Inventor · disambiguated record
Anquan Jiang
Also filed as: JIANG ANQUAN
8 granted patents·9 citations·filing 2011–2020
77Inventor score
Top patents by PatentIndex Score
8 records- 0177US9685216B2Non-destructive readout ferroelectric memory as well as method of preparing the same and method of operating the sameUNIV FUDAN·Filed 2015·Granted Jun 20, 2017·4 cites·31 claims
- 0262US10403348B2Large current-readout ferroelectric single-crystal thin film memory as well as method of preparing the same and method of operating the sameUNIV FUDAN·Filed 2016·Granted Sep 3, 2019·2 cites·37 claims
- 0360US8687401B2Ferro-resistive random access memory (Ferro-RRAM), operation method and manufacturing method thereofJIANG ANQUAN·Filed 2011·Granted Apr 1, 2014·2 cites·13 claims
- 0455US10971204B2Three-dimensional non-volatile ferroelectric memoryUNIV FUDAN·Filed 2018·Granted Apr 6, 2021·1 cites·14 claims
- 0543USRE49620ELarge current-readout ferroelectric single-crystal thin film memory as well as method of preparing the same and method of operating the sameUNIV FUDAN·Filed 2016·Granted Aug 22, 2023·0 cites·37 claims
- 0642US9354192B2Ferroelectric analyzing device and method for adjusting ferroelectric domain switching speedJIANG ANQUAN·Filed 2011·Granted May 31, 2016·0 cites·15 claims
- 0738US11348943B2Non-volatile ferroelectric memory and method of preparing the sameUNIV FUDAN·Filed 2020·Granted May 31, 2022·0 cites·16 claims
- 0832US11145664B2Ferroelectric memory IC as well as method of operating the same and method of preparing the sameUNIV FUDAN·Filed 2018·Granted Oct 12, 2021·0 cites·23 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →