Inventor · disambiguated record
Xing Gu
Also filed as: GU XING
10 granted patents·1 pending application·214 citations·filing 2011–2020
86Inventor score
Top patents by PatentIndex Score
11 records- 0197US9337278B1Gallium nitride on high thermal conductivity material device and methodTRIQUINT SEMICONDUCTOR INC·Filed 2015·Granted May 10, 2016·200 cites·23 claims
- 0285US10553782B2Passive magnetic devicesQORVO US INC·Filed 2018·Granted Feb 4, 2020·2 cites·13 claims
- 0384US9972708B2Double heterojunction field effect transistor with polarization compensated layerQORVO US INC·Filed 2017·Granted May 15, 2018·4 cites·19 claims
- 0482US10749009B1Process of fabricating high efficiency, high linearity N-polar gallium-nitride (GaN) transistorsQORVO US INC·Filed 2019·Granted Aug 18, 2020·3 cites·13 claims
- 0568US11152677B2Integration of self-biased magnetic circulators with microwave devicesQORVO US INC·Filed 2019·Granted Oct 19, 2021·1 cites·20 claims
- 0668US8710511B2AIN buffer N-polar GaN HEMT profileGAMBIN VINCENT·Filed 2011·Granted Apr 29, 2014·3 cites·20 claims
- 0765US10854810B2Passive magnetic devicesQORVO US INC·Filed 2020·Granted Dec 1, 2020·0 cites·15 claims
- 0865US10037899B2Semiconductor device with high thermal conductivity substrate and process for making the sameQORVO US INC·Filed 2016·Granted Jul 31, 2018·1 cites·18 claims
- 0947US10090172B2Semiconductor device with high thermal conductivity substrate and process for making the sameQORVO US INC·Filed 2016·Granted Oct 2, 2018·0 cites·12 claims
- 1046US10177247B2Continuous crystalline gallium nitride (GaN) PN structure with no internal regrowth interfacesQORVO US INC·Filed 2017·Granted Jan 8, 2019·0 cites·21 claims
- 1138US2020011473A1Pan-tilt quick locking deviceGDU TECH CO LTD·Filed 2018·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →