feb 27, 2018·0 cites·9 claims
- 1066US9824911B2Substrate support and semiconductor manufacturing apparatusOHNO AKIHITO·Filed 2013·Granted Nov 21, 2017·2 cites·3 claims
- 1152US9752254B2Method for manufacturing a single-crystal 4H—SiC substrateMITSUBISHI ELECTRIC CORP·Filed 2016·Granted Sep 5, 2017·0 cites·9 claims
- 1248US5539239ASemiconductor light emitting element with II-VI and III-V compoundsMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 23, 1996·14 cites·5 claims
- 1347US7151004B2Method of fabricating semiconductor laserMITSUBISHI ELECTRIC CORP·Filed 2004·Granted Dec 19, 2006·1 cites·2 claims
- 1446US2010003778A1Method of manufacturing semiconductor laserMITSUBISHI ELECTRIC CORP·Filed 2008·Application pending·0 cites
- 1543US7378351B2Method of manufacturing nitride semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2005·Granted May 27, 2008·0 cites·4 claims
- 1640US2002075923A1Semiconductor laser device and method for fabricating the sameFiled 2001·Application pending·0 cites
- 1738US5535699AMethod of making II-VI semiconductor infrared light detectorMITSUBISHI ELECTRIC CORP·Filed 1995·Granted Jul 16, 1996·7 cites·1 claims
- 1837US6737288B2Method for fabricating a semiconductor deviceMITSUBISHI ELECTRIC CORP·Filed 2002·Granted May 18, 2004·0 cites·7 claims
- 1936US5841156ASemiconductor device including T1 GaAs layerMITSUBISHI ELECTRIC CORP·Filed 1997·Granted Nov 24, 1998·6 cites·4 claims
- 2036US2013109134A1Method of manufacturing semiconductor deviceHATAKENAKA SUSUMU·Filed 2012·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →