Inventor · disambiguated record
Cedric Ouvrard
Also filed as: OUVRARD CEDRIC · OUVRARD CÉDRIC
27 granted patents·4 pending applications·37 citations·filing 2012–2022
93Inventor score
Top patents by PatentIndex Score
31 records- 0195US9680004B2Power MOSFET with seperate gate and field plate trenchesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jun 13, 2017·12 cites·15 claims
- 0294US11158735B2Charge compensation MOSFET with graded epi profile and methods of manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Oct 26, 2021·3 cites·18 claims
- 0388US11462620B2Semiconductor device having a transistor cell region and a termination region with needle-shaped field plate structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Oct 4, 2022·1 cites·20 claims
- 0486US10510846B2Semiconductor device with needle-shaped field plate structures in a transistor cell region and in an inner termination regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Dec 17, 2019·3 cites·26 claims
- 0585US10269953B2Semiconductor device having a trench gateINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Apr 23, 2019·3 cites·22 claims
- 0682US9209318B2Vertical JFET with body diode and device regions disposed in a single compound epitaxial layerINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Dec 8, 2015·4 cites·5 claims
- 0779US10872957B2Semiconductor device with needle-shaped field plate structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 22, 2020·1 cites·20 claims
- 0878US2022376062A1Semiconductor device having needle-shaped first field plate structures and needle-shaped second field plate structuresINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2022·Application pending·0 cites
- 0974US10629595B2Power semiconductor device having different gate crossings, and method for manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Apr 21, 2020·2 cites·14 claims
- 1072US10727331B2Semiconductor device having a reduced surface doping in an edge termination area, and method for manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jul 28, 2020·1 cites·12 claims
- 1172US9029974B2Semiconductor device, junction field effect transistor and vertical field effect transistorINFINEON TECHNOLOGIES AG·Filed 2013·Granted May 12, 2015·3 cites·17 claims
- 1270US9865726B2Method of manufacturing a semiconductor device with trench gate by using a screen oxide layerINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Jan 9, 2018·1 cites·14 claims
- 1369US10050113B2Semiconductor device with needle-shaped field plates and a gate structure with edge and node portionsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Aug 14, 2018·1 cites·21 claims
- 1468US9755066B2Reduced gate charge field-effect transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Sep 5, 2017·1 cites·14 claims
- 1565US11848379B2MOSFET having a drift region with a graded doping profile and methods of manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Dec 19, 2023·0 cites·21 claims
- 1664US9711660B2JFET and method of manufacturing thereofINFINEON TECHNOLOGIES AG·Filed 2014·Granted Jul 18, 2017·1 cites·14 claims
- 1759US10868173B2Semiconductor device having an edge termination area with trench electrodes at different electric potentials, and method for manufacturing thereofINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Dec 15, 2020·0 cites·25 claims
- 1855US10205015B2Reduced gate charge field-effect transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Feb 12, 2019·0 cites·19 claims
- 1953US11764272B2Semiconductor device and method of manufacturing the sameINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2021·Granted Sep 19, 2023·0 cites·14 claims
- 2053US10453929B2Methods of manufacturing a power MOSFETINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Oct 22, 2019·0 cites·16 claims
- 2153US9666696B2Method of manufacturing a vertical junction field effect transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted May 30, 2017·0 cites·12 claims
- 2250US11296218B2Semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Apr 5, 2022·0 cites·20 claims
- 2350US10811531B2Transistor device with gate resistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Oct 20, 2020·0 cites·16 claims
- 2446US9276135B2Junction field effect transistor with vertical PN junctionINFINEON TECHNOLOGIES AG·Filed 2013·Granted Mar 1, 2016·0 cites·20 claims
- 2545US8946787B2Reduced charge transistorINFINEON TECHNOLOGIES AUSTRIA·Filed 2012·Granted Feb 3, 2015·0 cites·26 claims
- 2644US10573731B2Semiconductor transistor and method for forming the semiconductor transistorINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Feb 25, 2020·0 cites·15 claims
- 2742US9799738B2Semiconductor device with field electrode and contact structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Oct 24, 2017·0 cites·16 claims
- 2841US10879363B2Needle cell trench MOSFETINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Dec 29, 2020·0 cites·20 claims
- 2941US2023055891A1Transistor Device and Method of Fabricating a Transistor DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Application pending·0 cites
- 3037US2017154965A1Semiconductor DeviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Application pending·0 cites
- 3135US2017077227A1Needle Field Plate MOSFET with Mesa Contacts and Conductive PostsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →