Inventor · disambiguated record
Genji Nakamura
Also filed as: NAKAMURA GENJI
21 granted patents·9 pending applications·408 citations·filing 2002–2025
94Inventor score
Top patents by PatentIndex Score
30 records- 0195US10361366B2Resistive random accress memory containing a conformal titanium aluminum carbide film and method of makingTOKYO ELECTRON LTD·Filed 2018·Granted Jul 23, 2019·324 cites·20 claims
- 0294US9893161B2Parasitic capacitance reduction structure for nanowire transistors and method of manufacturingTOKYO ELECTRON LTD·Filed 2016·Granted Feb 13, 2018·11 cites·20 claims
- 0390US9882026B2Method for forming a nanowire structureTOKYO ELECTRON LTD·Filed 2016·Granted Jan 30, 2018·7 cites·20 claims
- 0482US7674710B2Method of integrating metal-containing films into semiconductor devicesTOKYO ELECTRON LTD·Filed 2006·Granted Mar 9, 2010·10 cites·29 claims
- 0582US7622340B2Method for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2006·Granted Nov 24, 2009·8 cites·16 claims
- 0674US12351905B2Film forming method and film forming apparatusTOKYO ELECTRON LTD·Filed 2022·Granted Jul 8, 2025·0 cites·19 claims
- 0774US8021987B2Method of modifying insulating filmTOKYO ELECTRON LTD·Filed 2009·Granted Sep 20, 2011·3 cites·24 claims
- 0874US7662236B2Method for forming insulation filmTOKYO ELECTRON LTD·Filed 2008·Granted Feb 16, 2010·3 cites·8 claims
- 0973US6821566B2Method and apparatus for forming insulating film containing silicon oxy-nitrideTOKYO ELECTRON LTD·Filed 2002·Granted Nov 23, 2004·15 cites·20 claims
- 1072US7655574B2Method of modifying insulating filmTOKYO ELECTRON LTD·Filed 2005·Granted Feb 2, 2010·3 cites·14 claims
- 1169US7892914B2Semiconductor device and manufacturing method thereofTOKYO ELECTRON LTD·Filed 2007·Granted Feb 22, 2011·4 cites·20 claims
- 1268US7446052B2Method for forming insulation filmTOKYO ELECTRON LTD·Filed 2003·Granted Nov 4, 2008·10 cites·18 claims
- 1358US2010096707A1Method for Forming Insulation FilmTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 1456US2025226228A1Substrate processing method and substrate processing systemTOKYO ELECTRON LTD·Filed 2025·Application pending·0 cites
- 1552US7084023B2Method of manufacturing semiconductor device, film-forming apparatus, and storage mediumTOKYO ELECTRON LTD·Filed 2004·Granted Aug 1, 2006·5 cites·6 claims
- 1650US6933249B2Method of fabricating semiconductor deviceTOKYO ELECTRON LTD·Filed 2002·Granted Aug 23, 2005·3 cites·9 claims
- 1749US11869927B2Method of manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2019·Granted Jan 9, 2024·0 cites·8 claims
- 1849US7622402B2Method for forming underlying insulation filmTOKYO ELECTRON LTD·Filed 2003·Granted Nov 24, 2009·2 cites·19 claims
- 1949US2022139942A1Semiconductor deviceTOKYO ELECTRON LTD·Filed 2022·Application pending·0 cites
- 2048US11737276B2Method of manufacturing semiconductor device and semiconductor deviceTOKYO ELECTRON LTD·Filed 2021·Granted Aug 22, 2023·0 cites·9 claims
- 2144US9698020B2CMOS Vt control integration by modification of metal-containing gate electrodesTOKYO ELECTRON LTD·Filed 2015·Granted Jul 4, 2017·0 cites·18 claims
- 2244US7897498B2Method for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2005·Granted Mar 1, 2011·0 cites·9 claims
- 2341US8846474B2Dual workfunction semiconductor devices and methods for forming thereofTOKYO ELECTRON LTD·Filed 2012·Granted Sep 30, 2014·0 cites·8 claims
- 2440US2018047787A1Nonvolatile Storage Device and Method of Fabricating Nonvolatile Storage DeviceTOKYO ELECTRON LTD·Filed 2017·Application pending·0 cites
- 2540US2008233764A1Formation of Gate Insulation FilmTAKAHASHI TSUYOSHI·Filed 2005·Application pending·0 cites
- 2639US2004253839A1Semiconductor manufacturing apparatus and heat treatment methodTOKYO ELECTRON LTD·Filed 2004·Application pending·0 cites
- 2739US2013149852A1Method for forming a semiconductor deviceNAKAMURA GENJI·Filed 2011·Application pending·0 cites
- 2836US2016351398A1Semiconductor element manufacturing methodTOKYO ELECTRON LTD·Filed 2016·Application pending·0 cites
- 2933US9887081B2Method for manufacturing insulating film laminated structureTOKYO ELECTRON LTD·Filed 2016·Granted Feb 6, 2018·0 cites·18 claims
- 3033US2006216953A1Method of forming film and film forming apparatusNAKAJIMA SHIGERU·Filed 2004·Application pending·0 cites
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