Inventor · disambiguated record
Kazumi Inoh
Also filed as: INOH KAZUMI
14 granted patents·299 citations·filing 1995–2007
93Inventor score
Files withTOSHIBA KK14
Top patents by PatentIndex Score
14 records- 0194US7009273B2Semiconductor device with a cavity therein and a method of manufacturing the sameTOSHIBA KK·Filed 2003·Granted Mar 7, 2006·92 cites·15 claims
- 0293US7087475B2Semiconductor device having a plurality of gate electrodes and manufacturing method thereofTOSHIBA KK·Filed 2005·Granted Aug 8, 2006·28 cites·16 claims
- 0385US5620908AManufacturing method of semiconductor device comprising BiCMOS transistorTOSHIBA KK·Filed 1995·Granted Apr 15, 1997·80 cites·4 claims
- 0478US7145215B2Semiconductor device with a cavity therein and a method of manufacturing the sameTOSHIBA KK·Filed 2005·Granted Dec 5, 2006·7 cites·5 claims
- 0574US7696558B2Semiconductor memory device for storing data as state of majority carriers accumulated in channel body and method of manufacturing the sameTOSHIBA KK·Filed 2007·Granted Apr 13, 2010·5 cites·11 claims
- 0674US7301195B2Semiconductor memory device for storing data as state of majority carriers accumulated in channel body and method of manufacturing the sameTOSHIBA KK·Filed 2004·Granted Nov 27, 2007·16 cites·3 claims
- 0774US6855969B2Semiconductor device having a plurality of gate electrodes and manufacturing method thereofTOSHIBA KK·Filed 2002·Granted Feb 15, 2005·17 cites·7 claims
- 0863US7238988B2Semiconductor memory deviceTOSHIBA KK·Filed 2004·Granted Jul 3, 2007·10 cites·14 claims
- 0958US6933590B2Semiconductor device comprising plurality of semiconductor areas having the same top surface and different film thicknesses and manufacturing method for the sameTOSHIBA KK·Filed 2003·Granted Aug 23, 2005·8 cites·7 claims
- 1051US6376897B2Lateral bipolar transistor formed on an insulating layerTOSHIBA KK·Filed 1999·Granted Apr 23, 2002·13 cites·10 claims
- 1150US6635952B2Semiconductor deviceTOSHIBA KK·Filed 2002·Granted Oct 21, 2003·4 cites·15 claims
- 1241US5866446AMethod of manufacturing bimos deviceTOSHIBA KK·Filed 1997·Granted Feb 2, 1999·7 cites·18 claims
- 1340US6174779B1Method for manufacturing a lateral bipolar transistorTOSHIBA KK·Filed 1999·Granted Jan 16, 2001·7 cites·9 claims
- 1436US5886395ASemiconductor device having bipolar transistor with unique ratio of base gummel number to impurity concentration of collector regionTOSHIBA KK·Filed 1997·Granted Mar 23, 1999·5 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →