Inventor · disambiguated record
Yasushi Tateshita
Also filed as: TATESHITA YASUSHI
41 granted patents·3 pending applications·139 citations·filing 2006–2023
97Inventor score
Top patents by PatentIndex Score
44 records- 0196US8728852B2Solid-state imaging device, production method thereof, and electronic deviceTATANI KEIJI·Filed 2011·Granted May 20, 2014·18 cites·5 claims
- 0296US8525909B2Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatusMATSUMOTO TAKUJI·Filed 2009·Granted Sep 3, 2013·25 cites·10 claims
- 0393US8953077B2Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatusSONY CORP·Filed 2013·Granted Feb 10, 2015·8 cites·10 claims
- 0493US8049286B2Semiconductor device and semiconductor device manufacturing methodSONY CORP·Filed 2008·Granted Nov 1, 2011·20 cites·9 claims
- 0592US10872919B2Solid-state imaging device and electronic apparatusSONY CORP·Filed 2017·Granted Dec 22, 2020·10 cites·8 claims
- 0691US11791368B2Image pickup element, image pickup apparatus, and method of manufacturing image pickup elementSONY CORP·Filed 2020·Granted Oct 17, 2023·2 cites·5 claims
- 0791US9397136B2Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatusSONY CORP·Filed 2015·Granted Jul 19, 2016·5 cites·26 claims
- 0891US8030708B2Insulated gate field-effect transistorSONY CORP·Filed 2006·Granted Oct 4, 2011·20 cites·3 claims
- 0989US11322534B2Solid-state imaging device and electronic apparatusSONY CORP·Filed 2020·Granted May 3, 2022·2 cites·9 claims
- 1088US8354631B2Solid-state image device manufacturing method thereof, and image capturing apparatus with first and second stress liner filmsSONY CORP·Filed 2010·Granted Jan 15, 2013·9 cites·15 claims
- 1188US2024204102A1Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate processSONY GROUP CORP·Filed 2023·Application pending·0 cites
- 1286US12342615B2Semiconductor device and method of manufacturing the sameSONY GROUP CORP·Filed 2023·Granted Jun 24, 2025·0 cites·8 claims
- 1385US8298011B2Semiconductor device and semiconductor device manufacturing methodTATESHITA YASUSHI·Filed 2011·Granted Oct 30, 2012·7 cites·3 claims
- 1484US9673251B2Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatusSONY CORP·Filed 2016·Granted Jun 6, 2017·2 cites·34 claims
- 1581US11901454B2Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate processSONY GROUP CORP·Filed 2022·Granted Feb 13, 2024·0 cites·32 claims
- 1678US11664376B2Semiconductor device and method of manufacturing the sameSONY GROUP CORP·Filed 2021·Granted May 30, 2023·0 cites·8 claims
- 1777US10998357B2Solid-state imaging device having pixels with high and low sensitivity photoelectric conversion units, and electronic device including the sameSONY CORP·Filed 2017·Granted May 4, 2021·2 cites·10 claims
- 1876US11404573B2Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate processSONY GROUP CORP·Filed 2020·Granted Aug 2, 2022·0 cites·43 claims
- 1976US8361850B2Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate processSONY CORP·Filed 2007·Granted Jan 29, 2013·3 cites·34 claims
- 2074US9502529B2Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate processSONY CORP·Filed 2015·Granted Nov 22, 2016·1 cites·30 claims
- 2174US9165975B2Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatusSONY CORP·Filed 2015·Granted Oct 20, 2015·1 cites·12 claims
- 2274US9070783B2Semiconductor device and method of manufacturing the sameYAMAKAWA SHINYA·Filed 2008·Granted Jun 30, 2015·2 cites·20 claims
- 2372US11011518B2Semiconductor device and method of manufacturing the sameSONY CORP·Filed 2019·Granted May 18, 2021·0 cites·52 claims
- 2471US2014327052A1Solid-state imaging device, production method thereof, and electronic deviceSONY CORP·Filed 2014·Application pending·0 cites
- 2568US10825858B2Image pickup element, image pickup apparatus, and method of manufacturing image pickup elementSONY CORP·Filed 2015·Granted Nov 3, 2020·1 cites·9 claims
- 2668US10559567B2Semiconductor device and method of manufacturing the sameSONY CORP·Filed 2019·Granted Feb 11, 2020·0 cites·31 claims
- 2767US11798962B2Solid-state imaging device with a pixel having a partially shielded photoelectric conversion unit region for holding chargeSONY CORP·Filed 2021·Granted Oct 24, 2023·0 cites·2 claims
- 2867US10868176B2Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate processSONY CORP·Filed 2018·Granted Dec 15, 2020·0 cites·155 claims
- 2966US10319758B2Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatusSONY CORP·Filed 2018·Granted Jun 11, 2019·0 cites·19 claims
- 3066US10128374B2Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate processSONY CORP·Filed 2017·Granted Nov 13, 2018·0 cites·34 claims
- 3165US10269801B2Semiconductor device and method of manufacturing the sameSONY CORP·Filed 2017·Granted Apr 23, 2019·0 cites·23 claims
- 3263US10020334B2Solid-state imaging device, method for manufacturing solid-state imaging device, and imaging apparatusSONY CORP·Filed 2017·Granted Jul 10, 2018·0 cites·19 claims
- 3363US9865733B2Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate processSONY CORP·Filed 2016·Granted Jan 9, 2018·0 cites·14 claims
- 3463US9673326B2Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate processSONY CORP·Filed 2016·Granted Jun 6, 2017·0 cites·27 claims
- 3563US9647026B2Solid-state image pickup device, method of manufacturing the same, and electronic apparatusSONY CORP·Filed 2014·Granted May 9, 2017·1 cites·8 claims
- 3663US2009256226A1Solid-state imaging device, production method thereof, and electronic deviceSONY CORP·Filed 2009·Application pending·0 cites
- 3762US9881920B2Semiconductor device and method of manufacturing the sameSONY CORP·Filed 2016·Granted Jan 30, 2018·0 cites·30 claims
- 3860USRE50457ESemiconductor device and semiconductor device manufacturing methodSONY GROUP CORP·Filed 2018·Granted Jun 10, 2025·0 cites·20 claims
- 3960US9419096B2Metal oxide semiconductor having epitaxial source drain regions and a method of manufacturing same using dummy gate processSONY CORP·Filed 2014·Granted Aug 16, 2016·0 cites·22 claims
- 4059US9449974B2Semiconductor device and method of manufacturing the sameSONY CORP·Filed 2015·Granted Sep 20, 2016·0 cites·17 claims
- 4155US10438983B2Solid-state imaging device, production method thereof, and electronic deviceSONY CORP·Filed 2016·Granted Oct 8, 2019·0 cites·11 claims
- 4255US9041058B2Metal oxide semiconductor having epitaxial source drain regions and method of manufacturing same using dummy gate processTATESHITA YASUSHI·Filed 2012·Granted May 26, 2015·0 cites·12 claims
- 4354US8969988B2Solid-state imaging device, method of manufacturing solid-state imaging device, and electronic deviceSONY CORP·Filed 2013·Granted Mar 3, 2015·0 cites·19 claims
- 4451US8614412B2Solid-state image device, manufacturing method thereof, and image capturing apparatusSONY CORP·Filed 2012·Granted Dec 24, 2013·0 cites·10 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →