Inventor · disambiguated record
De-Dui Liao
Also filed as: LIAO DE-DUI · LIAO DE-DUI M · LIAO DE-DUI MARVIN
11 granted patents·2 pending applications·92 citations·filing 1994–2020
88Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD8SGS THOMSON MICROELECTRONICS2TAIWAN SEMICONDUCTOR MFG2ST MICROELECTRONICS INC1
Top patents by PatentIndex Score
13 records- 0191US9997471B2Semiconductor package structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jun 12, 2018·6 cites·20 claims
- 0283US5652464AIntegrated circuit with a titanium nitride contact barrier having oxygen stuffed grain boundariesSGS THOMSON MICROELECTRONICS·Filed 1995·Granted Jul 29, 1997·43 cites·13 claims
- 0382US10163849B2Method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·2 cites·20 claims
- 0471US10115686B2Semiconductor structure and fabricating method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Oct 30, 2018·2 cites·20 claims
- 0570US11532569B2Method for manufacturing semiconductor package structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Dec 20, 2022·0 cites·20 claims
- 0670US11069652B2Method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 20, 2021·0 cites·20 claims
- 0763US10535629B2Method of manufacturing semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Jan 14, 2020·0 cites·20 claims
- 0861US10636747B2Semiconductor package structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 28, 2020·0 cites·20 claims
- 0961US6191033B1Method of fabricating an integrated circuit with improved contact barrierST MICROELECTRONICS INC·Filed 1997·Granted Feb 20, 2001·15 cites·4 claims
- 1054US9799625B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Oct 24, 2017·0 cites·20 claims
- 1148US5374592AMethod for forming an aluminum metal contactSGS THOMSON MICROELECTRONICS·Filed 1994·Granted Dec 20, 1994·24 cites·9 claims
- 1246US2006237320A1Method for forming a metal layer in multiple stepsTAIWAN SEMICONDUCTOR MFG·Filed 2005·Application pending·0 cites
- 1336US2005236181A1Novel ECP method for preventing the formation of voids and contamination in viasTAIWAN SEMICONDUCTOR MFG·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →