Inventor · disambiguated record
Soon-Yong Kweon
Also filed as: KWEON SOON-YONG
16 granted patents·4 pending applications·162 citations·filing 1999–2005
93Inventor score
Top patents by PatentIndex Score
20 records- 0178US7205192B2Semiconductor memory device capable of preventing oxidation of plug and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Apr 17, 2007·23 cites·12 claims
- 0277US6638775B1Method for fabricating semiconductor memory deviceHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Oct 28, 2003·24 cites·15 claims
- 0375US6818935B2Semiconductor device and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 16, 2004·21 cites·24 claims
- 0468US7045071B2Method for fabricating ferroelectric random access memory deviceHYNIX SEMICONDUCTOR INC·Filed 2003·Granted May 16, 2006·11 cites·14 claims
- 0566US6963097B2Ferroelectric random access memory capacitor and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Nov 8, 2005·11 cites·16 claims
- 0662US7371589B2Ferroelectric random access memory capacitor and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted May 13, 2008·2 cites·32 claims
- 0757US6162649AMethod of manufacturing ferroelectric memory deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Dec 19, 2000·20 cites·6 claims
- 0855US6414344B1Semiconductor device for use in a memory cell and method for the manufacture thereofHYUNDAI ELECTRONICS IND CI LTD·Filed 2000·Granted Jul 2, 2002·9 cites·24 claims
- 0954US6812042B2Capacitor and method for fabricating ferroelectric memory device with the sameHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Nov 2, 2004·5 cites·7 claims
- 1054US6744092B2Semiconductor memory device capable of preventing oxidation of plug and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jun 1, 2004·5 cites·8 claims
- 1149US6747302B2FeRAM having BLT ferroelectric layer and method for forming the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Jun 8, 2004·2 cites·18 claims
- 1248US6946340B2Method of fabricating ferroelectric memory device with photoresist and capping layerHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Sep 20, 2005·3 cites·14 claims
- 1347US6391660B2Method for fabricating semiconductor memory device having ferroelectric layerHYUNDAI ELECTRONICS IND·Filed 2001·Granted May 21, 2002·1 cites·11 claims
- 1447US6210979B1Method for fabricating ferroelectric capacitor improving adhesive strength between upper electrode and capping layer without polymer in FRAM deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Apr 3, 2001·13 cites·11 claims
- 1543US6656821B2Fabricating ferroelectric memory device with photoresist and capping layerHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Dec 2, 2003·2 cites·19 claims
- 1639US2005006683A1Capacitor and method for fabricating ferroelectric memory device with the sameHYNIX SEMICONDUCTOR INC·Filed 2004·Application pending·0 cites
- 1738US6379977B1Method of manufacturing ferroelectric memory deviceHYUNDAI ELECTRONICS IND·Filed 1999·Granted Apr 30, 2002·10 cites·13 claims
- 1837US2003047771A1Semiconductor device and method for fabricating the sameFiled 2002·Application pending·0 cites
- 1934US2004266030A1Method for fabricating ferroelectric random access memory device having capacitor with merged top-electrode and plate-line structureFiled 2003·Application pending·0 cites
- 2033US2003124841A1Method for fabricating semiconductor deviceFiled 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →