Inventor · disambiguated record
Kazumasa Kiyomi
Also filed as: KIYOMI KAZUMASA
10 granted patents·5 pending applications·146 citations·filing 1997–2013
90Inventor score
Top patents by PatentIndex Score
15 records- 0190US8142566B2Method for producing Ga-containing nitride semiconductor single crystal of BxAlyGazIn1-x-y-zNsPtAs1-s-t (0<=x<=1, 0<=y<1, 0<z<=1, 0<s<=1 and 0<=t<1) on a substrateKIYOMI KAZUMASA·Filed 2005·Granted Mar 27, 2012·35 cites·9 claims
- 0282US8269251B2Method for producing group III nitride semiconductor crystal, group III nitride semiconductor substrate, and semiconductor light-emitting deviceFUJITO KENJI·Filed 2008·Granted Sep 18, 2012·7 cites·13 claims
- 0380US7794541B2Gallium nitride-based material and method of manufacturing the sameUNIV TOHOKU·Filed 2007·Granted Sep 14, 2010·7 cites·18 claims
- 0479US6707071B2Semiconductor light-emitting deviceMITSUBISHI CHEM CORP·Filed 2002·Granted Mar 16, 2004·14 cites·13 claims
- 0574US6807213B1Semiconductor optical device apparatusMITSUBISHI CHEM CORP·Filed 2000·Granted Oct 19, 2004·29 cites·53 claims
- 0674US6387721B1Semiconductor light-emitting device and manufacturing method for the sameMITSUBISHI CHEM CORP·Filed 1999·Granted May 14, 2002·34 cites·8 claims
- 0766US9112096B2Method for producing group-III nitride semiconductor crystal, group-III nitride semiconductor substrate, and semiconductor light emitting deviceMITSUBISHI CHEM CORP·Filed 2013·Granted Aug 18, 2015·1 cites·19 claims
- 0854US6265733B1Semiconductor device and method for manufacturing the sameMITSUBISHI CHEM CORP·Filed 1997·Granted Jul 24, 2001·15 cites·16 claims
- 0952US6744066B2Semiconductor device and method for manufacturing the sameMITSUBISHI CHEM CORP·Filed 2001·Granted Jun 1, 2004·3 cites·25 claims
- 1049US2012305983A1Method for producing group-iii nitride semiconductor crystal, group-iii nitride semiconductor substrate, and semiconductor light emitting deviceFUJITO KENJI·Filed 2012·Application pending·0 cites
- 1146US6589807B2Semiconductor device and method for manufacturing the sameMITSUBISHI CHEM CORP·Filed 2001·Granted Jul 8, 2003·1 cites·7 claims
- 1244US2010162945A1Gallium nitride-based material and method of manufacturing the sameUNIV TOHOKU·Filed 2010·Application pending·0 cites
- 1344US2010140536A1Gallium nitride-based materialUNIV TOHOKU·Filed 2010·Application pending·0 cites
- 1439US2009026488A1Nitride semiconductor material and production process of nitride semiconductor crystalMITSUBISHI CHEM CORP·Filed 2006·Application pending·0 cites
- 1538US2012112320A1Nitride semiconductor crystal and production process thereofKUBO SHUICHI·Filed 2011·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Kazumasa Kiyomi files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →