Inventor · disambiguated record
Shoji Akiyama
Also filed as: AKIYAMA SHOJI
137 granted patents·43 pending applications·1,424 citations·filing 1995–2024
99Inventor score
Top patents by PatentIndex Score
180 records- 0197US10315194B2Chip device and a particle analyzing apparatusSONY CORP·Filed 2016·Granted Jun 11, 2019·20 cites·21 claims
- 0297US6245647B1Method for fabrication of thin filmSHINETSU HANDOTAI KK·Filed 1999·Granted Jun 12, 2001·287 cites·10 claims
- 0395US8518612B2Pellicle for lithography and manufacturing method thereofAKIYAMA SHOJI·Filed 2010·Granted Aug 27, 2013·12 cites·20 claims
- 0494US6544656B1Production method for silicon wafer and silicon waferSHINETSU HANDOTAI KK·Filed 2000·Granted Apr 8, 2003·127 cites·24 claims
- 0593US7951513B2Pellicle and method for producing pellicleSHINETSU CHEMICAL CO·Filed 2009·Granted May 31, 2011·16 cites·20 claims
- 0693US7321713B2Silicon based on-chip photonic band gap cladding waveguideMASSACHUSETTS INST TECHNOLOGY·Filed 2005·Granted Jan 22, 2008·45 cites·14 claims
- 0792US6666265B1Heat exchanger, method of manufacturing the heat exchanger, and method of manufacturing tube for heat exchangeZEXEL VALEO CLIMATE CONTR CORP·Filed 2000·Granted Dec 23, 2003·34 cites·7 claims
- 0891US8975159B2Method for manufacturing bonded waferAKIYAMA SHOJI·Filed 2010·Granted Mar 10, 2015·14 cites·11 claims
- 0991US6988539B2Heat exchangerZEXEL VALEO CLIMATE CONTR CORP·Filed 2004·Granted Jan 24, 2006·48 cites·6 claims
- 1090US9195130B2Pellicle for EUVSHINETSU CHEMICAL CO·Filed 2013·Granted Nov 24, 2015·6 cites·3 claims
- 1190US9176042B2Microchip and particulate analyzing deviceITO TATSUMI·Filed 2011·Granted Nov 3, 2015·7 cites·26 claims
- 1290US6680260B2Method of producing a bonded wafer and the bonded waferSHINETSU HANDOTAI KK·Filed 2002·Granted Jan 20, 2004·53 cites·28 claims
- 1390US6621972B2Optical waveguides with trench structuresMASSACHUSETTS INST TECHNOLOGY·Filed 2001·Granted Sep 16, 2003·53 cites·21 claims
- 1488US7855127B2Method for manufacturing semiconductor substrateSHINETSU CHEMICAL CO·Filed 2008·Granted Dec 21, 2010·12 cites·12 claims
- 1586US7117936B2Tube for heat exchangerVALEO THERMAL SYS JAPAN CO·Filed 2003·Granted Oct 10, 2006·36 cites·4 claims
- 1685US10612157B2Method for manufacturing SiC composite substrate, and method for manufacturing semiconductor substrateSHINETSU CHEMICAL CO·Filed 2016·Granted Apr 7, 2020·4 cites·9 claims
- 1785US9459182B2Microchip and particle analyzing apparatusAKIYAMA YUJI·Filed 2012·Granted Oct 4, 2016·4 cites·14 claims
- 1885US8748294B2SOS substrate with reduced stressAKIYAMA SHOJI·Filed 2010·Granted Jun 10, 2014·8 cites·6 claims
- 1985US6461939B1SOI wafers and methods for producing SOI waferSHINETSU HANDOTAI KK·Filed 2000·Granted Oct 8, 2002·42 cites·17 claims
- 2084US8088670B2Method for manufacturing bonded substrate with sandblast treatmentAKIYAMA SHOJI·Filed 2008·Granted Jan 3, 2012·9 cites·24 claims
- 2184US7901846B2Pellicle and method for manufacturing the sameSHINETSU CHEMICAL CO·Filed 2008·Granted Mar 8, 2011·14 cites·13 claims
- 2284US6492682B1Method of producing a bonded wafer and the bonded waferSHIN ETSU HANDOTAL CO LTD·Filed 2000·Granted Dec 10, 2002·35 cites·1 claims
- 2383US8263478B2Method for manufacturing semiconductor substrateAKIYAMA SHOJI·Filed 2010·Granted Sep 11, 2012·6 cites·2 claims
- 2482US7190524B2Process for fabrication of high reflectors by reversal of layer sequence and application thereofMASSACHUSETTS INST TECHNOLOGY·Filed 2004·Granted Mar 13, 2007·26 cites·11 claims
- 2582US6391796B1Method for heat-treating silicon wafer and silicon waferSHINETSU HANDOTAI KK·Filed 1999·Granted May 21, 2002·61 cites·8 claims
- 2681US9405184B2Pellicle for EUV, and an assembly including the pellicle, and a method for assembling the sameSHINETSU CHEMICAL CO·Filed 2015·Granted Aug 2, 2016·2 cites·7 claims
- 2781US8030176B2Method for preparing substrate having monocrystalline filmSHINETSU CHEMICAL CO·Filed 2009·Granted Oct 4, 2011·10 cites·16 claims
- 2880US10629440B2Method for manufacturing composite wafer provided with oxide single crystal thin filmSHINETSU CHEMICAL CO·Filed 2017·Granted Apr 21, 2020·3 cites·15 claims
- 2979US10770648B2Method for producing composite wafer having oxide single-crystal filmSHINETSU CHEMICAL CO·Filed 2016·Granted Sep 8, 2020·3 cites·6 claims
- 3079US10727396B2Method for producing composite wafer having oxide single-crystal filmSHINETSU CHEMICAL CO·Filed 2016·Granted Jul 28, 2020·3 cites·8 claims
- 3179US8937721B2Sensing deviceFUJIMAKI MAKOTO·Filed 2011·Granted Jan 20, 2015·4 cites·11 claims
- 3279US8657121B2Microparticle sorting apparatus, microchip and microchip moduleSHINODA MASATAKA·Filed 2011·Granted Feb 25, 2014·5 cites·50 claims
- 3379US2022118444A1Microchip and particulate analyzing deviceSONY CORP·Filed 2021·Application pending·0 cites
- 3478US10756254B2Composite substrate and method of manufacturing composite substrateSHINETSU CHEMICAL CO·Filed 2017·Granted Aug 25, 2020·2 cites·10 claims
- 3577US11804818B2Method of manufacturing composite substrateSHINETSU CHEMICAL CO·Filed 2017·Granted Oct 31, 2023·1 cites·11 claims
- 3677US7919217B2Pellicle and method for producing pellicleSHINETSU CHEMICAL CO·Filed 2009·Granted Apr 5, 2011·4 cites·16 claims
- 3777US2025023543A1Composite substrate for surface acoustic wave device and manufacturing method thereofSHINETSU CHEMICAL CO·Filed 2024·Application pending·0 cites
- 3877US2023063086A1Microchip and microparticle measuring apparatusSONY GROUP CORP·Filed 2022·Application pending·0 cites
- 3976US10711373B2SiC composite substrate and method for manufacturing sameSHINETSU CHEMICAL CO·Filed 2016·Granted Jul 14, 2020·2 cites·8 claims
- 4076US7977209B2Method for manufacturing SOI substrateSHINETSU CHEMICAL CO·Filed 2007·Granted Jul 12, 2011·4 cites·9 claims
- 4175US11229907B2Microchip and particulate analyzing deviceSONY CORP·Filed 2020·Granted Jan 25, 2022·0 cites·23 claims
- 4275US8021910B2Method for producing single crystal silicon solar cell and single crystal silicon solar cellSHINETSU CHEMICAL CO·Filed 2007·Granted Sep 20, 2011·2 cites·18 claims
- 4375US7749870B2Method for producing SOI substrateSHINETSU CHEMICAL CO·Filed 2009·Granted Jul 6, 2010·6 cites·9 claims
- 4475US6413310B1Method for producing silicon single crystal wafer and silicon single crystal waferSHINETSU HANDOTAI KK·Filed 1999·Granted Jul 2, 2002·45 cites·24 claims
- 4574US9312166B2Method for manufacturing composite wafersAKIYAMA SHOJI·Filed 2012·Granted Apr 12, 2016·3 cites·10 claims
- 4674US7251402B2Anti-reflection coating for the pass-band of photonic bandgap crystalMASSACHUSETTS INST TECHNOLOGY·Filed 2005·Granted Jul 31, 2007·6 cites·14 claims
- 4774US6645834B2Method for manufacturing annealed wafer and annealed waferSHINETSU HANDOTAI KK·Filed 2001·Granted Nov 11, 2003·15 cites·4 claims
- 4874US2023370043A1Composite substrate for surface acoustic wave device and manufacturing method thereofSHINETSU CHEMICAL CO·Filed 2023·Application pending·0 cites
- 4973US8551862B2Method of manufacturing laminated wafer by high temperature laminating methodAKIYAMA SHOJI·Filed 2010·Granted Oct 8, 2013·3 cites·8 claims
- 5073US8546245B2Method for manufacturing composite substrate comprising wide bandgap semiconductor layerAKIYAMA SHOJI·Filed 2009·Granted Oct 1, 2013·5 cites·20 claims
Showing the top 50 of 180 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →