Inventor · disambiguated record
Max Hineman
Also filed as: HINEMAN MAX · HINEMAN MAX F
48 granted patents·8 pending applications·1,058 citations·filing 1995–2020
98Inventor score
Top patents by PatentIndex Score
56 records- 0198US6350679B1Methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitryMICRON TECHNOLOGY INC·Filed 1999·Granted Feb 26, 2002·336 cites·27 claims
- 0297US6372657B1Method for selective etching of oxidesMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 16, 2002·188 cites·25 claims
- 0397US6358756B1Self-aligned, magnetoresistive random-access memory (MRAM) structure utilizing a spacer containment schemeMICRON TECHNOLOGY INC·Filed 2001·Granted Mar 19, 2002·163 cites·35 claims
- 0495US9299747B1Electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniquesINTEL CORP·Filed 2014·Granted Mar 29, 2016·19 cites·16 claims
- 0595US6486108B1Cleaning composition useful in semiconductor integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 26, 2002·41 cites·9 claims
- 0694US11195575B1Memory array with shorting structure on a dummy array thereof, and method of providing sameINTEL CORP·Filed 2020·Granted Dec 7, 2021·5 cites·19 claims
- 0794US6521931B2Self-aligned, magnetoresitive random-access memory (MRAM) structure utilizing a spacer containment schemeMICRON TECHNOLOGY INC·Filed 2002·Granted Feb 18, 2003·47 cites·34 claims
- 0889US9559146B2Phase-change memory cell implant for dummy array leakage reductionINTEL CORP·Filed 2014·Granted Jan 31, 2017·6 cites·12 claims
- 0987US9608042B2Electrode configurations to increase electro-thermal isolation of phase-change memory elements and associated techniquesINTEL CORP·Filed 2016·Granted Mar 28, 2017·5 cites·20 claims
- 1086US9231202B2Thermal-disturb mitigation in dual-deck cross-point memoriesINTEL CORP·Filed 2013·Granted Jan 5, 2016·5 cites·24 claims
- 1185US6783995B2Protective layers for MRAM devicesMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 31, 2004·40 cites·21 claims
- 1279US7344975B2Method to reduce charge buildup during high aspect ratio contact etchMICRON TECHNOLOGY INC·Filed 2005·Granted Mar 18, 2008·5 cites·41 claims
- 1379US7211849B2Protective layers for MRAM devicesMICRON TECHNOLOGY INC·Filed 2004·Granted May 1, 2007·16 cites·23 claims
- 1478US6136767ADilute composition cleaning methodMICRON TECHNOLOGY INC·Filed 1998·Granted Oct 24, 2000·44 cites·38 claims
- 1577US9837604B2Phase-change memory cell implant for dummy array leakage reductionINTEL CORP·Filed 2017·Granted Dec 5, 2017·2 cites·8 claims
- 1677US6596647B2Dilute cleaning composition and method for using the sameMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 22, 2003·14 cites·27 claims
- 1773US8673787B2Method to reduce charge buildup during high aspect ratio contact etchSANDHU GURTEJ S·Filed 2011·Granted Mar 18, 2014·2 cites·18 claims
- 1873US7135444B2Cleaning composition useful in semiconductor integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 14, 2006·6 cites·22 claims
- 1969US9082714B2Use of etch process post wordline definition to improve data retention in a flash memory deviceKOVAL RANDY J·Filed 2011·Granted Jul 14, 2015·3 cites·5 claims
- 2069US7985692B2Method to reduce charge buildup during high aspect ratio contact etchMICRON TECHNOLOGY INC·Filed 2008·Granted Jul 26, 2011·2 cites·24 claims
- 2168US7659210B2Nano-crystal etch processMICRON TECHNOLOGY INC·Filed 2007·Granted Feb 9, 2010·2 cites·20 claims
- 2267US5689334AIntracavity laser spectroscope for high sensitivity detection of contaminantsINNOVATIVE LASERS CORP·Filed 1995·Granted Nov 18, 1997·34 cites·7 claims
- 2364US6638843B1Method for forming a silicide gate stack for use in a self-aligned contact etchMICRON TECHNOLOGY INC·Filed 2000·Granted Oct 28, 2003·9 cites·34 claims
- 2463US7087561B2Cleaning composition useful in semiconductor integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2002·Granted Aug 8, 2006·2 cites·41 claims
- 2561US6797628B2Methods of forming integrated circuitry, semiconductor processing methods, and processing method of forming MRAM circuitryMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 28, 2004·6 cites·65 claims
- 2660US7067466B2Cleaning composition useful in semiconductor integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 27, 2006·1 cites·84 claims
- 2760US6547979B1Methods of enhancing selectivity of etching silicon dioxide relative to one or more organic substances; and plasma reaction chambersMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 15, 2003·4 cites·35 claims
- 2859US6844255B2Methods of providing an interlevel dielectric layer intermediate different elevation conductive metal layers in the fabrication of integrated circuitryMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 18, 2005·7 cites·32 claims
- 2958US8809198B2Nano-crystal etch processALAPATI RAMAKANTH·Filed 2009·Granted Aug 19, 2014·0 cites·25 claims
- 3055US2007113975A1Plasma reaction chamber assembliesHINEMAN MAX F·Filed 2007·Application pending·0 cites
- 3154US8568900B2Methods for forming an enriched metal oxide surfaceRUSSELL STEPHEN W·Filed 2008·Granted Oct 29, 2013·0 cites·10 claims
- 3254US7319071B2Methods for forming a metallic damascene structureMICRON TECHNOLOGY INC·Filed 2004·Granted Jan 15, 2008·5 cites·25 claims
- 3354US7166543B2Methods for forming an enriched metal oxide surface for use in a semiconductor deviceMICRON TECHNOLOGY INC·Filed 2004·Granted Jan 23, 2007·3 cites·55 claims
- 3454US7131391B2Plasma reaction chamber liner comprising rutheniumMICRON TECHNOLOGY INC·Filed 2002·Granted Nov 7, 2006·2 cites·9 claims
- 3553US12268011B2Pillar select transistor for 3-dimensional cross point memoryINTEL CORP·Filed 2020·Granted Apr 1, 2025·0 cites·20 claims
- 3653US7396774B2Methods for forming an enriched metal oxide surfaceMICRON TECHNOLOGY INC·Filed 2006·Granted Jul 8, 2008·0 cites·35 claims
- 3751US7255803B2Method of forming contact openingsMICRON TECHNOLOGY INC·Filed 2006·Granted Aug 14, 2007·0 cites·15 claims
- 3851US7067465B2Cleaning composition useful in semiconductor integrated circuit fabricatingMICRON TECHNOLOGY INC·Filed 2002·Granted Jun 27, 2006·0 cites·29 claims
- 3951US6831047B2Cleaning composition useful in semiconductor integrated circuit fabricationMICRON TECHNOLOGY INC·Filed 2002·Granted Dec 14, 2004·0 cites·28 claims
- 4048US6379872B1Etching of anti-reflective coatingsMICRON TECHNOLOGY INC·Filed 1998·Granted Apr 30, 2002·16 cites·41 claims
- 4148US2022190035A1Deck select transistor for three-dimensional cross point memoryINTEL CORP·Filed 2020·Application pending·0 cites
- 4247US2007007657A1Methods for forming conductive vias in a substrate and electronic devices and systems including an at least partially reversed oxidation injury at an interface between a conductive via and a conductive interconnect structureHINEMAN MAX F·Filed 2006·Application pending·0 cites
- 4347US2006128159A1Method of removing etch residuesHILLYER LARRY·Filed 2006·Application pending·0 cites
- 4446US7293526B2Plasma reaction chamber liner consisting essentially of osmiumMICRON TECHNOLOGY INC·Filed 2004·Granted Nov 13, 2007·0 cites·9 claims
- 4543US7615164B2Plasma etching methods and contact opening forming methodsMICRON TECHNOLOGY INC·Filed 2004·Granted Nov 10, 2009·0 cites·12 claims
- 4643US7118683B2Methods of etching silicon-oxide-containing compositionsMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 10, 2006·0 cites·10 claims
- 4743US7067429B2Processing method of forming MRAM circuitryMICRON TECHNOLOGY INC·Filed 2003·Granted Jun 27, 2006·0 cites·25 claims
- 4843US6953531B2Methods of etching silicon-oxide-containing materialsMICRON TECHNOLOGY INC·Filed 2002·Granted Oct 11, 2005·0 cites·16 claims
- 4942US6841525B2Dilute cleaning composition and method for using sameMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 11, 2005·0 cites·7 claims
- 5040US6384001B2Dilute cleaning compositionMICRON TECHNOLOGY INC·Filed 1997·Granted May 7, 2002·6 cites·5 claims
Showing the top 50 of 56 patent records by PatentIndex Score.
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