Inventor · disambiguated record
Kuniaki Yagi
Also filed as: YAGI KUNIAKI
14 granted patents·4 pending applications·160 citations·filing 2000–2022
92Inventor score
Top patents by PatentIndex Score
18 records- 0193US10934634B2Polycrystalline SiC substrate and method for manufacturing sameSICOXS CORP·Filed 2017·Granted Mar 2, 2021·15 cites·6 claims
- 0290US6703288B2Compound crystal and method of manufacturing sameHOYA CORP·Filed 2002·Granted Mar 9, 2004·29 cites·2 claims
- 0388US6736894B2Method of manufacturing compound single crystalHOYA CORP·Filed 2002·Granted May 18, 2004·29 cites·7 claims
- 0487US6416578B1Silicon carbide film and method for manufacturing the sameHOYA CORP·Filed 2000·Granted Jul 9, 2002·31 cites·9 claims
- 0578US6596080B2Silicon carbide and method for producing the sameHOYA CORP·Filed 2001·Granted Jul 22, 2003·14 cites·14 claims
- 0676US6475456B2Silicon carbide film and method for manufacturing the sameHOYA CORP·Filed 2001·Granted Nov 5, 2002·14 cites·8 claims
- 0775US6821340B2Method of manufacturing silicon carbide, silicon carbide, composite material, and semiconductor elementHOYA CORP·Filed 2001·Granted Nov 23, 2004·12 cites·14 claims
- 0871US7101774B2Method of manufacturing compound single crystalHOYA CORP·Filed 2002·Granted Sep 5, 2006·8 cites·7 claims
- 0968US9761479B2Manufacturing method for semiconductor substrateTOYOTA JIDOSHOKKI KK·Filed 2014·Granted Sep 12, 2017·2 cites·16 claims
- 1068US8890170B2Silicon carbide substrate, semiconductor device and method for manufacturing silicon carbide substrateNAGASAWA HIROYUKI·Filed 2011·Granted Nov 18, 2014·2 cites·9 claims
- 1163US9773678B2Semiconductor substrate and method for manufacturing semiconductor substrateTOYOTA JIDOSHOKKI KK·Filed 2015·Granted Sep 26, 2017·1 cites·19 claims
- 1263US8133321B2Process for producing silicon carbide single crystalKAWAHARA TAKAMITSU·Filed 2006·Granted Mar 13, 2012·1 cites·16 claims
- 1356US7211337B2Compound crystal and method of manufacturing sameHOYA CORP·Filed 2003·Granted May 1, 2007·2 cites·13 claims
- 1452US2024429047A1Method for producing polycrystalline silicon carbide substrateSICOXS CORP·Filed 2022·Application pending·0 cites
- 1545US11264241B2Semiconductor substrate, semiconductor element and method for producing semiconductor substrateTAMURA SEISAKUSHO KK·Filed 2018·Granted Mar 1, 2022·0 cites·7 claims
- 1644US2011089431A1Compound single crystal and method for producing the sameHOYA CORP·Filed 2010·Application pending·0 cites
- 1737US2002096104A1Single crystal SiCand method of producing the same as well as SiC semiconductor device and SiC composite materialHOYA CORP·Filed 2002·Application pending·0 cites
- 1837US2003056718A1Method of manufacturing single crystal substrateHOYA CORP·Filed 2002·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →