Inventor · disambiguated record
Sergey Kostylev
Also filed as: KOSTYLEV SERGEY · KOSTYLEV SERGEY A
40 granted patents·8 pending applications·3,860 citations·filing 1991–2015
98Inventor score
Files withOVONYX INC24ENERGY CONVERSION DEVICES INC5CZUBATYJ WOLODYMYR3INTEL CORP3KOSTYLEV SERGEY A3
Top patents by PatentIndex Score
48 records- 0199US5933365AMemory element with energy control mechanismENERGY CONVERSION DEVICES INC·Filed 1997·Granted Aug 3, 1999·585 cites·65 claims
- 0299US5825046AComposite memory material comprising a mixture of phase-change memory material and dielectric materialENERGY CONVERSION DEVICES INC·Filed 1996·Granted Oct 20, 1998·580 cites·14 claims
- 0398US7023009B2Electrically programmable memory element with improved contactsOVONYX INC·Filed 2004·Granted Apr 4, 2006·259 cites·25 claims
- 0498US6969866B1Electrically programmable memory element with improved contactsOVONYX INC·Filed 1999·Granted Nov 29, 2005·196 cites·33 claims
- 0598US5596522AHomogeneous compositions of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elementsENERGY CONVERSION DEVICES INC·Filed 1995·Granted Jan 21, 1997·483 cites·20 claims
- 0698US5335219AHomogeneous composition of microcrystalline semiconductor material, semiconductor devices and directly overwritable memory elements fabricated therefrom, and arrays fabricated from the memory elementsOVSHINSKY STANFORD R·Filed 1991·Granted Aug 2, 1994·450 cites·29 claims
- 0797US6087674AMemory element with memory material comprising phase-change material and dielectric materialENERGY CONVERSION DEVICES INC·Filed 1998·Granted Jul 11, 2000·843 cites·15 claims
- 0896US7280390B2Reading phase change memories without triggering reset cell threshold devicesOVONYX INC·Filed 2005·Granted Oct 9, 2007·43 cites·30 claims
- 0996US6075719AMethod of programming phase-change memory elementENERGY CONVERSION DEVICES INC·Filed 1999·Granted Jun 13, 2000·179 cites·18 claims
- 1093US6872963B2Programmable resistance memory element with layered memory materialOVONYX INC·Filed 2002·Granted Mar 29, 2005·61 cites·25 claims
- 1188US6914801B2Method of eliminating drift in phase-change memoryOVONYX INC·Filed 2003·Granted Jul 5, 2005·44 cites·23 claims
- 1286US7649191B2Forming a carbon layer between phase change layers of a phase change memoryINTEL CORP·Filed 2007·Granted Jan 19, 2010·11 cites·21 claims
- 1384US8187946B2Manufacturing a phase change memory device having a ring heaterKARPOV ILYA V·Filed 2010·Granted May 29, 2012·8 cites·12 claims
- 1482US7282730B2Forming a carbon layer between phase change layers of a phase change memoryINTEL CORP·Filed 2005·Granted Oct 16, 2007·6 cites·8 claims
- 1580US7990761B2Immunity of phase change material to disturb in the amorphous phaseOVONYX INC·Filed 2008·Granted Aug 2, 2011·7 cites·76 claims
- 1679US7327602B2Methods of accelerated life testing of programmable resistance memory elementsOVONYX INC·Filed 2004·Granted Feb 5, 2008·25 cites·21 claims
- 1779US6992369B2Programmable resistance memory element with threshold switching materialOVONYX INC·Filed 2003·Granted Jan 31, 2006·17 cites·7 claims
- 1878US9036409B2Immunity of phase change material to disturb in the amorphous phaseOVONYX INC·Filed 2014·Granted May 19, 2015·3 cites·10 claims
- 1978US7504675B2Phase change memories with improved programming characteristicsINTEL CORP·Filed 2007·Granted Mar 17, 2009·7 cites·13 claims
- 2074US7525117B2Chalcogenide devices and materials having reduced germanium or telluruim contentOVONYX INC·Filed 2005·Granted Apr 28, 2009·6 cites·15 claims
- 2173US7935951B2Composite chalcogenide materials and devicesOVONYX INC·Filed 2007·Granted May 3, 2011·5 cites·23 claims
- 2266US7473574B2Memory element with improved contactsOVONYX INC·Filed 2006·Granted Jan 6, 2009·2 cites·3 claims
- 2365US8130536B2Read window in chalcogenide semiconductor memoriesKARPOV ILYA V·Filed 2006·Granted Mar 6, 2012·5 cites·9 claims
- 2465US7459762B2Programmable resistance memory element with threshold switching materialOVONYX INC·Filed 2006·Granted Dec 2, 2008·2 cites·9 claims
- 2564US8098517B2Method of restoring variable resistance memory deviceKOSTYLEV SERGEY A·Filed 2007·Granted Jan 17, 2012·6 cites·35 claims
- 2664US7902536B2Memory device and method of making sameOVONYX INC·Filed 2006·Granted Mar 8, 2011·4 cites·5 claims
- 2764US7863596B2Ring heater for a phase change memory deviceST MICROELECTRONICS SRL·Filed 2006·Granted Jan 4, 2011·4 cites·25 claims
- 2863US9570163B2Immunity of phase change material to disturb in the amorphous phaseOVONYX MEMORY TECH LLC·Filed 2015·Granted Feb 14, 2017·1 cites·11 claims
- 2963US7407829B2Electrically programmable memory element with improved contactsOVONYX INC·Filed 2004·Granted Aug 5, 2008·9 cites·64 claims
- 3062US7786462B2Chalcogenide devices exhibiting stable operation from the as-fabricated stateOVONYX INC·Filed 2007·Granted Aug 31, 2010·1 cites·9 claims
- 3160US8062921B2Phase change memories with improved programming characteristicsWICKER GUY C·Filed 2009·Granted Nov 22, 2011·1 cites·5 claims
- 3260US7755074B2Low area contact phase-change memoryOVONYX INC·Filed 2007·Granted Jul 13, 2010·1 cites·22 claims
- 3356US8634226B2Immunity of phase change material to disturb in the amorphous phaseGORDON GEORGE·Filed 2011·Granted Jan 21, 2014·1 cites·5 claims
- 3456US7129531B2Programmable resistance memory element with titanium rich adhesion layerOVONYX INC·Filed 2003·Granted Oct 31, 2006·4 cites·29 claims
- 3554US8000125B2Method of programming multi-layer chalcogenide devicesOVONYX INC·Filed 2008·Granted Aug 16, 2011·0 cites·21 claims
- 3653US9251895B2Immunity of phase change material to disturb in the amorphous phaseOVONYX INC·Filed 2014·Granted Feb 2, 2016·0 cites·5 claims
- 3752US9000408B2Memory device with low reset currentKOSTYLEV SERGEY·Filed 2007·Granted Apr 7, 2015·1 cites·27 claims
- 3852US8861293B2Immunity of phase change material to disturb in the amorphous phaseOVONYX INC·Filed 2013·Granted Oct 14, 2014·0 cites·5 claims
- 3950US7767992B2Multi-layer chalcogenide devicesOVONYX INC·Filed 2006·Granted Aug 3, 2010·0 cites·11 claims
- 4049US2007034850A1Chalcogenide devices incorporating chalcogenide materials having reduced germanium or telluruim contentOVONYX INC·Filed 2005·Application pending·0 cites
- 4147US2009057645A1Memory element with improved contactsKOSTYLEV SERGEY A·Filed 2008·Application pending·0 cites
- 4247US2010321991A1Chalcogenide Devices Exhibiting Stable Operation from the As-Fabricated StateKOSTYLEV SERGEY A·Filed 2010·Application pending·0 cites
- 4344US2008023685A1Memory device and method of making sameCZUBATYJ WOLODYMYR·Filed 2007·Application pending·0 cites
- 4443US2009298222A1Method for manufacturing Chalcogenide devicesOVONYX INC·Filed 2008·Application pending·0 cites
- 4542US8581223B2Memory device and method of making sameCZUBATYJ WOLODYMYR·Filed 2011·Granted Nov 12, 2013·0 cites·40 claims
- 4639US2006110846A1Electrically programmable memory element with improved contactsLOWREY TYLER·Filed 2005·Application pending·0 cites
- 4734US2008064198A1Chalcogenide semiconductor memory device with insulating dielectricCZUBATYJ WOLODYMYR·Filed 2006·Application pending·0 cites
- 4832US2010182827A1High Margin Multilevel Phase-Change Memory via Pulse Width ProgrammingKOSTYLEV SERGEY·Filed 2009·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →