Inventor · disambiguated record
Wibo D. Van Noort
Also filed as: VAN NOORT WIBO · VAN NOORT WIBO D · VAN NOORT WIBO DANIEL
18 granted patents·5 pending applications·113 citations·filing 2004–2025
92Inventor score
Files withNXP BV11TEXAS INSTRUMENTS INC4KONINKL PHILIPS ELECTRONICS NV3VAN NOORT WIBO D2DETCHEVERRY CELINE JULIETTE1
Top patents by PatentIndex Score
23 records- 0191US7741182B2Method of fabricating a dual gate FETNXP BV·Filed 2006·Granted Jun 22, 2010·18 cites·17 claims
- 0284US8373236B2Semiconductor device and method of manufacturing such a deviceNXP BV·Filed 2007·Granted Feb 12, 2013·15 cites·21 claims
- 0378US8294203B2Contacting and filling deep-trench-isolation with tungstenVAN NOORT WIBO DANIEL·Filed 2005·Granted Oct 23, 2012·12 cites·12 claims
- 0477US2025338578A1Device having multiple emitter layersTEXAS INSTRUMENTS INC·Filed 2025·Application pending·0 cites
- 0573US7932156B2Bipolar transistor having a second, base-comprising region consisting of a first layer, a second, constrictive, layer, and a third layerNXP BV·Filed 2006·Granted Apr 26, 2011·5 cites·6 claims
- 0672US7883954B2Self-aligned epitaxially grown bipolar transistorNXP BV·Filed 2005·Granted Feb 8, 2011·8 cites·9 claims
- 0771US7098530B2Package for a high-frequency electronic deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2004·Granted Aug 29, 2006·20 cites·13 claims
- 0870US2024405106A1Dopant profile control in heterojunction bipolar transistor (hbt)TEXAS INSTRUMENTS INC·Filed 2024·Application pending·0 cites
- 0969US8653926B2Inductive and capacitive elements for semiconductor technologies with minimum pattern density requirementsDETCHEVERRY CELINE JULIETTE·Filed 2004·Granted Feb 18, 2014·23 cites·20 claims
- 1067US7906403B2Bipolar transistor and method of fabricating the sameNXP BV·Filed 2006·Granted Mar 15, 2011·5 cites·11 claims
- 1165US12382684B2Device having multiple emitter layersTEXAS INSTRUMENTS INC·Filed 2021·Granted Aug 5, 2025·0 cites·24 claims
- 1265US7923345B2Methods relating to trench-based support structures for semiconductor devicesNXP BV·Filed 2006·Granted Apr 12, 2011·3 cites·11 claims
- 1364US12068402B2Dopant profile control in heterojunction bipolar transistor (HBT)TEXAS INSTRUMENTS INC·Filed 2021·Granted Aug 20, 2024·0 cites·19 claims
- 1458US7956399B2Semiconductor device with low buried resistance and method of manufacturing such a deviceNXP BV·Filed 2006·Granted Jun 7, 2011·1 cites·18 claims
- 1555US8729652B2Semiconductor device for radiation detectionHERINGA ANCO·Filed 2007·Granted May 20, 2014·1 cites·9 claims
- 1652US7838374B2Method of manufacturing a bipolar transistorNXP BV·Filed 2007·Granted Nov 23, 2010·2 cites·9 claims
- 1744US2009096052A1Semiconductor device for radiation detectionKONINKL PHILIPS ELECTRONICS NV·Filed 2007·Application pending·0 cites
- 1841US7659600B2Semiconductor device and method of manufacturing such a deviceNXP BV·Filed 2005·Granted Feb 9, 2010·0 cites·12 claims
- 1941US2010047987A1Method of fabricating a bipolar transistorNXP BV·Filed 2006·Application pending·0 cites
- 2038US2008258182A1Bicmos Compatible Jfet Device and Method of Manufacturing SameKONINKL PHILIPS ELECTRONICS NV·Filed 2005·Application pending·0 cites
- 2137US9331086B2Integrated circuit with trimmingVAN NOORT WIBO D·Filed 2009·Granted May 3, 2016·0 cites·16 claims
- 2236US7381656B2Method of manufacturing a semiconductor device and semiconductor device obtained by means of said methodNXP BV·Filed 2005·Granted Jun 3, 2008·0 cites·15 claims
- 2330US8084829B2Semiconductors device and method of manufacturing such a deviceVAN NOORT WIBO D·Filed 2005·Granted Dec 27, 2011·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →