Inventor · disambiguated record
Jang-Sik Lee
Also filed as: LEE JANG SIK
9 granted patents·5 pending applications·93 citations·filing 2000–2025
86Inventor score
Files withPOSTECH RES & BUSINESS DEV FOUND4LEE JANG-SIK3JOO SEUNG KI2UNIV KOOKMIN IND ACAD COOP FOUND2SAMSUNG ELECTRONICS CO LTD1
Top patents by PatentIndex Score
14 records- 0186US6335207B1Method for fabricating ferroelectric thin filmJOO SEUNG KI·Filed 2000·Granted Jan 1, 2002·41 cites·11 claims
- 0276US6340600B1Methods for fabricating large single-grained ferroelectric thin film, for fabricating ferroelectric thin film capacitor using the same, and for fabricating ferroelectric memory device using the sameSEUNG KEE JOO·Filed 2001·Granted Jan 22, 2002·25 cites·19 claims
- 0375US7745874B2Floating gate having multiple charge storing layers, method of fabricating the floating gate, non-volatile memory device using the same, and fabricating method thereofUNIV KOOKMIN IND ACAD COOP FOUND·Filed 2007·Granted Jun 29, 2010·7 cites·20 claims
- 0469US7897458B2Method of forming floating gate, non-volatile memory device using the same, and fabricating method thereofUNIV KOOKMIN IND ACAD COOP FOUND·Filed 2008·Granted Mar 1, 2011·5 cites·15 claims
- 0565US6635571B2Process for forming aluminum or aluminum oxide thin film on substratesJOO SEUNG KI·Filed 2001·Granted Oct 21, 2003·10 cites·12 claims
- 0660US11925129B2Multi-layer selector device and method of fabricating the samePOSTECH RES & BUSINESS DEV FOUND·Filed 2021·Granted Mar 5, 2024·0 cites·19 claims
- 0760US7795643B2Cell array of semiconductor memory device and a method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Sep 14, 2010·4 cites·19 claims
- 0856US2025366073A1Ferroelectric transistor and method of operating the samePOSTECH RES & BUSINESS DEV FOUND·Filed 2025·Application pending·0 cites
- 0954US2025318205A1Ferroelectric thin film transistor and method of operating the samePOSTECH RES & BUSINESS DEV FOUND·Filed 2025·Application pending·0 cites
- 1050US8268711B2Floating gate having multiple charge storing layers, method of fabricating the floating gate, non-volatile memory device using the same, and fabricating method thereofLEE JANG-SIK·Filed 2010·Granted Sep 18, 2012·1 cites·11 claims
- 1150US2022181353A1Semiconductor memory device and manufacturing method thereofPOSTECH RES & BUSINESS DEV FOUND·Filed 2021·Application pending·0 cites
- 1237US8237199B2Cell array of semiconductor memory device and a method of forming the sameSEL JONG-SUN·Filed 2010·Granted Aug 7, 2012·0 cites·9 claims
- 1334US2010276747A1Charge trapping layer, method of forming the charge trapping layer, non-volatile memory device using the same and method of fabricating the non-volatile memory deviceLEE JANG-SIK·Filed 2009·Application pending·0 cites
- 1426US2012138905A1Flexible organic memory device and method of fabricating the sameLEE JANG-SIK·Filed 2011·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →