Inventor · disambiguated record
Alexander Gschwandtner
Also filed as: GSCHWANDTNER ALEXANDER
10 granted patents·9 pending applications·376 citations·filing 1993–2012
90Inventor score
Files withGSCHWANDTNER ALEXANDER3INFINEON TECHNOLOGIES AG3R3T GMBH RAPID REACTIVE RADICA3SIEMENS AG3ASM INC2
Top patents by PatentIndex Score
19 records- 0193US5281302AMethod for cleaning reaction chambers by plasma etchingSIEMENS AG·Filed 1993·Granted Jan 25, 1994·87 cites·7 claims
- 0289US6232196B1Method of depositing silicon with high step coverageASM INC·Filed 1999·Granted May 15, 2001·138 cites·32 claims
- 0380US5727017AMethod and apparatus for determining emissivity of semiconductor materialAST ELECTRONIK GMBH·Filed 1996·Granted Mar 10, 1998·77 cites·6 claims
- 0473US6706141B1Device to generate excited/ionized particles in a plasmaR3T RAPID REACTIVE RADICALS TE·Filed 2000·Granted Mar 16, 2004·15 cites·16 claims
- 0562US6559005B2Method for fabricating capacitor electrodesINFINEON TECHNOLOGIES AG·Filed 2001·Granted May 6, 2003·10 cites·20 claims
- 0659US5399389AMethod for locally and globally planarizing chemical vapor deposition of SiO2 layers onto structured silicon substratesSIEMENS AG·Filed 1993·Granted Mar 21, 1995·31 cites·15 claims
- 0756US2008003763A1Method of depositing silicon with high step coverageASM INC·Filed 2007·Application pending·0 cites
- 0854US2009269914A1Process for forming a dielectric on a copper-containing metallization and capacitor arrangementINFINEON TECHNOLOGIES AG·Filed 2009·Application pending·0 cites
- 0953US9252011B2Method for forming a layer on a substrate at low temperaturesNIESS JUERGEN·Filed 2012·Granted Feb 2, 2016·1 cites·10 claims
- 1048US5874366AMethod for etching a semiconductor substrate and etching systemSIEMENS AG·Filed 1997·Granted Feb 23, 1999·15 cites·11 claims
- 1148US2006252240A1Process for forming a dielectric on a copper-containing metallization and capacitor arrangementGSCHWANDTNER ALEXANDER·Filed 2006·Application pending·0 cites
- 1243US2010322827A1Method and device for cleaning the waste gases of a processing systemCS CLEAN SYSTEMS AG·Filed 2009·Application pending·0 cites
- 1343US2009122460A1Semiconductor Device and Method for Producing the SameGSCHWANDTNER ALEXANDER·Filed 2007·Application pending·0 cites
- 1442US2003129811A1Method of depositing silicon with high step coverageFiled 2003·Application pending·0 cites
- 1541US7665416B2Apparatus for generating excited and/or ionized particles in a plasma and a method for generating ionized particlesR3T GMBH RAPID REACTIVE RADICA·Filed 2006·Granted Feb 23, 2010·0 cites·28 claims
- 1641US2007227451A1Device for producing excited and/or ionized particles in a plasmaR3T GMBH RAPID REACTIVE RADICA·Filed 2007·Application pending·0 cites
- 1740US6566271B1Method of producing a semiconductor surface covered with fluorineINFINEON TECHNOLOGIES AG·Filed 2000·Granted May 20, 2003·2 cites·8 claims
- 1840US2007031599A1Use of dissolved hafnium alkoxides or zirconium alkoxides as precursors for hafnium oxide and hafnium oxynitride layers or zirconium oxide and zirconium oxynitride layersGSCHWANDTNER ALEXANDER·Filed 2006·Application pending·0 cites
- 1937US2007189918A1Device and method for generating excited and/or ionized particles in a plasmaR3T GMBH RAPID REACTIVE RADICA·Filed 2007·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →