Inventor · disambiguated record
Dong-Cho Maeng
Also filed as: MAENG DONG-CHO
4 granted patents·2 pending applications·134 citations·filing 1997–2008
75Inventor score
Top patents by PatentIndex Score
6 records- 0192US6541328B2Method of fabricating metal oxide semiconductor transistor with lightly doped impurity regions formed after removing spacers used for defining higher density impurity regionsSAMSUNG ELECTRONICS CO LTD·Filed 2001·Granted Apr 1, 2003·125 cites·25 claims
- 0267US7482684B2Semiconductor device with a dopant region in a lower wireSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 27, 2009·3 cites·5 claims
- 0352US7629239B2Method of fabricating a semiconductor device with a dopant region in a lower wireSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Dec 8, 2009·0 cites·10 claims
- 0447US2008299764A1Interconnection having dual-level or multi-level capping layer and method of forming the sameOH JUN-HWAN·Filed 2008·Application pending·0 cites
- 0545US2007018329A1Interconnection having dual-level or multi-level capping layer and method of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Application pending·0 cites
- 0633US6071373AChemical bath having a uniform etchant overflowSAMSUNG ELECTRONICS CO LTD·Filed 1997·Granted Jun 6, 2000·6 cites·13 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →